• Macromolecular Research
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• v.14 no.3
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• pp.300-305
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• 2006

The chemical structure of a semi-aromatic polyimide-I, which was prepared by the chemical imidization of cyclopentanetetracarboxylic dianhydride and 2,2-bis(4-aminophenyl)hexafluoropropane, was characterized by $^{13}C-NMR$ spectroscopy. The chemically imidized polyimide-I was used for the preparation of a photosensitive polyimide (PSPI) through the addition of benzophenone and benzophenone oxime hexamethylene diurethane (BOHD), a photobase generator containing oxime-urethane groups. The polyimide-I film containing benzophenone and BOHD was not soluble in 2.38 wt% tetrabutylammonium hydroxide solution in $H_2O$. However, it became soluble following irradiation with 310 nm UV light. A positive tone image with a resolution of $5{\mu}m$ was obtained with this PSPI, having sensitivity($D_c$) of $1.2J/cm^2$ and contrast(${\gamma}_p$) of 1.08. Thus, a polyimide, which is not intrinsically photosensitive, can become photosensitive through the addition of a photobase generator containing oxime-urethane groups as a photosensitive compound.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1364-1369
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• 2015

As the wire bonding process has been converted into BUMP process due to the high density integration of semiconductor chip, the telecommunication line connecting to semiconductor chip and external devices have become finer. As a result, a more precise work is necessary. However, it is difficult to control quantity given the nature of high viscosity of PSPI and the yield rate continues to decline due to the inflow of bubble. Therefore, this paper developed the D&P(degassing and pumping) system to remove and supply gas that is generated from coating the high viscosity photosensitive polyimide(PSPI) in the semiconductor BUMP process.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.885-888
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• 2004

We have prepared and investigated the properties of photoinitiator-free photosensitive polyimide gate insulatos for organic thin-film transistors (OTFTs). The precursor was prepared from a dianhydride, 3,3',4,4'-Benzophenone tetracarboxylic dianhydride (BTDA) and novel aromatic diamine, 7-(3,5-diaminobenzoyloxy) coumarine (DA-CM). Photo-patternability of the polyimide precursor film and surface morphology of the films before and after photo-patterning process were investigated and negative pattern with a resolution of 50 ${\mu}m$ was obtained nicely. In addition, we have fabricated OTFTs with pentacene and photosensitive polyimide as a semiconductor and a gate insulator; respectively. According to the device geometry, the ${\mu}$, current modulation ratio and subthreshold swing of the devices were around 0.2${\sim}$0.4 $cm^2$/Vs, more than $10^5$ and around 3${\sim}$5 V/dec, respectively.

• Applied Chemistry for Engineering
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• v.17 no.2
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• pp.217-222
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• 2006

Polyimides have been investigated extensively and used widely over the past three decades because of their high performance properties such as excellent thermal, mechanical, and electrical properties. Polyimides are difficult to be processed because of the aromatic moieties, imide group, and insoluble nature in most organic solvents. The soluble polyimides were synthesized from 2,2,-bis(3-amino-4-hydroxyphenyl) hexafluoropropane (BAPAF) and 3,3,-diamino-4,4-dihydroxybyphenyl (HAB) as aromatic diamines and 4,4-(hexafluoroisopropylidene)diphthalic dianhydride (6FDA), pyromellitic dianhydride (PMDA), 4,4-oxydiphthalic dianhydride (OPDA), 3,3,4,4-benzophenone tetracarboxylic dianhydride (BTDA) and 3,3,4,4-diphenylsulfone tetracarboxylic dianhydride (DSDA) as aromatic dianhydrides. The polyimides were characterized by NMR, FR-IR, TGA and the dielectric constant of the obtained polyimides was calculated from storage of electro-capacity. A novel photosensitive polyimide was synthesized by the reaction of polyimide, containing hydroxyl group and methacryloyl chloride using triethylamine. The good micro-pattern was obtained with photosensitive polyimide from the photolithographic technique.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.139-141
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• 2007

Thin films of polyimide (Pl) were fabricated by a vapor deposition polymerization method (VDPM) and studied for the photosensitive characteristic. Polyamic acid (PAA) thin films fabricated by vapor deposition polymerization (VDP) from 6FDA and 4-4' DDE were converted to PI thin films by thermal curing. From AFM and Ellipsometer experimental, the films thickness was decreased and the reflectance was increased as the curing temperature was increased. Those results implies that thin film is uniform. From UV-Vis spectra, PI thin films showed high absorbance in 225 $\sim$ 260 [nm] region.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.39-47
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• 2003

Cr thin films were deposited on photosensitive polyimide substrates by RF bias sputtering and DC sputtering and the interfaces between Cr thin film and polyimide were observed using TEM. When the polyimide surface was in-situ RF plasma cleaned at the RF power density of 0.13-2.12 $W/cm^2$, increasing of RF power density changed the morphology of polyimide surfaces from round dig to sharp shape, and surface roughness increased by anisotropic etching. The intermixed layer-like interfaces between Cr and polyimide were observed in the RF bias sputtered specimens. This interface seems to be formed due to the RF cleaning effect; the polyimide surface was RF plasma cleaned while RF power was increased to the setting point before Cr deposition.

• Proceedings of the Korean Society of Potoscience Conference
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• 2006.06a
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• pp.38-38
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• 2006

• Bulletin of the Korean Chemical Society
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• v.18 no.2
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• pp.243-245
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• 1997

• Polymer(Korea)
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• v.26 no.5
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• pp.634-643
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• 2002

Ultrathin film of polyamic acid having benzene and sulfonyloxyimide moieties was prepared using the Langmuir-Blodgett (LB) technique, and then photosensitive polyimide LB film was obtained by the thermal treatment of precursor polyamic acid multilayers at 200$\^{C}$ for 1 hr. The polyamic acid was synthesized by condensation polymerization under THF and pyridine cosolvent. All monomers and polymers were identified through elemental analysis, FT-IR and $^1$H-NMR spectroscopic measurements. The microarray patterning of photosensitive polyimide LB film on a gold substrate was generated with a deep UV lithography technique. The well-characterized monolayer of cytochrome c was immobilized on the microarray patterns using two different self-assembly processes. Physical and electrochemical properties of the self-assembled cytochrome c monolayer were investigated based on cyclic voltammetry and atomic force microscopy (AFM). Also, its application in bioelectronic device was examined.

• Polymer(Korea)
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• v.24 no.3
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• pp.407-417
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• 2000

Photosensitive polyimides having cyclobutane or phenyl and aromatic sulfonyloxyimide units in the main chain have been synthesized and the photodegradation behavior was investigated in relation with the polymer structure. The polyimides were prepared by condensation polymerization of N-hydroxyl and sulfonyl chloride. The prepared polyimides were stable up to 25$0^{\circ}C$ without thermal degradation. It has been found that the photodegradation of polyimides upon irradiation of 254 nm UV light results from scission of N-O bonds or ring opening of imides moiety by spectroscopic measurements. The polyimides were useful as positive working photodegradable polymers. Especially, the positive tone image of polyimide containing a pyromellitic diimide moiety exhibited high sensitivity and resolution.