• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.11
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• pp.702-706
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• 2016

We demonstrated that self-separation FS-GaN (freestanding-GaN) was grown on MELO (maskless epitaxially lateral overgrowth) GaN template by horizontal HVPE (hydride vapor phase epitaxy). Before thick GaN grwoth, MELO GaN template was grown on patterned GaN template by MOCVD (metal organic chemical vapor deposition). The laterally overgrown GaN would consist of a continuous well coalesced layer. The mixed TDD (threading dislocation density) of seed and wing region were $8{\times}10^8cm^{-2}$ and $7{\times}10^7cm^{-2}$, respectively. After thick GaN grown by HVPE, the self-separation between thick GaN and sapphire substrate was generated at seed region. The regions of self-separation for FS-GaN and sapphire were observed by FE-SEM. Moreover, Raman results indicated that the compressive strain of seed and wing regions at FS-GaN substrate were slightly released compared to that of thick GaN grown on conventional GaN template. The optical properties of the FS-GaN substrate were examined by using PL (photoluminescence). The PL exhibited that donor bound exciton and donor acceptor pair were observed at low temperature. The effects on optical and structural properties of FS-GaN substrate have been discussed in detail.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.1-5
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• 2004

A multi-layer flexible substrate is composed of copper(Cu)/polyimide that are known as good electrical conductivity, and low dielectric constant, respectively. In this study. conductor line of $5{\mu}m$-pitch was successfully fabricated without non-uniform pattern shape by electroplating copper and coating polyimide on patterned stainless steel. For multi-layer flexible substrate, via holes were drilled by UV laser and filled with electroplating copper and tin. And then, the PI layer with vias and conductor lines was stripped from stainless steel substrate. The PI layers were laminated at once with careful alignment between layers. Solid state reaction between tin and copper during lamination formed the intermetallic compounds of $Cu_6Sn_5$($\eta$-phase) and $Cu_3Sn$($\epsilon$-Phase) and achieved a complete inter-connection by vertically positioning the plugged via holes on via pad. The via formation process has several advantages; such as better electrical property and lower cost than V type via and paste via.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.300-306
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• 2011

We report the surface distribution of metal (Ag, Au) nanoparticles grown on polarity-patterned ferroelectric substrates by photochemical reaction. Single crystal periodically polarity-patterned $LiNbO_3$(PPLN) was used as a ferroelectric substrate. The nanoparticles were grown by ultra-violet (UV) light exposure of the PPLN in the aqueous solutions including metas. The surface distribution of the grown nanoparticles were measured by atomic force microscopy and identification of the orientation of the polarity of the ferroelectric surface was performed by piezoelectric force microscopy. The Ag- and Au-nanoparticles grown on +z polarity regions are larger and denser than that on -z polarity regions. In particlur, the largest and denser Ag-nanoparticles were grwon on the polarity boundary regions of the PPLN while Au-nanoparticles were not specifically grown on the boundary regions. Thus, we found that the size and position of metal nanoparticles grown on ferroelectric surfaces can be controlled by UV-exposure time and polarity pattern structures. Also, we discuss the difference of the surface distribution of the metal nano-particles depending on the polarity of the ferroelectric surfaces in terms of surface band structures, reduced work fucntion, and inhomogeneous electric field distribution.

• Polymer(Korea)
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• v.31 no.2
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• pp.148-152
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• 2007

The prototype of color fitters for the liquid crystal displays (LCD) using cholesteric liquid crystal monomers was produced. Cholesteric liquid crystal is characterized by the unique optical features of selective reflection, which is due to the helical twisting structures of LCs comparable to the wavelength of the incident light under certain conditions of substrate treatment. In the results of the experiment, cholesteric films for red, green, and blue light reflections respectively were produced and the viewing angle dependence of these films were investigated. Reflective light of red and green films shifted to shorter wavelength regions as viewing angle becomes greater, but blue one shifted very little. Periodic micrometer-sized half-spherical photoresist formed by thermal reflow method after photo-lithography was patterned on glass substrates. The viewing angle dependence of reflective light colors of red, green, and blue films on the patterned substrates compared with those on no patterned substrates was investigated. We could confirm the dependences were much smaller on the patterned substrates by bare eyes and Lab-color coordination methods qualitatively.

