• 제목/요약/키워드: patterned substrate

검색결과 312건 처리시간 0.028초

패턴화된 사파이어 기판 위에 증착된 AlN 버퍼층 박막의 에피층 구조의 광학적 특성에 대한 영향 (Effects of AlN buffer layer on optical properties of epitaxial layer structure deposited on patterned sapphire substrate)

  • 박경욱;윤영훈
    • 한국결정성장학회지
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    • 제30권1호
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    • pp.1-6
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    • 2020
  • 본 연구에서는 패턴화된 사파이어 기판 위에 HVPE(Hydride Vapor Phase Epitaxy System) 법에 의해 50 nm 두께의 AlN thin film을 증착한 뒤, 에피층 구조가 MO CVD에서 성장되었다. AlN 버퍼층 박막의 표면형상이 SEM, AFM에 의해서, 에피층 구조의 GaN 박막의 결정성은 X-선 rocking curve에 의해 분석되었다. 패턴화된 사파이어 기판 위에 증착된 GaN 박막은, 사파이어 기판 위에 증착된 GaN 박막의 경우보다 XRD 피크 세기가 다소 높은 결과를 나타냈다. AFM 표면 형상에서 사파이어 기판 위에 AlN 박막이 증착된 경우, GaN 에피층 박막의 p-side 쪽의 v-pit 밀도가 상대적으로 낮았으며, 결함밀도가 낮게 관찰되었다. 또한, AlN 버퍼층이 증착된 에피층 구조는 AlN 박막이 없는 에피층의 광출력에 비해 높은 값을 나타냈다.

TCO 응용을 위한 패턴된 기판위에 증착된 AZO 박막의 특성 연구 (Conformal coating of Al-doped ZnO thin film on micro-column patterned substrate for TCO)

  • 최미경;안철현;공보현;조형균
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.28-28
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    • 2009
  • Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

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고분자 기판 상에 Rubber-stamp-printing 방법으로 제작한 유기박막 트랜지스터에 관한 연구 (Rubber-stamp-printed Poly (3-hexylthiophene) organic field-effect transistor on a plastic substrate with high mobility)

  • 김영훈;문대규;한정인
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.164-168
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    • 2005
  • We report high performance poly (3-hexylthiophene) organic field-effect transistors fabricated on a plastic substrate. The polymer active channel layer was directly printed by the rubber stamp printing method with a pre-patterned elastomer stamp. As a result. organic transistors having average field-effect mobility of 0.079 $cm^2/Vs$ and on/off ratio of $10^4{\sim}10^5$ were realized on a plastic substrate. Also, through the investigation of the molecular ordering of rubber-stamp-printed poly (3-hexylthiophene) films using synchrotron grazing-incidence X-ray diffraction measurements, the films were found to have edge-on structure which is favorable in realizing high performance organic transistors.

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Emission Properties of Selectively Grown Carbon Nanotubes

  • Han, Jae-Hee;Kim, Do-Yoon;Berdinsky, Alexander S.;Yoo, Ji-Beom;Park, Chong-Yun;Choi, Jin-Ju;Jung, Tae-Won;Han, In-Taek;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.459-461
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    • 2004
  • Field-emission (FE) characteristics of different photolithographically patterned carbon nanotubes (CNTs) films have been studied. The total FE current is the highest value [2.8 mA (${\sim}$106 mA/$cm^2$) at 7.5 V/${\mu}m$] in patterned CNTs film with the window size of 60 ${\mu}m$ ${\sim}$ 60 ${\mu}m$ and the spacing of 120 ${\mu}m$. It was found that the total widow area is more important factor for the total FE current than the total window length. The contact resistance between CNTs and substrate would be a crucial factor for detachment of CNTs from the substrate.

