• Korean Journal of Materials Research
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• v.17 no.5
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• pp.273-277
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• 2007

Vertically aligned Zinc Oxide rod arrays were grown by the self-assembly hydrothermal process on the GaN epitaxial layer which has a same lattice structure with ZnO. Zinc nitrate and DETA solutions are used in the hydrothermal process. The $(HfO_2)$ thin film was deposited on GaN and the patterning was made by the photolithography technique. The selective growth of ZnO rod was achieved with the patterned GaN substrate. The fabricated ZnO rods are single crystal, and have grown along hexagonal c-axis direction of (002) which is the same growth orientation of GaN epitaxial layer. The density and the size of ZnO rod can be controlled by the pattern. The optical property of ordered array of vertical ZnO rods will be discussed in the present work.

• Journal of information and communication convergence engineering
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• v.5 no.1
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• pp.42-44
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• 2007

The a-Si:H TFTs decreasing parasitic capacitance of source-drain is fabricated on glass. The structure of a-Si:H TFTs is inverted staggered. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr) $1500{\AA}$ under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photoresistor on gate electrode in sequence, respectively. The thickness of these, thin films is formed with a-SiN:H ($2000{\mu}m$), a-Si:H($2000{\mu}m$) and $n^+a-Si:H$ ($500{\mu}m$). We have deposited $n^+a-Si:H$, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the $n^+a-Si:H$ layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFTs decreasing parasitic capacitance of source-drain show drain current of $8{\mu}A$ at 20 gate voltages, $I_{on}/I_{off}$ ratio of ${\sim}10^8$ and $V_{th}$ of 4 volts.

• Journal of the Korean institute of surface engineering
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• v.52 no.6
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• pp.357-363
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• 2019

We investigated a synthesis yield and diameter distribution of single-walled carbon nanotubes (SWNTs) with respect to the growth position in a horizontal chemical vapor deposition (CVD) chamber. Thin films and line-patterned Fe films (0.1 nm thickness) were prepared onto ST-cut quartz substrates as catalyst to compare the growth behavior. The line-patterned samples showed higher growth density and parallel alignment than those of the thin film catalyst samples. In addition, line density of the aligned SWNTs at central region of the chamber was 7.7 tubes/㎛ and increased to 13.9 tubes/㎛ at rear region of the CVD chamber. We expect that the enhanced amount of thermally decomposed feedstock gas may contribute to the growth yield enhancement at the rear region. In addition, the lamina flow in the chamber also contribute to the perfect alignment of the SWNTs based on the value of gas velocity, Reynold number, and Knudsen coefficient we employed.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.59-64
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• 2019

This study investigates the optical characteristics of InGaN multiple quantum wells(MQWs) light emitting diodes(LEDs) on planar sapphire substrates(PSSs), nano-sized PSS(NPSS) and micro-sized PSS(MPSS). We obtain the results as the patterning size of the sapphire substrates approach the nanometer scale: The light from the back side of the device increases and the total light extraction becomes larger than the MPSS- and planar-LEDs. The experiment is conducted by Monte Carlo ray-tracing, which is regarded as one of the most suitable ways to simulate light propagation in LEDs. The results show fine consistency between simulation and measurement of the samples with different sized patterned substrates. Notably, light from the back side becomes larger in the NPSS LEDs. We strongly propose that the increase in the light intensity of NPSS LEDs is due to an abnormal optical distribution, which indicates an increase of extraction probability through NPSS.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.913-918
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• 2005

