• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.6
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• pp.34-41
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• 1984

MOEN/MO double layer which is to be used It)r the RMOS (refractory metal oxide semiconductor) gate material has been fabricated by means of low temperature reactive sputtering in N2 and Ar mixture. Good Mo2N film was obtained in the volumetric mixture of Ar:N2=95:5. The sheet resistance of the fabricated Mo7N film was about 1.20 - 1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film, and this would enable to improve the operational speed of devices fabricated with this material. When PSG (phosphorus silicate glass) was used as impurity diffusion source for the source and drain of the RMOSFET in the N2 atmosphere at about 110$0^{\circ}C$, the Mo2N was reduced to Mo resulting in much smaller sheet resistance of about 0.38 ohm/square. The threshold voltage of the RMOSFET fabricated in our experiment was - 1.5 V, and both depletion and enhancement mode RMOSFETs could be obtained.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.240-244
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• 2011

The high cost of crystalline silicon solar cells has been considered as one of the major obstacles to their terrestrial applications. Spin on doping (SOD) is presented as a useful process for the manufacturing of low cost solar cells. Phosphorus (P509) was used as an n-type emitters of solar cells. N-type emitters were formed on p-type EFG ribbon Si wafers by using a SOD at different spin speed (1,000~4,000 rpm), diffusion temperatures ($800^{\circ}C{\sim}950^{\circ}C$), and diffusion time (5~30 min) in $N_2+O_2$ atmosphere. With optimum condition, we were able to achieve cell efficiency of 14.1%.

• Composites Research
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• v.33 no.4
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• pp.177-184
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• 2020

Flame retardant(FR) clothes prohibit additional fire diffusion and make the personnel do their tasks without a hitch in a flammable environment. The existing FR clothes, however, are heavy and give high thermal fatigue. Therefore, it is strongly demanded to develop a light, convenient, and eco-friendly clothes. Recently, many works have been reported to make FR fabrics with phosphorus compounds, but their performance could not satisfy the specified criteria in appraisal standards of domestic and American FR clothes or combat uniforms. In this paper, two kinds of phosphorus compounds were applied to cotton fabric. Graphene oxide functionalized with a phosphorus-rich deep eutectic solvent and ammonium polyphosphate were coated on cotton fabric by eco-friendly padding procedure. The coated fabrics were analyzed with thermogravimetric analysis, vertical flame resistance test(ASTM D6413), cone calorimeter test(ISO 5660-1), and method of test for limited flame spread(ISO 15025). It was revealed that the as-made cotton with those two materials simultaneously had better flame resistance than the cottons with each one. Furthermore, an additional coating for hydrophobicity on the FR cotton was tried for better washing fastness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.105-109
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• 1992

ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

• Applied Microscopy
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• v.50
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• pp.17.1-17.9
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• 2020

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

• Journal of Sensor Science and Technology
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• v.8 no.3
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• pp.283-290
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• 1999

The $n^+/p/p^+$ junction PERL solar cell of $0.1{\sim}2{\Omega}{\cdot}cm$ (100) p type silicon wafer was fabricated through the following steps; that is, wafer cutting, inverted pyramidally textured surfaces etching by KOH, phosphorus and boron diffusion, anti-reflection coating, grid formation and contact annealing. At this time, the optical characteristics of device surface and the efficiency of doping concentration for resistivity were investigated. And diffusion depth and doping concentration for n+ doping were simulated by silvaco program. Then their results were compared with measured results. Under the illumination of AM (air mass)1.5, $100\;mW/cm^2$ $I_{sc}$, $V_{oc}$, fill factor and the conversion efficiency were 43mA, 0.6 V, 0.62. and 16% respectively.

• Journal of Korea Water Resources Association
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• v.55 no.10
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• pp.785-799
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• 2022

The aim of this study was to characterize the emission pathways and the footprint of greenhouse gases (GHG) in Daecheong Reservoir using the G-res Tool, and to evaluate the GHG emission intensity (EI) compared to other energy sources. In addition, the change in GHG emissions was assessed in response to the total phosphorus (TP) concentration. The GHG flux in post-impoundment was found to be 262 gCO₂eq/m²/yr, of which CO₂ and CH₄ were 45.7% and 54.2%, respectively. Diffusion of CO₂ contributed the most, followed by diffusion, degassing, and bubbling of CH₄. The net GHG flux increased to 510 gCO₂eq/m²/yr because the forest (as CO₂ sink) was lost after dam construction. The EI of Daecheong Reservoir was 86.8 gCO₂eq/kWh, which is 3.7 times higher than the global EI of hydroelectric power, due to its low power density. However, it was remarkable to highlight the value to be 9.5 times less than that of coal, a fossil fuel. We also found that a decrease in TP concentration in the reservoir leads to a decrease in GHG emissions. The results can be used to improve understanding of the GHG emission characteristics and to reduce uncertainty of the national GHG inventory of dam reservoirs.

• Journal of Ocean Engineering and Technology
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• v.20 no.1 s.68
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• pp.55-62
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• 2006

Recently, pollution by development in coastal areas is going from bad to worse. The Korean government is attempting to make policies that prevent water pollution, but it is still difficult to say whether such measures are lowering pollution to an acceptable level. More specifically, the general investigation that has been done in KOREA does not accurately reflect the actual conditions of pollution in coastal areas. An investigation that quantitatively assesses water quality management using rational prediction technology must be attempted, and the ecosystem model, which incorporates both the 3-dimensional hydrodynamic and material cycle models, is the only one with a broad enough scope to obtain accurate results. The hydrodynamic model, which includes advection and diffusion, accounts for the ever-changing flow and (quality) of water in coastal areas, while the material cycle model accounts for pollutants and components of decomposition as sources of the carbon, phosphorus, and nitrogen cycles. In this paper, we simulated the rates of dissolved oxygen (DO), chemical oxygen demand (COD), total nitrogen(T-N) and total-phosphorous(T-P) in Korea's Ulsan Area. Using the ecosystem model, we did simulations using a specific set of parameters and did comparative analysis to determine those most appropriate for the actual environmental characteristics of Ulsan Area. The simulation was successful, making it now possible to predict the likelihood of coastal construction projects causing ecological damage, such as eutrophication and red tide. Our model can also be used in the environmental impact assessment (EIA) of future development projects in the ocean.