• Particle and aerosol research
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• v.13 no.3
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• pp.111-118
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• 2017

Electrohydrodynamic (EHD) printing with the aid of strong electric fields can generate and pattern droplets that are smaller than droplets by other printing technologies. Conventional EHD printing has created two-dimensional (2D) patterns by moving its nozzle or a substrate in X and Y directions. In this study, we aimed to develop an EHD system that can create 2D patterns using a multielectrode array (MEA) without moving a nozzle or substrate. In particular, printing ink mixtures of biodegradable polymers and model dyes was patterned on a thin film made of another biodegradable polymer. Without movement of a nozzle and substrate, stable 2D patterning of minimum $6{\mu}m$ size over a range of about 1 mm away from the nozzle position was achieved by MEA control only. We also demonstrated the possibility of denser 2D pattering of the ink mixtures by moving a target substrate relative to MEA position.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.267-270
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• 2009

In the present investigation, we are newly developing a new forming process which can fabricate micro patterns on large-area polymeric substrates for high speed mass production. The key idea of the new process is to pressurize multiple vacuum-packed substrate-mold stacks above the glass transition temperature ($T_g$) of the polymeric substrates. The new process is thought to be promising micro-pattern fabrication technique in three aspects; firstly, isostatic pressing ensures the uniform micro-pattern replicating condition regardless of the substrate area. Secondly, the control of forming condition such as temperature and pressure can realize well-defined process condition exploited in the conventional hot embossing research field. Thirdly, multiple substrates can be patterned at the same time. A prototype forming machine for the new process was developed with the design consideration realizing the present idea. With a developed machine, micro prismatic array patterns with 50 um in size were successfully made on the $380{\times}300{\times}6\;mm$ PMMA plate.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.168-172
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• 1999

The 9 $\mu\textrm{m}$ GaN films on sapphire substrate were grown by Hydride vapor phase epitaxy. Dislocation density of these GaN films was measured by TEM. GaN film with crack free and mirror surface was directly grown on sapphire substrate. The dislocation density of this GaN film was $2{\times}10^9/cm^2$. The surface of GaN film on patterned GaN layer also presented a smooth mirror. But a part of GaN surface included holes because of incomplete coalescence. The dislocation density of GaN film above the mask region was lower than that in the window region. Especially, the dislocation density in the region between mask center and window region was close to dislocation free. The average dislocation density of ELO GaN was $8{\times}10^7/cm^2$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.4
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• pp.210-218
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• 2000

For the fabrication of $YBa_2Cu_3O_x$ thick film, a substrate of $Y_2BaCuO_5$ was fabricated by adding $CeO_2$ into $Y_2BaCuO_5$ and two types of doping materials added with binder material were prepared. Each doping material was patterned on $Y_2BaCuO_5$substrate by the screen printing method and then was annealed at the temperature with a few step. It could be observed by X-ray diffraction patterns and SEM photographs that through the diffusion process of the $Y_2BaCuO_5$ and each doping material, the $YBa_2Cu_3O_x$ phase was formed. And with n additive of $CeO_2$ the thickness of formed $YBa_2Cu_3O_x$decreased. From the experiment of current limiting on thick film, the sample with thiner thickness of $YBa_2Cu_3O_x$ showed the more effective characteristics of current limiting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.129-132
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• 2000

The PDP(Plasma Display Panel) barrier rib material on the glass substrate was patterned for fabrication of the PDP cell using Nd:YAG laser(1064 nm) which can generate the second(532 nm) and forth(266 nm) harmonic wave by HGM(harmonic generation modules). At a scan speed of 20 ${\mu}m/s$ with the second harmonic wave(532 nm) of Nd:YAG laser, the etching threshold laser fluence of the PDP material was 6.5 $mJ/cm^2$ and a sample(thickness = 180 ${\mu}m$) on the glass substrate was removed clearly at a laser fluence of 19.5 $mJ/cm^2$. In order to increase the throughput of the fabrication we divided a single-beam into multi-beams by using a metal mask between the sample and the focusing lens. As a result, 10 lines of PDP cell were formed by one laser beam scanning at a scan speed of 200 ${\mu}m/s$ and a laser fluence of 2.86 $J/cm^2$.

• Laser Solutions
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• v.17 no.3
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• pp.19-23
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• 2014

To directly engrave circuit-line patterns as wide as $6{\mu}m$ in a buildup film to be used as an IC substrate, we applied a projection ablation technique in which an 8 inch dielectric ($ZrO_2/SiO_2$) mask, a DPSS 355nm laser instead of an excimer laser, a ${\pi}$-shaper and a galvo scanner are used. With the ${\pi}$-shaper and a square aperture, the Gaussian beam from the laser is shaped into a square flap-top beam. The galvo scanner before the $f-{\theta}$ lens moves the flat-top beam ($115{\mu}m{\times}105{\mu}m$) across the 8 inch dielectric mask whose patterned area is $120mm{\times}120mm$. Based on the results of the previous research by the authors, the projection ratio was set at 3:1. Experiments showed that the average width and depth of the engraved patterns are $5.41{\mu}m$ and $7.30{\mu}m$, respectively.