• Corrosion Science and Technology
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• v.6 no.6
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• pp.311-315
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• 2007

The anodic polarization behavior of equiatomic TiNi shape memory alloy with pure titanium as a reference material was investigated by means of open circuit potential measurement and potentiodynamic polarization technique. And the structure of passive films on TiNi intermetallic compounds was also conducted using AES and ESCA. While the dissolved Ni(II) ion did not affect the dissolution rate and passivation of TiNi alloy, the dissolved Ti(III) ion was oxidated to Ti(IV) ion on passivated TiNi surface at passivation potential. It has also been found that the Ti(IV) ion increases the steady state potential, and passivates TiNi alloy at a limited concentration of Ti(IV) ion. The analysis by AES showed that passive film of TiNi alloy was composed of titanium oxide and nickel oxide, and the content of titanium was three times higher than that of nickel in outer side of passive film. According to the ESCA analysis, the passive film was composed of $TiO_2$ and NiO. It seems reasonable to suppose that NiO could act as unstabilizer to the oxide film and could be dissolved preferentially. Therefore, nickel oxide contained in the passive film may promote the dissolution of the film, and it could be explained the reason of higher pitting susceptibility of TiNi alloy than pure Ti.

• Journal of the Korean Chemical Society
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• v.61 no.6
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• pp.320-327
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• 2017

In a borate buffer solution, the growth kinetics and the electronic properties of passive film on cobalt were investigated, using the potentiodynamic method, chronoamperometry, and single-frequency electrochemical impedance spectroscopy. It was found out that the unstable passive film ($Co(OH)_2$) and CoO of Co formed in the low electrode potential changes to $Co_3O_4$ and CoOOH while the electrode potential increases. And the composition of the passive films was varied against the applied potential and oxidation time. The oxide film formed during the passivation process of cobalt has showed the electronic properties of p-type semiconductor, which follow from the Mott-Schottky equation.

• Korean Journal of Materials Research
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• v.25 no.5
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• pp.233-237
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• 2015

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) $Al_2O_3$. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect $Al_2O_3$ passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD $Al_2O_3$ film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. $Al_2O_3$/SiON stacks coated at $400^{\circ}C$ showed higher lifetime values in the as-stacked state. In contrast, a high quality $Al_2O_3$/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of $200^{\circ}C$ after the firing process. The best lifetime was achieved with stack films fired at $850^{\circ}C$. These results demonstrated the potential of the $Al_2O_3/SiON$ passivated layer for crystalline silicon solar cells.

• Korean Journal of Materials Research
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• v.29 no.1
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• pp.1-6
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• 2019

Recent industrialization has led to a high demand for the use of fossil fuels. Therefore, the need for producing hydrogen and its utilization is essential for a sustainable society. For an eco-friendly future technology, photoelectrochemical water splitting using solar energy has proven promising amongst many other candidates. With this technique, semiconductors can be used as photocatalysts to generate electrons by light absorption, resulting in the reduction of hydrogen ions. The photocatalysts must be chemically stable, economically inexpensive and be able to utilize a wide range of light. From this perspective, cuprous oxide($Cu_2O$) is a promising p-type semiconductor because of its appropriate band gap. However, a major hindrance to the use of $Cu_2O$ is its instability at the potential in which hydrogen ion is reduced. In this study, gold is used as a bottom electrode during electrodeposition to obtain a preferential growth along the (111) plane of $Cu_2O$ while imperfections of the $Cu_2O$ thin films are removed. This study investigates the photoelectrochemical properties of $Cu_2O$. However, severe photo-induced corrosion impedes the use of $Cu_2O$ as a photoelectrode. Two candidates, $TiO_2$ and $SnO_2$, are selected for the passivation layer on $Cu_2O$ by by considering the Pourbaix-diagram. $TiO_2$ and $SnO_2$ passivation layers are deposited by atomic layer deposition(ALD) and a sputtering process, respectively. The investigation of the photoelectrochemical properties confirmed that $SnO_2$ is a good passivation layer for $Cu_2O$.

