• Current Photovoltaic Research
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• v.3 no.3
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• Journal of the Korean Chemical Society
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• v.37 no.12
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• pp.1010-1018
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• 1993

The titanium oxide thin films were prepared by anodic oxidation. The Photo-electrochemical properties of the electrodes were studied in 1 M NaOH solution. The flat band potentials of $TiO_2$ electrodes prepared by anodic oxidation showed around -0.8V and the values were shifted 0.2V to the positive potential direction that of single crystal $TiO_2$. Reduction potential of oxygen by cyclic voltammetry showed around -0.95V vs. SCE and these reactions were processed totally irreversible. The photocurrent of electrodes were showed shorter wavelength than that of single crystal $TiO_2$ and its current density decreased.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.115-119
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• 2014

$Cu(In,Ga)Se_2$ (CIGS) thin films have been used as a light absorbing layer in high-efficiency solar cells. In order to improve the quality of the CIGS thin film, often selenization step is applied. Especially when the thin film was formed by non-vacuum powder process, selenization can help to induce grain growth of powder and densification of the thin film. However, selenization is not trivial. It requires either the use of toxic gas, $H_2Se$, or expensive equipment which raises the overall manufacturing cost. Herein, we would like to deliver a new, simple method for selenization. In this method, instead of using a costly two-zone furnace, use of a regular tube furnace is required and selenium is supplied by a mixture of selenium and ceramic powder such as alumina. By adjusting the ratio of selenium vs. alumina powder, selenium vaporization can be carefully controlled. Under the optimized condition, steady supply of selenium vapor was possible which was evidently shown by large grain growth of CIGS within a thin powder layer.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.44-51
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• 2013

For preparing a device-quality $CuInSe_2$ (CISe) light-absorbing layer by single-bath electrodeposition for a superstrate-type CISe cell, morphological properties of the CISe layers were investigated by varying concentrations of sulfamic acid and potassium biphthalate, complexing/buffering agents. CISe films were grown on an $In_2Se_3$ film by applying a constant voltage of -0.5V versus Ag/AgCl for 90 min in a solution with precursors of $CuCl_2$, $InCl_3$, and $SeO_2$, and a KCl electrolyte. A dense and smooth layer of CISe could be obtained with a solution containing both sulfamic acid and potassium biphthalate in a narrow concentration range of combination. A CISe layer prepared on the $In_2Se_3$ film with proper concentrations of complexing/buffering agents exhibited thickness of $1.6{\sim}1.8{\mu}m$ with few undesirable secondary phases. On the other hand, when the bath solution did not contain either sulfamic acid or potassium biphthalate, a CISe film appeared to contain undesirable flake-shape $Cu_{2-x}Se$ phases or sparse pores in the upper part of film.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.4
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• pp.821-825
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• 2004

The a-Si：H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si：H TFTs is inverted staggered. The gate electrode is formed by patterning with length of 8 ${\mu}m∼16 ${\mu}m. and width of 80∼200 ${\mu}m after depositing with gate electrode (Cr) 1500 under coming 7059 glass substrate. We have fabricated a-SiN：H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN：H (2000 ), a-Si：H(2000 ) and n+a-Si：H (500). We have deposited n+a-Si：H ,NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si：H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si：H TFTs decreasing parasitic capacitance of source-drain has channel length of 8 ~20 ${\mu}m and channel width of 80∼200 ${\mu}m. And it shows drain current of 8 ${\mu}A at 20 gate voltages, Ion/Ioff ratio of 108 and Vth of 4 volts.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.502-502
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• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• Journal of Digital Convergence
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• v.19 no.10
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• pp.75-86
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• 2021

Recently, the domestic BIPV market is expected to revitalize with the introduction of the "zero-energy building certification system(2020~)", but it is somewhat stagnant due to the rigidity of definitions in the current domestic BIPV construction standards. Also, since there is delaying revision on definition and standardization of BIPV, the system is so weak that there are cases where it has been approved as BIPV simply by installing a structure on the wall and fixing the module roughly. The damage caused by this can be passed on to consumers, and it can only create a negative perception of BIPV and jeopardize the entire market. The BIPV definition was prepared through a Delphi survey of related experts about market stagnant cause, unreasonable regulation, etc, and a revised plan was derived accordingly.

