• 한국전기전자재료학회논문지
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• 제15권5호
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• pp.435-440
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• 2002

In this study, we have investigated photo-induced changes of optical energy gap( $E_{OP)}$ and photoluminescence (PL) in amorphous ($\alpha$-) S $e_{100-x}$G $e_{x}$ (x=5, 25 and 33) thin films prepared by conventional thermal evaporation method. In the $\alpha$-S $e_{100-x}$G $e_{x}$ thin film, the $E_{OP}$ is obtained by a linear extrapolation of the ($\alpha$hν)$^{\frac{1}{2}}$ versus hν plot to the energy axis using the optical absorption coefficient ($\alpha$) calculated from the extinction coefficient k measured in the wavelength range of 290~900nm. Although the values of $\Delta$ $E_{OP}$ are very different, all films exhibit photo-induced photo-darkening (PD) effect that is a red shift of $E_{OP}$ . In particular, $\Delta$ $E_{OP}$ in $\alpha$-S $e_{75}$ G $e_{25}$ thin film exhibits the largest value (i, e., $\Delta$ $E^{OP}$ ~40meV for $\alpha$-S $e_{95}$ G $e_{5}$ , $\Delta$ $E_{OP}$ ~200meV for $\alpha$-S $e_{75}$ G $e_{25}$ , $\Delta$ $E_{OP}$ ~130meV for $\alpha$-S $e_{67}$ G $e_{33}$ ). PL spectra in $\alpha$-SeGe by hν$_{HeCd}$ have no-Stokes shift (SS) and show a tendency dependent on both composition and illumination time. We explain the energy-induced phenomena such as the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..the PD and thermal bleaching, the native charged-defect generation and the no-SS PL, etc..tc..

• 한국세라믹학회지
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• 제34권5호
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• pp.467-472
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• 1997

Porous silicon was prepared by an anodic etching. The pore size was about 10 nm at an etching time of 20 sec and a current density of 20 mA/$\textrm{cm}^2$. The porous layer was composed of an micro-porous layer (0.6 ${\mu}{\textrm}{m}$) and a macro-porous layer (10 ${\mu}{\textrm}{m}$). Room temperature PL with maximum peak 6700$\AA$ appeared. The peak disappeared by an oxidation reaction when the porous silicon was heated to 100~20$0^{\circ}C$ in atmosphere. In order to avoid the oxidation a heat treatment was done in H2 atmosphere. The micro-pore and Si column, which formed quantum well, were collapsed by the high temperature. The PL maximum peak of heated sample was gradually red-shifted and showed about 300$\AA$ red-shift at 50$0^{\circ}C$. The intensity of PL was maintained to high temperatures in lower pressures. The porous Si was carbonized in C2H2+H2 gas in order to increase thermal stability. The carbonization of the porous Si prevented red-shift of the maximum PL peak caused by sintering effect at high temperatures, and the carbonized porous Si showed Pl signal at higher temperatures by above 20$0^{\circ}C$ than the sample in H2 atmosphere.

• Bulletin of the Korean Chemical Society
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• 제25권4호
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• pp.525-528
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• 2004

The photoluminescence (PL) emission of Si nanocrystals synthesized by 400 keV Si ion implanted in $SiO_2$ is studied as a function of ion dose and annealing time. The formation of nanocrystals at around 600 nm from the surface was confirmed by RBS and HRTEM, and the Si nanocrystals showed a wide and very intense PL emission at 700-900 nm. The intensity of this emission showed a typical behaviour with a fast transitory increase to reach a saturation with the annealing time, however, the red shift increased continuously because of the Ostwald ripening. The oversaturation of dose derived a decrease of PL intensity because of the diminishment of quantum confinement. A strong enhancement of PL intensity by H passivation was confirmed also, and the possible mechanism is discussed.

• 한국결정성장학회지
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• 제13권1호
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• pp.31-35
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• 2003

PL data에 의해 다이아몬드가 HPHT(고온고압)으로 처리하는 과정을 거치면서 격자 내에 불순물 원자뿐만 아니라 공공과 침입형 원자의 움직임과 감소, 소멸, 생성 등으로 일부 격자가 재배열됨이 드러났다. 특히, PL spectrum은 Type IIa 다이아몬드가 가지는 매우 작은 양의 질소 불순물도 명확히 나타났으며, 이로 인해 상당한 수의 점결함이 결정 격자 내에 분산되어 있음을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.195-197
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• 2002

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. Photoluminescence(PL) spectra of the synthesized CdTe QDs revealed the intensity of PL peaks was stronger as the condensation time was longer. This result was thought because annealing effect by thermal energy transferred during condensation eliminated defects which act as traps and recombination centers in CdTe particle. PL intensity has stron dependence of Te precursor concentration. It confirmed the ratio of Te ion to Cd ion added during synthesis affected the particle size and size distribution of the CdTe QDs. Finally, the synthesized CdTe QDs were identified to be cubic structured CdTe quantum dots by X-ray diffraction(XRD).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2008년도 추계학술대회 초록집
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• pp.9-10
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• 2008

Triple layers structure of $SiO_2$/ZnS:Mn/ZnS was synthesized by using ion substitution and chemical precipitation method. Each layer thickness was controlled by adjusting the concentration of manganese (II) acetate ($Mn(CH_3COO)_2$) and tetraethyl orthosilicate (TEOS). The structure and morphology of prepared phosphors were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electron probe microscopic analyzer (EPMA). Photoluminescence (PL) properties of ZnS with different layer thickness and amount of Mn activator were analyzed by PL spectrometer. PL emission intensity and PL stability were analyzed for evaluating effects of Mn activator.

