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http://dx.doi.org/10.4191/KCERS.2006.43.3.169

Luminescence Characteristics of Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes  

Choi, Kyoung-Jae (Advanced Materials Division, Korea Research Institute of Chemical Technology)
Park, Joung-Kyu (Advanced Materials Division, Korea Research Institute of Chemical Technology)
Kim, Kyung-Nam (Advanced Materials Division, Korea Research Institute of Chemical Technology)
Kim, Chang-Hae (Advanced Materials Division, Korea Research Institute of Chemical Technology)
Kim, Ho-Kun (Department of Applied Chemistry, Hanyang University)
Publication Information
Journal of the Korean Ceramic Society / v.43, no.3, 2006 , pp. 169-172 More about this Journal
Abstract
We have synthesized a $Eu^{2+}-activated\;{(Sr,Ba)}_2SiO_4$ yellow phosphor and investigated the development of blue LEDs by combining the phosphor with a InGaN blue LED chip (${\lambda}_{em}$=405 nm). The InGaN-based ${(Sr,Ba)}_2SiO_{4}:Eu$ LED lamp shows two bands at 405 nm and 550 nm. The 405 nm emission band is due to a radiative recombination from a InGaN active layer. This 405 nm emission was used as an optical transition of the ${(Sr,Ba)}_2SiO_{4}:Eu$ phosphor. The 550 nm emission band is ascribed to a radiative recombination of $Eu^{2+}$ impurity ions in the ${(Sr,Ba)}_2SiO_4$ host matrix. In the preparation of UV Yellow LED Lamp with ${(Sr,Ba)}_2SiO_{4}:Eu$ yellow phosphor, the highest luminescence efficiency was obtained at the epoxy-to-yellow phosphor ratio of 1:0.45. At this ratio, the CIE chromaticity was x=0.4097 and y=0.5488.
Keywords
Phosphor; LED(Light Emitting Diode); PL; UV yellow LED lamp;
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