• Korean Journal of Metals and Materials
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• v.46 no.12
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• pp.771-779
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• 2008

An effective way of increasing the strength and fracture toughness of reactor pressure vessel steels is to change the material specification from that of Mn-Mo-Ni low alloy steel(SA508 Gr.3) to Ni-Mo-Cr low alloy steel(SA508 Gr.4N). In this study, we evaluate the effects of alloying elements on the microstructural characteristics of Ni-Mo-Cr low alloy steel. The changes in the stable phase of the SA508 Gr.4N low alloy steel with alloying elements were evaluated by means of a thermodynamic calculation conducted with the software ThermoCalc. The changes were then compared with the observed microstructural results. The calculation of Ni-Mo-Cr low alloy steels confirms that the ferrite formation temperature decreases as the Ni content increases because of the austenite stabilization effect. Consequently, in the microscopic observation, the lath martensitic structure becomes finer as the Ni content increases. However, Ni does not affect the carbide phases such as $M_{23}C_6 $ and $M_7C_3$. When the Cr content decreases, the carbide phases become unstable and carbide coarsening can be observed. With an increase in the Mo content, the $M_2C$ phase becomes stable instead of the $M_7C_3$ phase. This behavior is also observed in TEM. From the calculation results and the observation results of the microstructure, the thermodynamic calculation can be used to predict the precipitation behavior.

• Nuclear Engineering and Technology
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• v.52 no.2
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• pp.344-351
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• 2020

AgInCd alloy is widely used as neutron absorber in nuclear reactors. However, the AgInCd control rods may fail during service due to the irradiation swelling. In the present study, a calculational method is proposed to calculate the composition change of the AgInCd absorber. Calculated results show that neutron fluence has significant impact on the chemical compositions. Ag and In contents gradually decrease while Cd and Sn conversely increases from the center to the rim of AgInCd absorber due to the depression of neutron flux. The composition change at the surface is higher almost two times than that at the center. Based on the calculated compositions, six simulated AgInCdSn alloys were prepared and examined. With the increase of Cd and Sn, the simulated AgInCdSn alloys transform from a single fcc phase into the mixed fcc and hcp phases, and finally into the single hcp phase. The atomic volume of the hcp phase is obviously larger than the fcc phase. The fcc-hcp transformation results in considerable volume swelling of the AgInCd absorber. Moreover, the lattice parameters of the fcc and hcp phases gradually increase with Cd and Sn contents, which also can induce small volume swelling.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.699-705
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• 1995

Effect of the grain boundary phases in Si$_3$N$_4$ ceramics on the fracture tonghness has been investigated. The Si$_3$N$_4$-Y$_2$O$_3$-SiO$_2$, (YS) and Si$_3$N$_4$-Y$_2$O$_3$-Al$_2$O$_3$(YA) systems were Can/HIP treated at 1750$^{\circ}C$ and then heat-treated at 1800∼2000$^{\circ}C$. The fracture toughness of the YA system, the grain boundary phase was only glass phase after heat-treatement, was increased. That of the YS system, however, the grain boundary phase was changed from crystalline and glass to glass phase after the heat -treatement above 1900$^{\circ}C$, was abruptly decreased. The reason of the sudden drop of the fracture toughness of the YS system was believed that the change of the grain boundary phases from crystalline and glass to glass phase effected un the fracture behavior.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.115-118
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semoconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline stale are assigned to binary states. AST(AsSbTe) used to phase change material by applying electical pulses. Thickness of AST chalcogenide thin film have about 100nm. Electrodes are made of ITO and Al. $T_c$(Crystallization temperature) of AST system is lower than that of the GST(GeSbTe) system, so that the current pulse width of crystallization process can be decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• Current Applied Physics
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• v.18 no.11
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• pp.1289-1293
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• 2018

The influence of crystallization treatment on the structure, magnetic properties and magnetocaloric effect of $Gd_{71}Ni_{29}$ melt-spun ribbons has been investigated in detail. Annealing of the melt-spun samples at 610 K for 30 min, a majority phase with a $Fe_3C$-type orthorhombic structure (space group, Pnma) and a minority phase with a CrB-type orthorhombic structure (space group, Cmcm) were obtained in the amorphous matrix. The amorphous melt-spun ribbons undergo a second-order ferromagnetic to paramagnetic phase transition at 122 K. For the annealed samples, two magnetic phase transitions caused by amorphous matrix and $Gd_3Ni$ phases occur at 82 and 100 K, respectively. The maximum magnetic entropy change $(-{\Delta}S_M)^{max}$ is $9.0J/(kg{\cdot}K)$ (5T) at 122 K for the melt-spun ribbons. The values of $(-{\Delta}S_M)^{max}$ in annealed ribbons are 1.0 and $5.7J/(kg{\cdot}K)$, corresponding to the two adjacent magnetic transitions.

• Journal of Korea Foundry Society
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• v.17 no.6
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• pp.592-597
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• 1997

The microstructure and tensile properties of Mg-Zn-Ca and Mg-Zn-Mn-Ca alloys have been investigated. The alloys were obtained by melting in a low carbon crucible coated with boron nitride under an Ar gas atmosphere to prevent oxidation and combustion. The Mg alloy melt was cast into the metallic mold at room temperature, and cooling part was located at the bottom of mold. The phase formed during solidification of the Mg-Zn-(Mn) alloys containing 0.5%Ca is $Ca_2Mg_6Zn_3$. The yield strength and ultimate tensile strength of the alloys increased with increasing Zn content, but the ductility did not change with increasing Zn content. The addition of Mn improves the yield strength and ultimate tensile strength of the alloys, but the ductility did not change. Tensile fracture of the alloys revealed brittle failure, with cracking along the $Ca_2Mg_6Zn_3$ phase. The variation of stress with strain obeyed the relationship of the ${\sigma}=K{\varepsilon}^n$.

• Journal of Institute of Convergence Technology
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• v.4 no.2
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• pp.51-54
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• 2014

Energy storage not only reduces the mismatch between supply and demand but also improves the performance and reliability of energy systems. The different forms of energy that can be stored, including mechanical, electrical and thermal energy. Phase change materials (PCM) are latent heat storage materials. A large number of phase change materials (organic, inorganic and eutectic) are available in any required temperature range. We concentrated on eutectic materials and made a eutectic by mixing urea and choline chloride. Heat capacity ($C_p$) is one of the most important properties to be considered when a process is developed using the eutectic and currently DSC (Differential Scanning Calorimetry) has been proved as an effective technique to measure the heat capacity. This study focused on measuring heat capacity ($C_p$) of the mixing urea and choline chloride by DSC.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.9
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• pp.614-619
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• 2010

Recently, a problem related to the thermal management in portable electronic and telecommunication devices is becoming issued. That is due to the trend of a slimness of the devices, so it is not easy to find the optimal thermal management solution for the devices. From now on, a pressed circular type cooling device has been mainly used, however the cooling device with thin thickness is becoming needed by the inner space constraint of the applications. In the present study, the silicon flat plate type cooling device with the separated vapor and liquid flow path was designed and fabricated. The normal isothermal characteristics created by vapor-liquid phase change was confirmed through the experimental study. The cooling device with 70 mm of total length showed 6.8 W of the heat transfer rate within the range of $4{\sim}5^{\circ}C/W$ of thermal resistance. In the future, it will be possible to develop the commercialized cooling device by revising the fabrication process and enhancing the thermal performance of the silicon and glass cooling device.