• 한국진공학회지
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• 제17권2호
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• pp.170-174
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• 2008

고립된 탄소나노튜브를 얻기 위해 계면활성제 Sodium Dodecyl Sulfate(SDS) 수용액에 단층 탄소나노튜브 분말을 넣어 초음파 처리를 하는 과정 중에 발생하는 물성 변화를 라만과 Photoluminescence를 통하여 연구하였다. 단층 탄소나노튜브(SWCNT) radial breathing mode(RBM)의 라만신호 세기의 변화는 SWCNT의 chirality에 따라 서로 다른 경향성을 보이고 초음파 처리 시간에 영향을 받음을 확인하였다. 또한 동일한 농도의 계면활성제에 담긴 SWCNT의 농도가 커지면 G-band 라만 진동수가 작아지면서 Photoluminescence 세기가 증가하는 현상을 관측하였다.

• 한국광물학회지
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• 제22권2호
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• pp.81-86
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• 2009

변색 효과를 보이는 6종의 보석들을 대상으로 UV-Vis 분광분석과 Photoluminescence에 의한 발광 및 형광 특성을 조사하였다. 514 nm Ar이온 source로 PL을 측정한 결과 발광 피크의 모양이 다르게 나타났고 같은 천연과 합성 보석에서는 동일한 피크가 나타났다. 이들 발광 및 형광 특성은 보석들의 결정 구조와 관련이 있음을 관찰할 수 있었다. 325 nm He-Cd source에 의한 형광 조사에서는 합성 알렉산드라이트와 합성 칼라체인지 사파이어 그리고 천연 알렉산드라이트에서 강한 형광이 나타났고 이를 PL 피크로 확인하였다.

• 한국재료학회지
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• 제28권2호
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• pp.124-128
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• 2018

N-type porous silicon (PS) layers and thermally oxidized PS layers have been characterized by various measuring techniques such as photoluminescence (PL), Raman spectroscopy, IR, HRSEM and transmittance measurements. The top surface of PS layer shows a stronger photoluminescence peak than its bottom part, and this is ascribed to the difference in number of fine silicon particles of 2~3 nm in diameter. Observed characteristics of PL spectra are explained in terms of microstructures in the n-type PS layers. Common features for both p-type and n-type PS layers are as follows: the parts which can emit visible photoluminescence are not amorphous, but crystalline, and such parts are composed of nanocrystallites of several nm's whose orientations are slightly different from Si substrate, and such fine silicon particles absorb much hydrogen atoms near the surfaces. Light emission is strongly dependent on such fine silicon particles. Photoluminescence is due to charge carrier confinement in such three dimensional structure (sponge-like structure). Characteristics of visible light emission from n-type PS can be explained in terms of modification of band structure accompanied by bandgap widening and localized levels in bandstructure. It is also shown that hydrogen and oxygen atoms existing on residual silicon parts play an important role on emission stability.

• 공업화학
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• 제26권3호
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• pp.362-365
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• 2015

본 연구에서는 polyoxyethylenenonylphenylether (NP5) 계면활성제와 sodium bis(2-ethylhexyl) sulfosuccinate (AOT) 계면활성제가 형성하는 두 종류의 W/O 마이크로에멀젼을 이용해서 실리카에 담지된 ZnSe 양자점을 제조하였다. 본 방법으로 3 nm 크기의 cubic zinc blende 결정 구조를 갖는 ZnSe 입자를 합성하였으며 약 20 nm 크기의 실리카 입자에 효과적으로 담지 시킬 수 있었다. 합성된 입자의 photoluminescence (PL) 주변 온도 의존성을 $30^{\circ}C$에서 $60^{\circ}C$ 범위에서 확인한 결과, 온도가 증가함에 따라 PL intensity가 감소하였으며 PL intensity와 온도와는 높은 상관관계를 나타내었다. 아울러 PL intensity와 온도의 상관관계는 온도를 낮은 곳에서 올려가며 측정한 경우와 반대로 낮추며 측정한 경우 같은 상관도를 나타내어 온도 의존성이 가역적임을 알 수 있었다. 그 결과 실리카에 담지된 ZnSe 양자점이 온도 센서로 사용될 수 있는 잠재적인 매체임을 확인하였다.