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나노패턴된 기판 위에서의 그래핀의 비등방성 전자 수송 특성 (Anisotropic Electronic Transport of Graphene on a Nano-Patterned Substrate)

  • 칼릴 하피츠;켈렉시 오즈구르;노화용;시에 야홍
    • 한국진공학회지
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    • 제21권5호
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    • pp.279-285
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    • 2012
  • 주기적인 나노트랜치 패턴이 있는 기판 위에 놓인 CVD 그래핀의 전도특성을 측정하였다. 나노트랜치에 대해 평행한 방향과 수직한 방향 사이에 전도특성의 큰 비등방성을 발견하였다. 전기 전도의 방향이 나노트랜치에 수직한 경우, 약한 한곳모임의 특성에 있어서도 큰 차이점이 발견되었는데, 이는 퍼텐셜 변조에 의해 생겨나는 전하밀도의 비균일성에 의해 생겨나는 것으로 해석된다.

Control of Nanospacing in TiO2 Nanowire Array Using Electron Beam Lithography

  • Yun, Young-Shik;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.430.1-430.1
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    • 2014
  • According to advanced nanotechnology in the field of biomedical engineering, many studies of the interaction between topography of surfaces and cellular responses have been focused on nanostructure. In order to investigate this interaction, it is essential to make well-controlled nanostructures. Electron beam lithography (EBL) have been considered the most typical processes to fabricate and control nano-scale patterns. In this work, $TiO_2$ nanowire array was fabricated with hybrid process (top-down and bottom-up processes). Nanodot arrays were patterned on the substrate by EBL process (top-down). In order to control the spacing between nanodots, we optimized the EBL process using Poly(methyl methacrylate) (PMMA) as an electron beam resist. Metal lift-off was used to transfer the spacing-controlled nanodots as a seed pattern of $TiO_2$ nanowire array. Au or Sn nanodots which play an important role for catalyst using Vapor-Liquid-Solid (VLS) method were patterned on the substrate through the lift-off process. Then, the sample was placed in the tube furnace and heated at the synthesis temperature. After heat treatment, $TiO_2$ nanowire array was fabricated from the nanodots through VLS method (bottom-up). These results of spacing-controlled nanowire arrays will be used to study the interaction between nanostructures and cellular responses in our next steps.

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PDMS 쿠션을 갖는 Si 몰드에 의한 핫엠보싱 공정에서의 4 인치 웨이퍼 스케일 전사성 향상 (4 Inch Wafer-Scale Replicability Enhancement in Hot Embossing by using PDMS-Cushioned Si Mold)

  • 김흥규;고영배;강정진;허영무
    • 한국정밀공학회지
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    • 제23권8호
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    • pp.178-184
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    • 2006
  • Hot embossing is to fabricate desired pattern on the polymer substrate by pressing the patterned mold against the substrate which is heated above the glass transition temperature, and it is a high throughput fabrication method for bio chip, optical microstructure, etc. due to the simultaneous large area patterning. However, the bad pattern fidelity in large area patterning is one of the obstacles to applying the hot embossing technology for mass production. In the present study, PDMS pad was used as a cushion on the backside of the micro-patterned 4 inch Si mold to improve the pattern fidelity over the 4 inch PMMA sheet by increasing the conformal contact between the Si mold and the PMMA sheet. The pattern replicability improvement over 4 inch wafer scale was evaluated by comparing the replicated pattern height and depth for PDMS-cushioned Si mold against the rigid Si mold without PDMS cushion.

국부적 양극산화 기술 동향 (Technological Trends in a local anodization)

  • 강광모;최수민;나윤채
    • 한국표면공학회지
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    • 제56권2호
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    • pp.115-124
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    • 2023
  • Anodization is an electrochemical process that electrochemically converts a metal surface into an oxide layer, resulting in enhanced corrosion resistance, wear resistance, and improved aesthetic appearance. Local anodization, also known as selective anodization, is a modified process that enables specific regions or patterns on the metal surface to undergo anodization instead of the entire surface. Several methods have been attempted to produce oxide layers via localized anodic oxidation, such as using a mask or pre-patterned substrate. However, these methods are often intricate, time-consuming, and costly. Conversely, the direct writing or patterning approach is a more straightforward and efficient way to fabricate the oxide layers. This review paper intends to enhance our comprehension of local anodization and its potential applications in various fields, including the development of nanotechnologies. The application of anodization is promising in surface engineering, where the anodic oxide layer serves as a protective coating for metals or modifies the surface properties of materials. Furthermore, anodic oxidation can create micro- and nano-scale patterns on metal surfaces. Overall, the development of efficient and cost-effective anodic oxidation methods is essential for the advancement of various industries and technologies.