• Corrosion Science and Technology
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• v.12 no.1
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• pp.34-39
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• 2013

In this study, the effect of niobium addition on the passivation behavior of Ti alloys in NaCl solution was investigated using various electrochemical methods. An ${\alpha}$-phase in Ti alloy was transformed into a ${\beta}$-phase and martensite structure decreased as Nb content increased. The corrosion and passivation current density($+300mV_{SCE}$) decreased as Nb content increased, and thereby a stable passive film was formed on the Ti alloy. Potential of Ti-xNb alloy in the passive region increased, whereas, current density decreased with time from results of potentiostatic and galvanostatic tests. Also, the corrosion morphology showed the smaller pits as Nb content increased. Consequently, Ti alloy contained high Nb content showed a good resistance to pitting corrosion in 0.9% NaCl solution.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.2
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• pp.69-73
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• 2008

This article shows that the susceptibility of the device pattern to thermal stress-induced damage has a strong dependence on its proximity to the device comer in semiconductor devices utilizing lead-on-chip (LOC) die attach technique. The result, as explained based on numerical calculation and experiment, indicateds that the stress-driven damage potential of the passivation layer is the highest at the device comer. Thus, the bonding pads, which are very susceptible to passivation damage, should be designed to be located along the central region rather than the peripheral region of the device.

• Corrosion Science and Technology
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• v.8 no.6
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• pp.209-216
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• 2009

In this study the effect of different surface finishing techniques on the pitting corrosion behaviour of a commercial 304 stainless steel alloy was investigated. Surface finishing methods were divided into two categories, i.e. mechanical and chemical. Mechanical treatment methods include power tooling such as grinding, emery paper brushing, stainless steel wire brushing and stainless steel shot blasting. Chemical treatment methods include chemical passivation (phosphoric acid, citric acid, nitric acid) and electro-cleaning (phosphoric acid and citric acid). Potentiodynamic polarization experiments were carried out in 3.5 wt. % NaCl solution at room temp. (20 $^{\circ}C$). The results showed that chemical treatment methods improved the corrosion resistance of stainless steel 304, measured in terms of pitting potential ($E_{pit}$). Corrosion resistance of the specimens was increased in the order of; electro-cleaning > manual passivation > mechanical cleaning. Surface of electro-cleaned specimens was smoother than rest of the surface treatment methods. Chrome content in chemically treated specimens was higher than in mechanically treated specimens as shown by EDX analysis.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.352-356
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• 2023

The integration of bioelectronic devices with the skin is a promising strategy for personalized healthcare monitoring and diagnostics. On-skin bioelectrodes hold great potential for the real-time tracking of physiological parameters. However, persistent challenges of stability and reliability have instigated exploration beyond conventional noble metals. This study focuses on the ionic passivation and oxidation dynamics of copper-based on-skin thin-film bioelectrodes. Through parylene chemical vapor deposition, we harness a controlled thin film of parylene insulation to counter the intrinsic susceptibility of copper to oxidation in the ionic environment. The results represent the relationship among the parylene insulation thickness, copper oxidation, and electrode impedance over temporal intervals. Comparative analyses indicate that the short-term stability of the copper electrode is comparable to that of the gold electrode. Therefore, we propose a cost-effective strategy for fabricating copper-based on-skin bioelectrodes by introducing enhanced ionic stability within a discernible operational timeframe. This study enriches our understanding of on-skin bioelectronics and affordable material choices for practical use in wearable healthcare devices.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.172-177
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• 1999

Graphite and carbonaceous materials showed an excellent capability as a negative electrode in Li-ion batteries because Li-ion can be intercalated and de-intercalated reversibly within most carbonaceous materials of layered structure. Also, the electrochemical potential of Li-intercalated carbon anode is almost identical with that of Li metal. In the present study, mesocarbon microbeads(MCMB) were used as anode electrode and its properties of charge/discharge and interfacial reaction with electrolyte were studied by Potentiostat/Galvanostat test, FT-IR analysis, XRD and SEM. The passivation film of solid-state was formed as the interface between electrode and electrolyte as the cell reaction began and, once formed, became thicker with repeated charge/discharge process. Also, the relationship between the passivation film formed at the electrode interface and storage capacity was discussed.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.96-105
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• 2021

Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se₂ (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In₂Se₃ film as a possible diffusion barrier layer because In₂Se₃ has no Zn component. It was found that an In₂Se₃ layer grown at 300℃ was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In₂Se₃ had a large potential barrier in the valence band at the In₂Se₃/CIGS interface. Therefore, In₂Se₃ passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.