It is expected that the inkjet technology offers prospect for reliable and low cost manufacturing of FPD (Flat Panel Display). This inkjet technology also offers a more simplified manufacturing process for various part of the FPD than conventional process. For example, recently the novel manufacturing processes of color filter (C/F) in LCD, or RGB patterning in OLED by inkjet printing method have been developed. This elaborates will be considered as the precious point of manufacturing process for the mass production of enlarged-display panel with a low price. On this point of view, we would like to review the status of inkjet technology in FPD, with some results on forming micro line by inkjet patterning of suspension type silver nano ink as below. We have studied the inkjet patterning of synthesized aqueous silver nano-sol on interface-controlled ITO glass substrate. Furthermore, we designed the conductive ink for direct inkjet patterning on bare ITO glass substrate. The first, the highly concentrated polymeric dispersant-assisted silver nano sol was prepared. The high concentration of batch-synthesized silver nano sol was possible to 40 wt%. At the same time the particle size of silver nanoparticles was below $10{\sim}20nm$. The second, the synthesized silver nano sol was inkjet - patterned on ITO glass substrate. The connectivity and width of fine line depended largely on the wettability of silver nano sol on ITO glass substrate, which was controlled by surfactant. The relationship was understood by wetting angle. The line of silver electrode as fine as $50{\sim}100\;{\mu}m$ was successfully formed on ITO glass substrate. The last, the direct inkjet-patternable silver nano sol on bare ITO glass substrate was designed also.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.421-421
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• 2008

Generally, the polymer thick-film resistors for embedded organic or hybrid substrate are patterned by screen printing so that the accuracy of resistor pattern is not good and the tolerance of resistance is too high(${\pm}$20~30%). To reform these demerits, a method using Fodel$^{(R)}$ technology, which is the patterning method using a photosensitive resin to be developable by aqueous alkali-solution as a base polymer for thick-film pastes, was recently incorporated for the patterning of thermosetting thick-film resistor paste. Alkali-solution developable photosensitive resin system has a merit that the precise patterns can be obtained by UV exposure and aqueous development, so the essential point is to get the composition similar to PSR(photo solder resist) used for PCB process. In present research, we made the photopatternable resistor pastes using 8 kinds of epoxy acrylates and a conductive carbonblack (CDX-7055 Ultra), evaluated their developing performance, and then measured the resistance after final curing. To become developable by alkali-solution, epoxy acrylate oligomers with carboxyl group were prepared. Test coupons were fabricated by patterning copper foil on FR-4 CCL board, plating Ni/Au on the patterned copper electrode, applying the resistor paste on the board, exposing the applied paste to UV through Cr mask with resistor patterns, developing the exposed paste with aqueous alkali-solution (1wt% $Na_2CO_3$), drying the patterned paste at $80^{\circ}C$ oven, and then curing it at $200^{\circ}C$ during 1 hour. As a result, some test compositions couldn't be developed according to the kind of oligomer and, in the developed compositions, the measured resistance showed different results depending on the paste compositions though they had the same amount of carbonblack.

• Journal of Sensor Science and Technology
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• v.16 no.5
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• pp.325-330
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• 2007

For the application to optic devices, wafer level package including spacer with particular thickness according to optical design could be required. In these cases, the uniformity of spacer thickness is important for bonding strength and optical performance. Packaging process has to be performed at low temperature in order to prevent damage to devices fabricated before packaging. And if photosensitive material is used as spacer layer, size and shape of pattern and thickness of spacer can be easily controlled. This paper presents polymer bonding using thick, uniform and patterned spacing layer of SU-8 2100 photoresist for wafer level package. SU-8, negative photoresist, can be coated uniformly by spin coater and it is cured at $95^{\circ}C$ and bonded well near the temperature. It can be bonded to silicon well, patterned with high aspect ratio and easy to form thick layer due to its high viscosity. It is also mechanically strong, chemically resistive and thermally stable. But adhesion of SU-8 to glass is poor, and in the case of forming thick layer, SU-8 layer leans from the perpendicular due to imbalance to gravity. To solve leaning problem, the wafer rotating system was introduced. Imbalance to gravity of thick layer was cancelled out through rotating wafer during curing time. And depositing additional layer of gold onto glass could improve adhesion strength of SU-8 to glass. Conclusively, we established the coating condition for forming patterned SU-8 layer with $400{\mu}m$ of thickness and 3.25 % of uniformity through single coating. Also we improved tensile strength from hundreds kPa to maximum 9.43 MPa through depositing gold layer onto glass substrate.