• Current Photovoltaic Research
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• v.11 no.3
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• pp.79-86
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• 2023

As we strive to mitigate the environmental impact caused by the use of fossil fuels, the exploration of alternative energy sources has gained significant attention. Solar energy, in particular, has emerged as a promising solution due to its eco-friendly nature and virtually limitless availability. Among the various types of solar cells that harness this abundant energy source, organic solar cells have garnered considerable interest. Organic solar cells feature a photo-active layer composed of organic semiconductors, offering a range of appealing advantages such as cost-effectiveness, flexibility, translucency, and the ability to produce customizable colors. However, the commercialization of organic solar cells has been impeded by certain challenges, notably their relatively low efficiency and stability. To overcome these obstacles and pave the way for wider adoption, researchers have been exploring innovative approaches, including the implementation of ternary blend organic solar cells. This strategy involves introducing a third component into the photo-active layer alongside the organic semiconductors, with the aim of enhancing the overall performance of the solar cell. In this paper, we delve into the issues associated with organic solar cells and focus on one potential solution: ternary blend organic solar cells. Specifically, we examine the application of this approach to PM6:Y6, which stands as one of the most popular combinations of organic semiconductors. By investigating the potential of ternary blends, particularly utilizing PM6:Y6, we aim to accelerate the commercialization of organic solar cells.

• Journal of The Geomorphological Association of Korea
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• v.28 no.2
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• pp.45-57
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• 2021

In this study, the changes in morphology of Dokdo's gravel beach and its responses due to a storm event were analyzed using the aerial photos and 3D LiDAR data obtained during an ecosystem survey of the Dokdo in 2020. Dongdo Island's gravel beach, shown by aerial photo analysis, increased in area due to sedimentation after the construction of a dock, but there was no more significant changes in area after having grown to Sutdolbawi inside the dock. The changes in volume of the gravel beach were indicated based on 3D data acquired in May and November 2020. A strong typhoon that passed in September, 2002, caused erosion on the backshore and sedimentation on the foreshore and formed the berm by about 1.5 to 2 m high. The analysis showed that the sedimentation was 94.76 m³ in volume and 329 m² in area and the erosion was 250.75 m³ in volume and 603m² in area, which suggested that the overall change of the gravel beach was erosion. The changes in the morphology of the gravel beach on Seodo Island occurred with the seasons along with the changes in area. In addition, berms of different altitudes appeared on the southern and northern sides of the spit, which was also estimated to have formed by the seasonal current direction and wave energy.

• Nanomaterials
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• v.12 no.7
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• pp.1061-1074
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• 2022

In this work, a self-powered, solar-blind photodetector, based on InZnSnO (IZTO) as a Schottky contact, was deposited on the top of Si-doped β-Ga₂O₃ by the sputtering of two-faced targets with InSnO (ITO) as an ohmic contact. A detailed numerical simulation was performed by using the measured J-V characteristics of IZTO/β-Ga₂O₃ Schottky barrier diodes (SBDs) in the dark. Good agreement between the simulation and the measurement was achieved by studying the effect of the IZTO workfunction, β-Ga₂O₃ interfacial layer (IL) electron affinity, and the concentrations of interfacial traps. The IZTO/β-Ga₂O₃ (SBDs) was tested at a wavelength of 255 nm with the photo power density of 1 mW/cm². A high photo-to-dark current ratio of 3.70×10⁵ and a photoresponsivity of 0.64 mA/W were obtained at 0 V as self-powered operation. Finally, with increasing power density the photocurrent increased, and a 17.80 mA/W responsivity under 10 mW/cm² was obtained.