TCO Workfunction Engineering with Oxygen Reactive Sputtering Method for Silicon Heterojunction Sola Cell Application

  • 봉성재 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부) ;
  • 김선보 (성균관대학교 에너지에너지과학과) ;
  • 안시현 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부) ;
  • 박형식 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부) ;
  • 이준신 (성균관대학교 정보통신대학 전자전기컴퓨터 공학부)
  • Published : 2014.02.10

Abstract

On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

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