• Journal of the Korean Vacuum Society
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• v.16 no.5
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• pp.366-370
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• 2007

Nano-scopic holes which are distributed densely and uniformly were fabricated on $SiO_2$ surface. Self-assembling resists were used to produce a layer of uniformly distributed parallel poly methyl methacrylate (PMMA) cylinders in a polystyrene (PS) matrix. The PMMA cylinders were degraded and removed by acetic acid rinsing. Subsequently, PS nanotemplates were fabricated. The patterned holes of PS template were approximately $8{\sim}30\;nm$ wide, 40 nm deep, and 60 nm apart. The porous PS template was used as a dry etching mask to transfer the pattern of PS template into the silicon oxide thin film during reactive ion etching (RIE) process. The sizes of the patterned holes on $SiO_2$ layer were $9{\sim}33\;nm$. After pattern transfer by RIE, uniformly distributed holes of which size were in the range of $6{\sim}22\;nm$ were fabricated on Si substrate. Sizes of the patterned holes were controllable by PMMA molecular weight.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.251-251
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• 2012

A lot of studies are undergoing on the magneto-optical (MO) properties of patterned magnetic systems for the reason that they have potential application to information technology such as ultrahigh-speed computing. Moreover, they can be considered as the future candidates for high-density MO storage devices. Not only the technical aspects, but there have been also tremendous interests in studying their properties related to the fundamental physics. The MO Kerr-rotation effects (both in reflected and the diffracted modes) and the magnetic force microscopy (MFM) are very useful techniques to investigate the micromagnetic properties of such periodic structures. Hence, in this study, we report on the MO properties of bilayered Cobalt (Co)/ nickel (Ni) micro-patterned anti-dot arrays. Such a ferromagnetic structure was made by sequentially depositing co (40 nm)/Ni (5 nm) bilayer on a Si substrate. The anti-dot patterning with hole diameter of $1{\mu}m$ was done only on the upper Co layer using photolithography technique, while the Ni underlayer was kept uniform. The longitudinal Kerr rotation (LKR) of the zeroth- and the first-order diffracted beams were measured at an incidence of $30^{\circ}$ by using a photoelastic modulator method. The external magnetic field was applied perpendicularly to the reflected and the diffracted beams using an electromagnet capable of a maximum field of ${\pm}5$ kOe. Significantly, it was observed that the LKR of the first-order diffracted beam is nearly 4 times larger than that of the zeroth-order beam. The simulated results for the hysteresis loops matched qualitatively well with the experimentally obtained ones. In conjunction with the LKR, we also investigated the magnetic-domain structure by using a MFM system, which were analyzed to elucidate the origin of the enhanced MO rotation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1047-1055
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• 2006

We patterned nano-width lines on a super hard bulk diamond substrate by varying the ion beam current and ion beam sources with a dual beam field ion beam (FIB). In addition, we successfully fabricated two-dimensional nano patterns and three-dimensional nano plate modules. We prepared nano lines on a diamond and a silicon substrate at the beam condition of 30 kV, 10 pA $\sim$ 5 nA with $Ga^+$ ion and $H_2O$ assisted ion sources. We measured each of the line-width, line-depth, etched line profiles, etch rate, and aspect ratio, and then compared them. We confirmed that nano patterning was possible on both a bulk diamond and a silicon substrate. The etch rate of $H_2O$ source can be enhanced about two times than that of Ga source. The width of patterns on a diamond was smaller than that on a silicon substrate at the same ion beam power The sub-100 nm patterns on a diamond were made under the charge neutralization mode to prevent charge accumulation. We successfully made a two-dimensional, 240 nm-width text of the 300-lettered Lord's Prayer on a gem diamond with 30 kV-30 pA FIB. The patterned text image was readable with a scanning electron microscope. Moreover, three dimensional nano-thick plate module fabrication was made successfully with an FIB and a platinum deposition, and electron energy loss spectrum (EELS) analysis was easily performed with the prepared nano plate module.