• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.301-304
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• 2008

This paper presents the experimental results on breakdown characteristics in $N_2$ gas under non-uniform electric fields caused by both the positive and negative lightning impulse voltages. $N_2$ gas have an advantage of eco-friendly and cost reduction, and safety aspects. In order to analyze the impulse pre-breakdown processes in $N_2$ gas, we carried out measurements and observations of the impulse breakdown voltages, pre-breakdown current and luminous signals. They were measured by a voltage divider, a shunt and a photo-multiplier tube, respectively. Additionally, the characteristics of discharge channels were observed by high speed cameras. The breakdown voltages in the positive polarity was lower than those in the negative polarity.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.408-408
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• 2014

Graphene has received attention with its high electron mobility and visual transparency as a promising material for optoelectronic and photonic applications. Combination of graphene and conducting nanostructures i.e. plasmonic structures has recently been researched for enhancing light-matter interaction and overcoming diffraction limit of light. Here we show enhanced photodetection of incoherent visible light with graphene-mediated plasmonics. Gold nanoparticles fabricated by focused ion beam was used as an active element of photodetection and graphene was utilized as an interfacing material between nanostructures and electrodes. Hot electrons generated upon plasmon decay within nanoparticles pass over the potential barrier between nanostructure and graphene and give rise to a photocurrent with built-in electric field. We report 76.7% enhancement of photocurrent under resonant irradiation of fiber-coupled halogen lamp compared to the case without light illumination. We showed wavelength-dependent current response arisen from plasmonic nanostructure, providing a good agreement with theoretical calculation.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.492-492
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• 2014

On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

• Journal of Information Display
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• v.10 no.4
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• pp.171-174
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• 2009

The optical and electrical properties of the amorphous indium gallium zinc oxide thin-film transistor ($\alpha$-IGZO TFT) were studied. When the $\alpha$-IGZO TFT was illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm it increased significantly. The $\alpha$-IGZO TFT was found to be extremely sensitive, with deep-level defects at approximately 2.25 eV near the midgap. After UV light illumination, a slight change occurred on the surface of the $\alpha$-IGZO films, such as in terms of the oxygen 1s spectra, resistivity, and carrier concentrations. It is believed that these results will provide information regarding the photo-induced behaviors in the $\alpha$-IGZO films.

• Journal of Electrical Engineering and Technology
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• v.6 no.3
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• pp.402-407
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• 2011

The current paper describes a simpler ground-type, single-plate electrowetting configuration for droplet transport in digital microfluidics without performance degradation. The simplified fabrication process is achieved with two photolithography steps. The first step simultaneously patterns both a control electrode array and a reference electrode on a substrate. The second step patterns a dielectric layer at the top to expose the reference electrode for grounding the liquid droplet. In the experiment, a $5{\mu}m$ thick photo-imageable polyimide, with a 3.3 dielectric constant, is used as the dielectric layer. A 10 nm Teflon-AF is coated to obtain a hydrophobic surface with a high water advancing angle of $116^{\circ}$ and a small contact angle hysteresis of $5^{\circ}$. The droplet movement of 1 mM methylene blue on this simplified device is successfully demonstrated at control voltages above the required 45 V to overcome the contact angle hysteresis.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.489-489
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• 2011

The effect of Si quantum dots for solar cell appications was investigated. The 5 ~ 10 nm Si nanoparticle was fabricated on p-type single and poly crystalline wafer by magnetron sputtering and laser irradiation process. Scanning electron microscopy (SEM), atomic force measurement (AFM) and transmission electron microscopy (TEM) images showed that the Si QDs array were clearly embedded in insulating layer ($SiO_2$). Photoluminesence (PL) measurements reliably exhibited bandgap transitions with every size of Si QDs. The photo-current measurements were showed different result with size of QD and number of superlattice.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.413-414
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• 2012

Programmable Metallization Cell (PMC) memory, which utilizes electrochemical control of nanoscale quantities of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We measured the I-V characteristics by field-effect of the device. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

• KSBB Journal
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• v.29 no.1
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• pp.9-21
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• 2014

One of the most abundant microalgaes, diatom is characterized by its unique cell wall structures composed of nano-patterned silica. Due to its highly ordered porosity, these silica frustules, which are found as sediments called diatomite, were used as a cheap adsorption material for water purification. Recently, new emerging nanotechnology compels many researchers to have interest in such diatom's unique properties (eg, nano-scale mesoporosity, photo luminescence, light transparency, etc.) as biogenic inorganic materials as well as the biomass resource (conventional usage of microalgae). In this review, we will focus on the current knowledge about the diatoms research and the possibility of its applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.65-66
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• 2000

Various fluoride films on a glass substrate were prepared and characterized to provide a seed layer for crystalline Si film growth. The XRD analysis on $CaF_2/glass$ illustrated (220) preferential orientation and showed lattice mismatch less than 5 % with Si. We achieved a fluoride film with breakdown electric field of 1.27 MV/cm, leakage current density about $10^{-6}$ $A/cm^2$, and relative dielectric constant less than 5.6. This paper demonstrates microcrystalline silicon $({\mu}c-Si)$ film growth by using a $CaF_2/glass$ substrate. The ${\mu}c-Si$ films exhibited crystallization in (111) and (220) planes, grain size of $700\;{\AA}$, crystalline volume fraction over 65 %, dark- and photo-conductivity ratio of 124, activation energy of 0.49 eV, and dark conductivity less than $4{\times}10^{-7}$ S/cm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.182-186
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• 2012

Resistance-change Random Access Memory(ReRAM) memory, which utilizes electrochemical control of metal in thin films of solid electrolyte, shows great promise as a future solid state memory. The technology utilizes the electrochemical formation and removal of metallic pathways in thin films of solid electrolyte. Key attributes are low voltage and current operation, excellent scalability, and a simple fabrication sequence. In this work, we investigated the nature of thin films formed by photo doping of $Ag^+$ ions into chalcogenide materials for use in solid electrolyte of Resistance-change RAM devices and switching characteristics according to field-effect.