• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.77-81
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• 2020

Resistive RAM (ReRAM)은 전이금속 산화물의 저항변화 특성을 이용하는 차세대 비휘발 메모리로 전이금속산화물 내의 산소공공의 재분포를 통한 저항변화 특성을 이용한다. 따라서 저항변화 특성을 위해 전이금속산화물 내에는 일정량 이상의 산소공공이 요구되며 이를 위해서는 박막 형성 공정에서 산화 수를 조절할 수 있는 공정이 필요하다. 본 연구에서는 직접패턴이 가능한 photochemical metal organic deposition (PMOD) 공정을 사용하여 UV 노출에 의해 photochemical metal organic precursor의 ligand가 분해되는 과정에서 전기장을 인가하여 박막내의 산화 수를 조절하는 실험을 진행하였다. Electric field assisted PMOD (EFAPMOD) 법을 이용하여 FeOx 박막의 산화 수 조절이 가능함을 x-ray photoelectron spectroscopy (XPS) 분석과 I-V 측정을 통하여 확인하였으며, EFAPMOD 공정 중 인가하는 전압의 크기를 조절하여 박막의 산화 수를 조절할 수 있음을 확인하였다. 따라서 EFAPMOD 공정 중 인가전압의 크기를 이용하여 저항변화 특성에 적합한 적정한 산화수를 가지는 금속산화물 박막을 얻고 그 저항변화 특성을 조정할 수 있음을 확인하였다.

• 한국재료학회지
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• 제18권2호
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• pp.98-102
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• 2008

The ferroelectric properties of UV irradiated and non-irradiated PZT films prepared via photochemical metal-organic deposition using photosensitive precursors were characterized. Fourier transform infrared spectroscopy showed that complete removal of organic groups was possible through UV exposure of the spin-coated PZT precursor films at room temperature. The measured remnant polarization values of UV-irradiated and non-irradiated PZT films after annealing at $650^{\circ}C$ were 29 and $23\;{\mu}C/cm^2$, respectively. The UV irradiation was found to be effective for the enhancement of the <111> growth orientation and ferroelectric property of PZT film and in the direct patterning in the fabrication of micro-patterned systems without dry etching.

• 마이크로전자및패키징학회지
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• 제21권1호
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• pp.13-17
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• 2014

The direct-patternable $SnO_2$ thin film was successfully fabricated by photochemical metal-organic deposition. The composition and chemical bonding state of $SnO_2$ thin film were analyzed by using X-ray photoelectron spectroscopy (XPS) from the surface to the interface with Si substrate. XPS depth profiling analysis allowed the determination of the atomic composition in $SnO_2$ film as a function of depth through the evolution of four elements of C 1s, Si 2p, Sn 3d, and O 1s core level peaks. At the top surface, nearly stoichiometric $SnO_2$ composition (O/Sn ratio is 1.92.) was observed due to surface oxidation but deficiency of oxygen was increased to the interface of patterned $SnO_2/Si$ substrate where the O/Sn ratio was about 1.73~1.75 at the films. This O deficient state of the film may act as an n-type semiconductor and allow $SnO_2$ to be applied as a transparent electrode in optoelectronic applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.336-336
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• 2008

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.25-29
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• 2020

광화학증착법 (PMOD; photochemical metal-organic deposition)을 이용하여 photoresist 및 etching 공정없이 pattern 된 TiO_x resistive switching (RS) 소자를 제작 및 그 특성을 평가하였다. Ti(IV) 2-ethylhexanoate를 출발물질로 사용하였으며 UV 노출시간 10 min에 광화학반응이 완료됨을 FTIR 분석을 통하여 확인하였다. 200 ℃ 이하 저온공정에서 직접패턴 된 20 nm 두께의 비정질 TiO_x 박막의 균일한 두께의 패턴형성을 Atomic Force Microscopy를 통하여 확인하였다. 별도의 상형성을 위한 후 열처리 공정 없이 4 ㎛ 선폭의 전극위에 형성된 20 nm 두께의 비정질 TiO_x RS 소자는 4V 동작전압에서 on/off ratio 20의 forming-less RS 특성을 나타내었다. Electrochemical migration에 영향을 미치는 grain boundary가 없어 소자간 신뢰성 향상이 기대되며, flexible 기판 또는 저온공정이 요구되는 메모리 소자 공정에서 PMOD 공정이 응용될 수 있음을 보여준다. Selector를 이용하여 crossbar array 구조를 도입할 경우 매우 간단한 구조의 저비용 메모리 소자를 구현할 수 있을 것으로 기대 된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.287-287
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• 2007

The ferroelectric and electric properties of UV-irradiated bismuth lanthanum titanate (BLT) films prepared using photosensitive starting precursors were characterized. The effects of lanthanum doping on ferroelectric and electric properties were investigated by polarization-electric field hysteresis loops and leakage current-voltage measurements. X-ray diffractometer and ellipsometry were served to provide the information about the crystalline structure and thickness of the films after annealing. The images of the surface microstructure and direct-patterned BLT films were observed by using scanning electron microscopy. The effects of lanthanum doping on the electric properties of direct-pattern able BLT films and their direct-patterning were studied.

• 한국재료학회지
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• 제20권10호
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• pp.513-517
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• 2010

There have been many efforts to modify and improve the properties of functional thin films by hybridization with nano-sized materials. For the fabrication of electronic circuits, micro-patterning is a commonly used process. For photochemical metal-organic deposition, photoresist and dry etching are not necessary for microscale patterning. We obtained direct-patternable $SnO_2$ thin films using a photosensitive solution containing Ag nanoparticles and/or multi-wall carbon nanotubes (MWNTs). The optical transmittance of direct-patternable $SnO_2$ thin films decreased with introduction of nanomaterials due to optical absorption and optical scattering by Ag nanoparticles and MWNTs, respectively. The crystallinity of the $SnO_2$ thin films was not much affected by an incorporation of Ag nanoparticles and MWNTs. In the case of mixed incorporation with Ag nanoparticles and MWNTs, the sheet resistance of $SnO_2$ thin films decreased relative to incorporation of either single component. Valence band spectral analyses of the nano-hybridized $SnO_2$ thin films showed a relation between band structural change and electrical resistance. Direct-patterning of $SnO_2$ hybrid films with a line-width of 30 ${\mu}m$ was successfully performed without photoresist or dry etching. These results suggest that a micro-patterned system can be simply fabricated, and the electrical properties of $SnO_2$ films can be improved by incorporating Ag nanoparticles and MWNTs.