• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.19.2-19.2
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• 2011

ZnO nanowires have been fabricated by vapor-liquid-solidification with hot-walled pulsed laser deposition method. The diameter of ZnO nanowire has been systematically controlled simply by changing the thickness of Au catalyst. Field effect transistors with different diameter have been fabricated by using photolithography and e-beam lithography. The threshold voltage of ZnO nanowire FET showed enhanced mode and depleted mode depending on the diameter of ZnO nanowires. This is mainly due to the change of the carrier concentration depending on the size of nanowires. We have fabricated ZnO nanowire inverters using nanowire FETs. This simple method to fabricate ZnO nano-inverter will be useful to open the possibility of ZnO nanoelectronic applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.237.1-237.1
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• 2011

Resistivity of GaN has been investigated under the influence of ion implantation. n-type, p-type and also undoped GaN has been used here. A ring shape pattern of Au was fabricated on GaN film by the photolithography technique. H, He and Ar were used for implantation. The ion implantation energy, fluence and post-implant annealing temperature varied in this research. Because of the making barrier in some selected area using ions, the resistivity changed in all the samples with the change of both fluence and energy. At room temperature, the resistivity of n-type GaN has been increased from $1.9{\times}10-2$ to $17.7{\times}10-2\;{\Omega}-cm$. This is high for He ion. But undoped and p-type GaN showed some anomalous character.

• Transactions of Materials Processing
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• v.15 no.1 s.82
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• pp.21-26
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• 2006

A optical head unit for nano optical probe array was developed. The optical probe array is generated by Talbot effect. The shape and thickness of microlens array(MLA) were designed to minimize the spot size at the foci of MLA. To increase the optical efficiency of the system and obtain the large tolerance for fabrication, aperture size was theoretically optimized. Then microlens illuminated aperture array(MLIAA) as an optical head unit was fabricated using a ultra violet(UV) molding process on aluminum aperture array. In this process, Al aperture array was fabricated separately using the photolithography and reactive ion etching(RIE) process. Optical properties of the generated optical probes were measured and compared at Talbot distance from the aperture array having a diameter of $1{\mu}m$ and MLIAA.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.10
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• pp.1584-1590
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• 1989

In this study, a planar waveguide has been fabricated on a Y-cut LiNbO3 substrate by the Ti indiffusion technique and its guiding characteristics are measured by bright M-line spectroscopy. Using the photolithography method, an electro-optic grating modulator with interdigital electrodes has been fabricated by depositing Al on the Ti:LiNbO3 planar waveguide. And the beam intensity diffracted by the grating is measured as the applied voltage is increased.

• Journal of Magnetics
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• v.13 no.1
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• pp.30-33
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• 2008

A highly sensitive, giant magnetoresistance-spin valve (GMR-SV) biosensing device with high linearity and very low hysteresis was fabricated by photolithography. The detection of magnetic nanoparticles and Fe-hemoglobin inside red blood cells using the GMR-SV biosensing device was investigated. When a sensing current of 1 mA was applied to the current electrode in the patterned active devices with an area of $2{\times}6{\mu}m^2$, the output signals were about 13.35 mV. The signal from even one drop of human blood and nanoparticles in distilled water was sufficient for their detection and analysis.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2001.02a
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• pp.92-94
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• 2001

We investigated quench recovery characteristics of Au/YBCO thin film meander lines. YB$a_{2}$$Cu_{3}$ $O_{7}$films were coated in-situ with a gold layer and patterned into 2 mm wide meander lines by photolithography. The limiters were tested with simulated fault currents at various source voltages. Resistance decreased first slowly and then rapidly to zero. Resistance vs. time curves for different source voltages fell on top of each other when translated horizontally. The slowly varying portion of data fell on straight lines of a slope on a semi-log scale at all source voltages. A heat balance equation reflecting heat loss from meander lines to surroundings explains these results quantitatively.

• Journal of Information Display
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• v.6 no.3
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• pp.12-17
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• 2005

The need for low cost, flexible, thin film transistor (TFT) display backplanes has focused attention on new processing techniques and materials. We report the development of TFT backplane technology based entirely on jet-printing, using a combination of additive and subtractive processing, to print active materials or etch masks. The technique eliminates the use of photolithography and has the potential to reduce the array manufacturing cost. The printing technique is demonstrated with both amorphous silicon and polymer semiconductor TFT arrays, and we show results of small prototype displays.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.851-854
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• 2008

In order to reduce the manufacturing cost of TFT LCDs and cut down an amount facilities invested, there are many LCD panel makers contributes to convert the current Five-mask manufacturing process into the noble Four-mask fabrication process. We optimized the slit mask to improve the poor process reliability.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.601-604
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• 2006

We have developed ZnO TFT array using conventional photolithography and wet etching processes. Transparent 20 nm of ultra thin ZnO film deposited by means of plasma enhanced atomic layer deposition at $100^{\circ}C$ was used for the active channel. The ZnO TFT has a mobility of $0.59cm^2/V.s$, a threshold voltage of 7.2V, sub-threshold swing of 0.64V/dec., and an on/off ratio of $10^8$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.987-989
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• 2006

1.52" $130(RGB){\times}130$ full color PM OLED device with $70\;{\mu}m{\times}210\;{\mu}m$ of sub-pixel pitch was fabricated using shadow mask method for metal cathode deposition. Instead of conventional patterning process to form cathode separator via photolithography, regularly patterned shadow mask was applied to deposit metal cathode in this OLED display. Metal cathode was patterned via 2-step evaporation using shadow mask with shape of rectangular stripe and its alignment margin is $2.5\;{\mu}m$. Technical advantages of this method include reduction of process time according to skipping over photolithographic process for cathode separator and minimizing pixel shrinkage caused by PR cathode separator as well as improving lifetime of OLED device.