• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.66-66
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• 2006

Development of ArF Photo-lithography process has proceeded with the increase of numerical aperature (NA) and the decrease of resist thickness. It makes many problems such as cost and process complexity. A novel spin-on hard mask system is proposed to overcome many problems Spin-on hard mask composed of two layers of siloxane and carbon. The optical thickness of two layers is designed from reflectivity measurement at specified n, k respectively. The property of photo-resist shows different results according to Si contents. Si-contents was measured XPS(X-ray Photoelectron spectroscopy).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.768-771
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• 2003

Nowadays, the study on the ceramic components and modules used in telecommunication system is being performed. Duplexer is the one of the most important components and has the role of dividing Rx and Tx signal. Duplexer including the FBAR is being done vigorously LTCC is used for package like SAW package, duplexer package. In our research, LTCC material is used for FBAR duplexer package and photo-lithography for the fine line phase shifter. The good characteristics, low loss and good isolation, of duplexer is obtained by the fine line phase shifter having high characteristic impedance of stripline.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.362-362
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• 2010

최근 반도체 산업은 지속적인 design rule 감소로 인해 미세 pattern 공정이 요구되고 있으며, 그 중 photo lithography 공정의 scanner overlay margin 확보가 시급하게 되었다. 본 연구는 scanner 장비의 overlay 능력 개선 item 발굴에 관한 연구로서 6개월간 해당 장비에 대해 overlay monitor를 평가하여 scanner의 기계적 요소가 주는 overlay 영향 기인성 최악의 다섯 가지 budget item을 도출하였다. 본 연구를 통해 도출 된 최악의 다섯 가지 budget item(chuck 간 생김 정도 오차, chuck 간편차, chuck 간 mirror 생길 정도 오차, stage 정확성, 마스크 정렬) 성분들을 monitoring 함으로써 overlay 향상에 크게 기여할 것으로 예상한다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.72-73
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• 2012

Metal line을 형성하는 방법에는 그라비아 인쇄, 잉크젯 인쇄, photo 공정 후 박막 증착 공정 등을 많이 사용한다. 본 연구에서는 Micro-imprinting 공정과 DFR photo lithography 공정을 통해 음각의 미세한 pattern을 형성한 후 sputtering과 printing을 이용하여 pattern의 filling을 통해 metal line을 구현하는 것을 목표로 하였다. Pattern을 형성한 후 RIE 공정을 통해 기판 표면의 친수성 처리를 하고, SAM 공정을 통해 코팅 막의 소수성 처리를 하였다. Sputtering과 전면 프린팅 및 건조 후 strip 공정을 통해 metal line을 형성하고, 이에 대한 표면 특성과 전기적 특성을 분석하였다.

• 한국공작기계학회논문집
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• 제17권2호
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• pp.104-109
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• 2008

Nowadays, the researches for improving LCD manufacturing process and reducing cost are getting accelerated and additionally new types of process are widely developed. In this situation, APEM(Anti Photo Exposure Method) which does not need photo-lithography is realized as one of possible alternative of LCD process. APEM makes LCD pattern by stamping and it can reduce the process cost and process time because of its simplicity. But optical alignment between pattern glass and target glass is very critical fact to realize the precise patterns. So, the analysis of deflection of large size of glass is carried out and design of experiment method is applied for optimal design of jig.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.73-80
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• 2013

In the process of lithography using ultra violet light sources for semiconductor devices, most of defects are made by sub-micrometer pollutants generated at photochemical reactions. We proposed and developed a novel vibration-insensitive on-axis interferometer with a sub-micrometer lateral resolution by using the interference between two beams: one scattered from defects and the other reflected from a reference area without defects. The proposed system was successfully demonstrated to detect a small Al defect of 0.5 ${\mu}m$ diameter within the inspection time of less than 30 minutes over the area of the photo-mask which is 6 inch by 6 inch square.

• Journal of the Optical Society of Korea
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• 제6권4호
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• pp.180-184
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• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

• Bulletin of the Korean Chemical Society
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• 제30권6호
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• pp.1245-1246
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• 2009

• Journal of Information Display
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• 제2권4호
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• pp.15-18
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• 2001

We report simple techniques to manufacture low-powered, high-resolution, reflective cholesteric displays using flexible plastic substrates. We use wax transfer printing to replace photo-lithography and incorporate polymer walls to increase the mechanical strength and lifetime of the displays. These printing methods can easily be adapted to roll-to-roll production.

• 한국광학회:학술대회논문집
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• 한국광학회 2003년도 하계학술발표회
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• pp.288-289
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• 2003

금속 박막 위의 알칸티올분자의 흡착에 의한 자기조립단분자막(SAMs)은 접착 방지, 마찰 저하 등의 기능을 가진 코팅층으로서의 응용과 분자 또는 생분자의 미세 구조물 형성을 위한 방법으로 널리 연구되어지고 있다. 이러한 연구 중에서 자기조림단분자막(SAMs)의 매우 얇은 두께(수 nm)의 특성을 활용하여 AFM tip Scratching Lithography 또는 알칸티올 포토패터닝(alkanethiol Photopatterning) 방법을 사용함으로써 microscale의 패턴을 형성하는 연구 결과가 많은 이들의 관심을 받아왔다. (중략)