• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.525-528
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• 1999

The luminescence of bismuth and cerium doped yttrium aluminum based Phosphors $Y_{3}$/Al$_{5}$/O$_{12}$ and (Y$_{0.8}$/Gd$_{0.2}$)$_3$Al$_{5}$/O$_{12}$ prepared by a solid-state reaction method were studied. These samples which were fired at 1, 20$0^{\circ}C$ show the characteristic X-ray diffraction patters for the main phase(420) of YAG. This study indicates that the both flux and remained bismuth after the firing phosphor materials give rise to affect the photoluminescence properties. Therefore, it was investigated that both the XRD patterns arid the PL properties were affected by the controlling experimental process variables.riables.les.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.840-844
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• 2002

A spherical $BaMgAl_{10}$ $O_{17}$ :Eu phosphor has been synthesized by a multi-step precipitation route. In order to successfully synthesize the phosphor with spherical shape, the hydrated-alumina particles should be controlled for spherical shape. In this process, the hydroxypropyl cellulose (HPC) was used as a dispersing reagent. This reagent plays an important role in that the particles were controlled to have the uniform size of sub-micron. The final product prepared by the multi-step precipitation method maintained spherical shape with uniform size of 0.4$\mu\textrm{m}$. It can be seen in X-ray diffraction patterns, formation of the single phase of $BaMgAl_{10}$ $O_{17}$ :Eu phosphor prepared by the multi-step precipitation method at $1350^{\circ}C$. Also, the emission spectra of spherical $BaMgAl_{O}$ $10_{17}$ :Eu phosphor in the present case was compared with those of commercially-available blue phosphor under VUV (Vacuum Ultra Violet) excitation. The luminescence process of the $BaMgAl_{10}$ $O_{17}$ :Eu phosphor is characterized by the $4f^{6}$$5d^1$longrightarrow4f$^{7}$ transition (blue) of the $Eu^{2+}$ ion acting as an activating center and the maximum luminescence intensity was obtained by reduction treatment at 145$0^{\circ}C$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.125-125
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• 2009

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.29-32
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• 2008

The electron charging and degradation of anode phosphor layers are showed major problems in high electric field with anode electrode of field emission devices. An AI metal layer on the phosphor layer may get rid of these problems. This Hetero-metal-oxide phosphor layer are formed with the roughness of phosphor surface layer without interlayer and cannot be given rise to enhance the luminance efficiency. In order to enhance the brightness, an anode layer need to be flated between phosphor layer and AI metal layer in anode electrode. After optimizing the anode phosphor layer, an anode layer with AI metal and inter layer increased the brightness and luminescence efficiency 1.2 times more than only phosphor laver in anode.

• Journal of Powder Materials
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• v.15 no.5
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• pp.399-404
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• 2008

Spray pyrolysis was applied to prepare $M_{3}MgSi_{2}O_{8}:Eu^{2+}$ (M=Ca, Sr, Ba) blue phosphor powder. The library of a Ca-Sr-Ba ternary system was obtained by a combinatorial method combined with the spray pyrolysis in order to optimize the luminescent property under vacuum ultraviolet (VUV) excitation. 10 potential compositions were chosen from the first screening. The emission shifted to longer wavelength as Ca became a dominant element and the emission intensity was greatly reduced in the composition region at which Ba is dominant element. On the base of the first screening result, the second fine tuning was carried out in order to optimize the luminescence intensity under VUV excitation. The optimal composition for the highest luminescence intensity was $(Ca_{1.7},\;Sr_{0.3},\;Ba_{1.0})Si_{2}O_{8}:Eu^{2+}$ which had the color coordinate of (0.152, 0.072) and about 64% emission intensity of $BaMgAl_{10}O_{17}$ (BAM) phosphor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.322-323
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• 2006

The nano-sized Ce-doped YAG(Yttrium Aluminum Garnet, $Y_3Al_5O_{12}$) phosphor powders were prepared by combustion method from a mixed aqueous solution of metal nitrates, using citric acid as a fuel. The luminescence formation process and structure of phosphor powders were investigated by means of XRD, SEM and PL. The XRD patterns show that YAG phase can form at all of the $Ce^{3+}$ concentration. However, when $Ce^{3+}$ concentration is over 2.0mol%, XRD patterns show $CeO_2$ peak between (321) peak and (400) peak. The pure crystalline YAG:Ce with uniform size of 30nm was obtained at 0.6mol% of the $Ce^{3+}$ concentration. The crystalline YAG:Ce powders showed broad emission peaks in the range 475~630nm and had maximum intensity at 526nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.11
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• pp.1020-1024
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• 2006

Europium$(Eu^{2+}\;or\;Eu^{3+})$-activated calcium aluminium silicate phosphors were synthesized for the first time and the structures and luminescence characteristics of these phosphors were investigated. The phosphors in this study emitted blue, green, and even red light depending on the starting milterials and annealing conditions for synthesis. In addition, the structure was also changed when the different starting materials were used. When $CaCO_3$ was used as a starting material, tetragonal $Ca_2Al_2SiO_7$ was formed. However, pure green light was emitted when the annealing was conducted in reduced atmosphere and red one was emitted by annealing in air. In the case of $CaSiO_3$ as a starting material, triclinic $CaAl_2Si_2O_8$ was formed and only pure blue emission was observed. Moreover, this blue phosphor exhibited higher intensity than that of commercial YAG:Ce phosphor, which showed the possibility of application on the phosphor for new light source such as a UV-LED.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2007.05a
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• pp.7-10
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• 2007

The electron charging and degradation of anode phosphor layers are showed major problems in high electric field with anode electrode of field emission devices. An Al metal layer on the phosphor layer may get rid of these problems. This Al metal layer are formed with the roughness of phosphor surface layer without interlayer and cannot be given rise to enhance the luminance efficiency. In order to enhance the brightness, an anode layer need to be flated between phosphor layer and Al metal layer in anode electrode. After optimizing the anode phosphor layer, an anode layer with Al metal and inter layer increased the brightness and luminescence efficiency 1.5 times more than only phosphor layer in anode.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.243-252
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• 2002

We propose a new concept: that of photonic crystal phosphors (PCPs) for display and phosphor related applications. It is well known that microcavities with dimensions comparable to the emitting wavelength strongly enhance light-matter interactions, resulting in a significant increase in spontaneous emission rate, which can be directly translated into enhancement in phosphor efficiency. In recent simulations we have demonstrated that when a microcavity is formed in a nano-phosphor structure, the luminescence band is modified, and can be made spectrally sharp and tunable by engineering the geometry/material properties of the cavity and the surrounding photonic crystal lattice. New phosphor material structures based on photonic crystals are proposed. Applications to thin film EL phosphors and particle phosphors are discussed. Additionally, economic methods of synthesizing and incorporating PCPs into current display applications are proposed.

• Journal of the Korean Ceramic Society
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• v.43 no.3 s.286
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• pp.169-172
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• 2006

We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.