• Current Photovoltaic Research
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• v.10 no.1
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• pp.28-32
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• 2022

We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t₀)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t₀ = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R_□ = 7.24 Ω/□.

• Proceedings of the KIEE Conference
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• 2003.10b
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• pp.255-258
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• 2003

Photovoltaic(PV) array, which is generally installed outside, has the possibility to be damaged by high voltage due to lightning. Because the electrical characteristics of PV array have not been fully identified by lightning yet, there is a very important issue whether PV array should be connected with ground or not. In this paper, a basic model of PV array is provided considering the PV cell's barrier capacitance and ground capacitance for analysis of electrical characteristics by lightning using PSCAD/EMTDC.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.720-725
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.113-116
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• 2004

Output power of a photovoltaic system changes continuously as it strongly depends on the weather condition(isolation and temperature). Therefore, it is necessary the theoretical model realizes the electrical output characteristics of solar cell. Of several theoretical models for real solar cell, both parametric model and interpolation model are used widely. In this paper, we have propose a improved model of solar cell using its output characteristics that can be extended to calculate the rear solar cell characteristics at various temperatures and insolation. And more, the theoretical research of several models of solar cell using simulation analysis.

• 한국태양에너지학회:학술대회논문집
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• 2008.11a
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• pp.42-47
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• 2008

In this paper, we analyze the electrical characteristics of PV depending on distance among solar cells before and after lamination process. From the result, the PV module's maximum power increases about 3.37% when solar cells's distance is 10mm. And the maximum power increases up to 8.42% when solar cells's maximum distance is 50mm. It is assumed that PV module's surface temperature decreases because of increasing distance between solar cells that would give high power generation. Also, short distance between solar cell and frame result in contamination on glass. When considering reduced maximum power caused by contaminant, from that. we can fabricated PV module of lower cost with high performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.210-224
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• 2006

A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• Proceedings of the KIEE Conference
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• 2004.04a
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• pp.208-211
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• 2004

Photovoltaic(PV) array, which is generally installed outside, has the possibility to be damaged by high voltage due to lightning. Because the electrical characteristics of PV array have not been fully identified by lightning yet, there is a very important issue whether PV array should be connected with ground or not. In this paper, a basic model of PV array is provided considering the PV cell's barrier capacitance and ground capacitance for analysis of electrical characteristics by lightning using PSCAD/EMTDC.

• Proceedings of the KIPE Conference
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• 2003.11a
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• pp.81-84
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• 2003

For increasing power of photovoltaic systems, serial and parallel connection needed. In parallel connection, a desirable characteristic of parallel-connected supply system is that individual converters share the load current equally and stably. The current sharing(CS) can be implemented using two approaches. The first one, known as a Droop method, and the other is Active current-sharing. In Droop method, current distribution characteristics relies on the high output impedance of each converter. This scheme is more simple and no need interconnections. but also has a disadvantages of degrading current sharing characteristics. In this paper, using droop method at multiful-parallel connection with it's convenience and simplicity.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.373-374
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• 2015

This paper proposes a dynamic thermo-electric model that links electrical parameters with thermal parameters. In this model, the irradiance and ambient temperature are used to calculate the cell temperature based on a four-layer model that includes the PV cell and surround materials. The calculated cell temperature is then used in the electrical model to accurately adjust the PV electrical characteristics. Dynamic PV characteristics, parallel capacitive and series inductive components, are added to the conventional single-diode model. The results show the effectiveness of this model rather than other conventional models of a PV panel.