• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.826-829
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• 2006

In order to increase the transmittance of panel, in process of FFS TFT-LCD, fine patterning process which is adopted to the optimum passivation(PVX) hole was applied fine metal line patterning process and was made with optimum efficiency of liquid crystal by using space/bar size control of pixel electrode. We fabricated 2.03" mobile FFS devices with fine patterning process. Further, this technology will be applied to the basis of other process for higher PPI or higher aperture ratio technology.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.1
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• pp.116-122
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• 2012

The purpose of this study is on the development of 3-D conductive pattern fabrication system using laser. For development 3-D direct patterning system, we used the dynamic focusing, the laser power stabilizer and the auto aligning techniques. These technologies are already used commercially. However operation and control integrated system for 3-D direct patterning are not yet developed. The objective of this paper is to introduce laser direct structuring and develop the operating and integration system. Also we implemented new application of laser direct structuring.

• Journal of Biomedical Engineering Research
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• v.30 no.2
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• pp.103-112
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• 2009

Neuron-on-a-Chip technology is based on advanced neuronal culture technique, surface micropatterning, microelectrode array technology, and multi-dimensional data analysis techniques. The combination of these techniques allowed us to design and analyze live biological neural networks in vitro using real neurons. In this review article, two underlying technologies are reviewed: Microelectrode array technology and Neuronal patterning technology. There are new opportunities in the fusion of these technologies to apply them in neurobiology, neuroscience, neural prostheses, and cell-based biosensor areas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.303-303
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• 2007

Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

• Journal of Information Display
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• v.7 no.3
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• pp.1-4
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• 2006

2.22-inch qVGA $(240{\times}320)$ amorphous silicon thin film transistor liquid active matrix crystal display (a-Si TFT-AMLCD) panel has been successfully demonstrated employing a 2.5 um fine-patterning technology by a wet etch process. Higher resolution 2.22-inch qVGA LCD panel with an aperture ratio of 58% can be fabricated as the 2.5 um fine pattern formation technique is integrated with high thermal photo-resist (PR) development. In addition, a novel concept of unique a-Si TFT process architecture, which is advantageous in terms of reliability, was proposed in the fabrication of 2.22-inch qVGA LCD panel. Overall results show that the 2.5 um fine-patterning is a considerably significant technology to obtain higher aperture ratio for higher resolution a-Si TFT-LCD panel realization.

• Journal of the Korean Magnetics Society
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• v.17 no.4
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• pp.178-181
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• 2007

Electron beam lithography has been studied as a next-generation lithography technology instead of photo lithography for ULSI semiconductor devices. In this work, we have made a low-energy electron beam lithography system based on the microcolumn and investigated the dependence of the pattern thickness on the energies and dose concentration of the electron beam. We have also demonstrated the potential of low-energy lithography by achieving 100 nm-$SiO_2$ thin film patterning.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1340_1341
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• 2009

In this report, high-resolution metal electrode patterning is demonstrated by using selective surface treatment and dip casting for low-cost printed electronic applications. On hydrophobic octadecyltrichlorosilane treated $SiO_2$ surface, deep UV irradiation was performed through a patterned quartz photomask to selectively control the surface energy of the $SiO_2$ layer. The deep UV irradiated region becomes hydrophilic and by dipping into Ag nano-ink, Ag patterns were formed on the surface. Using this patterning technique, line patterns and dot arrays having less than $10{\mu}m$ pitch were fabricated.

• Macromolecular Research
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• v.12 no.3
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• pp.290-292
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• 2004

Multimode channel waveguides were fabricated using a direct UV patterning technology from thick films deposited by the one-step dip-coating of an organic/inorganic hybrid material (ORMOCER(equation omitted). The core size of the covered ridge waveguide was 43${\times}$51 $\mu\textrm{m}$$^2$; the waveguides can be readily prepared for multimode applications by direct UV patterning. The waveguides exhibited smooth surface profiles and a low optical loss of 0.07 ㏈/cm at the most important wavelength (850nm) used for optical interconnects.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.76-76
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• 2007

Several kinds of photo-chromic polymers containing push-pull structure were synthesized and investigated on optical patterning by photo-induced surface relief gratings (SRG) technique. The azobenzene segment was introduced as a functional group for a photo-triggered tran-cis isomerization. Consequently, we have fabricated micro-size regular pattern by one-step process without photo-mask.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.30-37
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• 2005

We present an air bridge type electrode system with tunable electrode distance for detecting electroactive biomolecules. It is known that the narrower gap between electrode fingers, the higher sensitivity in IDA (interdigitated array) electrode. In previous researches on IDA electrode, narrower patterning required much precise and expensive equipment as the gap goes down to nanometer scale. In this paper, an improved method is suggested to replace nano gap pattering with downsizing electrode distance and showed that the patterning can be replaced by thickness control using metal deposition methods, such as electroplating or metal sputtering. The air bridge type electrode was completed by the following procedures: gold patterning for lower electrode, copper electroplating, gold deposition for upper electrode, photoresist patterning for gold film support, and copper etching for space formation. The thickness of copper electroplating is the distance between upper and lower electrodes. Because the growth rate of electroplating is $0.5{\mu}m\;min^{-1}$, the distance is tunable up to hundreds of nanometers. Completed electrodes on the same wafer had $5{\mu}m$ electrode distance. The gaps between fingers are 10, 20, 30, and $40{\mu}m$ and the widths of fingers are 10, 20, 30, 40, and $50{\mu}m$. The air bridge type electrode system showed better sensitivity than planar electrode.