• Current Optics and Photonics
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• v.5 no.3
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• pp.243-249
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• 2021

In this paper, the sensing characteristics of a double cladding fiber (DCF) long-period fiber grating (LPFG) to the surrounding refractive index (SRI) are studied. The outer cladding of the DCF plays the role of the overlay, thus, the mode transition (MT) phenomenon of DCF can be induced by etching the outer cladding radius instead of coating overlays. The response characteristics of the effective refractive index (ERI) of the cladding mode to the outer cladding radius are analyzed. It is found that in the MT range, the change rate of ERIs of cladding modes is relatively larger than that for other ranges. Further, based on the features of the mode transition region (MTR), the phase-matching curve of the 11^th cladding mode is investigated, and the response of the DCF-LPFG to the SRI is characterized by the change of wavelength intervals between the dual peaks under different outer cladding radii. The numerical simulation results show that the SRI sensitivity is greatly improved, which is available to 3484.0 nm/RIU with the fitting degree 0.998 in the SRI range of 1.33-1.37. The proposed DCF-LPFG can provide new theoretical support for designing the DCF-LPFG refractive index sensor with excellent performances of sensitivity, linearity and structure.

• Electrical & Electronic Materials
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• v.8 no.4
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• pp.426-433
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• 1995

Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10$\^$12/ and 10$\^$13/ions/cm$\^$2/. In ion implanted samples, the peaks related arsenic vacancy(V$\_$As/) were decreased but complex lattice defect was increased with annealing temperature. U band was observed at ion implanted(10$\^$13/ ions/cm$\^$2/) and thermally treated(550.deg. C) sample. More negative peak was detected after annealing at temperature between 600 and 700.deg. C. The measurement of dark current showed that the formation of B$\_$GA/-V$\_$As/, complex defect and complex lattice defect by ion implantation were a reasonable explanation for the decrease in dark current.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.342-342
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• 2012

Resistance-change Random Access Memory (ReRAM), which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• International Journal of Control, Automation, and Systems
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• v.1 no.2
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• pp.215-221
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• 2003

The education system in this paper is used to demonstrate and educate the effects of electromagnetic induction. Placing an aluminum ring over the core and switching on AC source causes the ring to jump in the air due to induced currents in the ring producing a magnetic field opposed to that produced in the core. To control the position of the ring by only the current, it is to require nonlinear control algorithm and control board that is composed of photo sensors, decode circuit, computer communication, and power electronics circuit. This paper provides the development for education system in detail and the effects of dynamic neural networks for nonlinear control with on line is studied.

• Journal of Information Display
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• v.10 no.4
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• pp.171-174
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• 2009

The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor ($\alpha$-IGZO TFT) were studied. When the $\alpha$-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The $\alpha$-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the $\alpha$-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the $\alpha$-IGZO films.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.182-186
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• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.

• Journal of Sensor Science and Technology
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• v.20 no.4
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• pp.230-233
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• 2011

In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.23-26
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• 2004

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current(MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.468-471
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• 2004

Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems premising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current (MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach. According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.