Fabrication of Micro Patterned Fibronectin for Studying Adhesion and Alignment Behavior of Human Dermal Fibroblasts

  • Lee, Seung-Jae;Son, Young-Sook;Kim, Chun-Ho;Choi, Man-Soo
    • Macromolecular Research
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    • 제15권4호
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    • pp.348-356
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    • 2007
  • The aim of this study was to fabricate a submicro-and micro-patterned fibronectin coated wafer for a cell culture, which allows the positions and dimensions of the attached cells to be controlled. A replica molding was made into silicon via a photomask in quartz, using E-beam lithography, and then fabricated a polydimethylsiloxane stamp using the designed silicon mold. Hexadecanethiol $[HS(CH_2){_{15}}CH_3]$, adsorbed on the raised plateau of the surface of polydimethylsiloxane stamp, was contact-printed to form self-assembled monolayers (SAMs) of hexadecanethiolate on the surface of an Au-coated glass wafer. In order to form another SAM for control of the surface wafer properties, a hydrophilic hexa (ethylene glycol) terminated alkanethiol $[HS(CH_2){_{11}}(OCH_2CH_2){_6}OH]$ was also synthesized. The structural changes were confirmed using UV and $^1H-NMR$ spectroscopies. A SAM terminated in the hexa(ethylene glycol) groups was subsequently formed on the bare gold remaining on the surface of the Aucoated glass wafer. In order to aid the attachment of cells, fibronectin was adsorbed onto the resulting wafer, with the pattern formed on the gold-coated wafer confirmed using immunofluorescence staining against fibronectin. Fibronectin was adsorbed only onto the SAMs terminated in the methyl groups of the substrate. The hexa (ethylene glycol)-terminated regions resisted the adsorption of protein. Human dermal fibroblasts (P=4), obtained from newborn foreskin, only attached to the fibronectin-coated, methyl-terminated hydrophobic regions of the patterned SAMs. N-HDFs were more actively adhered, and spread in a pattern spacing below $14{\mu}m$, rather than above $17{\mu}m$, could easily migrate on the substrate containing spacing of $10{\mu}m$ or less between the strip lines.

저전압 구동용 전기스위치와 미러 어레이 응용을 위한 새로운 표면미세가공기술 (A New Surface Micromachining Technology for Low Voltage Actuated Switch and Mirror Arrays)

  • 박상준;이상우;김종팔;이상우;이상철;김성운;조동일
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 하계학술대회 논문집 G
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    • pp.2518-2520
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    • 1998
  • Silicon can be reactive ion etched (RIE) either isotropically or anisotropically. In this paper, a new micromachining technology combining these two etching characteristics is proposed. In the proposed method, the fabrication steps are as follows. First. a polysilicon layer, which is used as the bottom electrode, is deposited on the silicon wafer and patterned. Then the silicon substrate is etched anisotropically to a few micrometer depth that forms a cavity. Then an PECVD oxide layer is deposited to passivate the cavity side walls. The oxide layers at the top and bottom faces are removed while the passivation layers of the side walls are left. Then the substrate is etched again but in an isotropic etch condition to form a round trench with a larger radius than the anisotropic cavity. Then a sacrificial PECVD oxide layer is deposited and patterned. Then a polysilicon structural layer is deposited and patterned. This polysilicon layer forms a pivot structure of a rocker-arm. Finally, oxide sacrificial layers are etched away. This new micromachining technology is quite simpler than conventional method to fabricate joint structures, and the devices that are fabricated using this technology do not require a flexing structure for motion.

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