• 대한화학회지
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• 제65권2호
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• pp.145-150
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• 2021

The present study describes a hands-on experiment to help students understand the concept of phase change or phase transition and its application in a phase change material (PCM). PCMs are substances that have the capability of storing and releasing large amounts of thermal energy. They act as energy storage materials that provide an effective way to save energy by reducing the electricity required for heating and cooling. Lauric acid (LA) was selected as an example of the PCM. Students investigated the temperature change of LA and the temperature (of air) inside the test tube. The differences in the temperatures of the systems helped students understand how PCMs work. A one-group pretest and posttest design was implemented with 34 grade-11 students in science and mathematics. Students' understanding was assessed using a multiple-choice test and a questionnaire. The findings revealed that the designed activity helped students understand the concept of phase change and its application to materials for thermal energy storage.

• Journal of Advanced Marine Engineering and Technology
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• 제26권1호
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• pp.23-29
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• 2002

Solid-liquid phase change (i.e. melting or solidification) occurs in a number of situations of practical interest. Some common examples include the melting of edible oil, metallurgical process such as casting and welding, and materials science applications such as crystal growth. Therefore, due to the practical importance of the subject, there have been a large number of experimental and numerical studies of problems involving phase change during the past few decades. Also, this study presented the effective way to enhance phase change heat transfer.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2008년도 제31회 추계학술대회논문집
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• pp.60-63
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• 2008

고에너지 물질의 상변화는 연소과정에서 발생하는 필연적으로 중요한 요소이다. 연소과정에서 발생한 고온, 고압의 가스는 주변의 물질과 상호작용을 통해 복잡한 현상을 일으키게 된다. 본 연구에서는 고에너지 물질의 상변화를 해석을 하기 위한 기초 연구로 상변화 변수를 이용하여, 증기 폭발을 해석하였다.

• 한국전기전자재료학회논문지
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• 제30권2호
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• pp.86-90
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• 2017

This work reports the phase-change behavior and thermal stability of doped GeSbTe/GeSbTe bilayers. We prepared the bilayers using RF sputtering, and annealed them at annealing temperature ranging from $100^{\circ}C$ to $400^{\circ}C$. The sheet resistance of the bilayer decreased and saturated with increasing annealing temperature, and the saturated value was close to that of pure GeSbTe film. The surface of the bilayer roughened at $400^{\circ}C$, which corresponds to the surface roughening of doped GeSbTe film. Mixed phases of face-centered cubic and hexagonal close-packed crystalline structures were identified in the bilayers annealed at elevated temperature. These results indicate that the phase-change behavior of the bilayer depends on the concurrent phase-transitions of the two GeSbTe-based films. The dopants in the doped GeSbTe film were diffused out at annealing temperatures of $300^{\circ}C$ or higher, which implies that the thermal stability of the bilayer should be considered for its application in phase-change electronic devices.

• 설비공학논문집
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• 제12권2호
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• pp.189-199
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• 2000

This paper investigates the thermodynamic performance of latent heat thermal energy storage system using two phase change materials(2-PCM system). The thermodynamic merit of using 2-PCM is clear in terms of exergetic efficiency, which is substantially higher than that of 1-PCM system. Optimum phase change temperature to maximize the exergetic efficiency exists for each case. The heat transfer area ratio of high temperature storage unit, X, becomes another important parameter for 2-PCM system if the phase change temperatures of given materials are different from those of optimum conditions. It is a good approximation for X$_{opt}$ to be 0.5 when optimum phase change temperatures are used. Otherwise X$_{opt}$ is determined differently as a function of given phase change temperatures.res.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.80-81
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a sample of PRAM with thermal protected layer. We have investigated the phase transition behaviors in function of process factor including thermal protect layer. As a result, we have observed that set voltage and duration of protect layer are more improved than no protect layer.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.24-27
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• 2003

We have been investigated phase-change with temperature and electric field in chalcogenide Ge$_2$Sb$_2$Te$\sub$5/ thin film. T$\sub$c/(crystallization temperature) is confirmed by measuring the resistance with the varying temperature on the hotplate. We have measured I-V characteristics with Ge$_2$Sb$_2$Te$\sub$5/ chalcogenide thin film. It is compared with I-V characteristics after impress the variable pulse. The pulse has variable height and duration.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1426-1427
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• 2006

Chalcogenide based phase-change memory has a high capability and potential for the next generation nonvolatile memory device. Fast writing speed, low writing voltage, high sensing margin, low power consume and long cycle of read/write repeatability are also good advantages of nonvolatile phase-change memory. We have been investigated the new material for the phase-change memory. Its composition is consists of chalcogenide $Ge_{1}Se_{1}Te_2$ material. We made this new material to solve problems of conventional phase-change memory which has disadvantage of high power consume and high writing voltage. In the present work, we are manufactured $Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}$ and $Ge_{2}Sb_{2}Te_{5}/Ge_{1}Se_{1}Te_{2}/Ge_{2}Sb_{2}Te_{5}$ sandwich triple layer structure devices are manufactured to investigate its electrical properties. Through the present work, we are willing to ensure a potential of substitutional method to overcome a crystallization problem on PRAM device.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.118-119
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• 2006

In the present work, we investigate the basic physical and thermal properties and electrical resistance change due to phase change in chalcogenide-based $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films. The phase transition from amorphous to crystalline states, and vice versa, of $Ge_1Se_1Te_2$ and $Ge_2Se_2Te_5$ thin films by applying electrical pulses have been studied. The reversible phase transition between the amorphous and crystalline states, which is accompanied by a considerable change in electrical resistivity, is exploited as means to store bits of information.

• 한국가시화정보학회지
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• 제21권2호
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• pp.34-45
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• 2023

When lithium-ion batteries operate out of the proper temperature range, their performance can be significantly degraded and safety issues such as thermal runaway can occur. Therefore, battery thermal management systems are widely researched to maintain the temperature of Li-ion battery cells within the proper temperature range during the charging and discharging process. This study investigates the cooling performance and isothermal maintenance of cooling materials by measuring the surface temperature of a battery cell with or without cooling materials, such as silicone oil, thermal adhesive, and phase change materials during discharge process of battery by the experimental and numerical analysis. As a result of the experiment, the battery pack filled with phase change material showed a temperature reduction of 47.4 ℃ compared to the case of natural convection. It proves the advanced utility of the cooling unit using phase change material that is suitable for use in battery thermal management systems.