• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.462-462
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• 2014

The effect of rear passivation for passivated emitter and rear cell (PERC) using ozone and H2O oxidant of atomic layer deposited (ALD) Al2O3 was studied by post-annealing in N2 and forming gas ambients. Rear surface of PERC solar cell was passivated by Al2O3 grown by ALD with ozone and H2O oxidant. Al2O3 grown by ALD with ozone oxidant has been known to have many advantages, such as lower interface defects, low leakage current density. Its passivation quality is better than Al2O3 with H2O. Al2O3 layer with 10 nm and 20 nm thickness was grown at $150^{\circ}C$ with ozone oxidant and at $250^{\circ}C$ with H2O oxidant. And then each samples were post-annealled at $450^{\circ}C$ in N2 ambients and at $850^{\circ}C$ in forming gas ambients. The passivation quality was investigated by measuring the minority carrier lifetime respectively. We examined atomic layer deposited Al2O3 such as growth rate, film density, thickness, negative fixed charge density at AlOx/Si interface, and reflectance. The influences of process temperature and heat treatment were investigated using Sinton (WCT-120) by Quasi-Steady State Photoconductance (QSSPC) mode. Ozone-based ALD Al2O3 film shows the best carrier lifetime at lower deposition temperature than H2O-based ALD.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.27-30
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• 2001

Electromigration Phenomena in Al-1%Si thin film interconnections under DC and PDC conditions were investigated. Thin film interconnections with $SiO_2$ and PSG/$SiO_2$ dielectric passivation layer were formed by a standard photolithography process method and test line lengths were 100, 400, 800, 1200, and 1600 $\mu\textrm{m}$. The current density of $1.19\times10^7\textrm{A/cm}^2$ was stressed in Al-1%Si thin film interconnections under DC condition. The current density of $1.19\times10^7\textrm{A/cm}^2$ was also applied under PDC condition at the frequency of 1 Hz with the duty factor of 0.5. The electromigration resistance of PSG/SiO2 dielectric passivation test line was stronger than $SiO_2$ dielectric passivation test line. The lifetime under PDC was 2-4 times longer than DC condition. As the thin film interconnection line increased, the lifetime decreased and saturated over the critical length. Failure patterns by an electromigration were dominated by void-induced electrical open and hillock-induced electrical short.

• Corrosion Science and Technology
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• v.17 no.4
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• pp.154-165
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• 2018

During the process of sulfur dioxide removal, flue gas desulfurization equipment provides a serious internal corrosion environment in creating sulfuric acid dew point corrosion. Therefore, the utilities must use the excellent corrosion resistance of steel desulfurization facilities in the atmosphere. Until now, the trend in developing anti-sulfuric acid steels was essentially the addition of Cu, in order to improve the corrosion resistance. The experimental alloy used in this study is Fe-0.03C-1.0Mn-0.3Si-0.15Ni-0.31Cu alloys to which Ru, Zn and Ta were added. In order to investigate the effect of $H_2SO_4$ concentration and the alloying elements, chemical and electrochemical corrosion tests were performed. In a low concentration of $H_2SO_4$ solution, the major factor affecting the corrosion rate of low alloy steels was the exchange current density for $H^+/H_2$ reaction, while in a high concentration of $H_2SO_4$ solution, the major factors were the thin and dense passive film and resulting passivation behavior. The alloying elements reducing the exchange current density in low concentration of $H_2SO_4$, and the alloying elements decreasing the passive current density in high concentration of $H_2SO_4$, together play an important role in determining the corrosion rate of Cu-bearing low alloy steels in a wide range of $H_2SO_4$ solution.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.98-99
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• 2014

질산산화법(nitric acid oxidation method)은 저온에서 안정적인 산화막을 형성하는 직접산화공정으로 azeotropic point(68 wt%)인 120도 이하의 온도에서 산화막을 형성한다. 120도에서 형성한 질산산화막은 CVD법으로 형성한 산화막 보다 낮은 누설전류밀도(leakage current density)를 나타낸다. 또한 질산의 농도가 증가함에 따라 형성한 산화막의 누설전류밀도가 감소하며, 이는 열산화법으로 형성한 산화막 보다 낮다. 질산산화의 낮은 누설전류밀도는 형성한 산화막의 높은 원자 밀도와 낮은 계면준위밀도에 의한 것으로 이 특성을 이용하여 게이트 절연막(gate insulator)과 태양전지의 passivation막으로 응용되고 있다.

• Journal of the Korean Institute of Gas
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• v.5 no.4 s.16
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• pp.33-39
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• 2001

This paper was studied on corrosion behavior of absorption refrigeration systems using $LiBr-H_2O$ working fluids. In the various concentration of lithium bromide solution, polarization test of SS 400, Cu(C1220T-OL) and Al-Ni bronze is carried out. And the corrosion behavior of materials forming absorption refrigeration systems is investigated. The main results are as following: 1) As concentration of lithium bromide solution increases, polarization resistance of materials of each kinds is low. And open circuit potential becomes less noble, the corrosion current density is high drained 2) Open circuit potential of SS 400 is less noble than that of Cu and Al-Ni bronze, corrosion current density of SS5 400 is high drained than that of Cu and Al-Ni bronze. 3) Anodic polarization of Cu and Al-Ni bronze in $62\%$ LiBr solution continues the active state. that of Cu and Al-Ni bronze in the natural sea water maintains the active state and the critical current for passivation appears.

• Transactions on Electrical and Electronic Materials
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• v.18 no.6
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• pp.316-319
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• 2017

A new approach to improving the electrical characteristics and optical response of a polysilicon-based metal-semiconductor-metal (MSM) photodetector is proposed. To understand the cause of current restriction in the MSM photodetector, modified trap mechanisms are suggested, which include interfacial electron traps at the metal/polysilicon interface and silicon dangling bonds between silicon crystallite grains. Those traps were passivated using hydrogen ion implantation with subsequent post-annealing. Photodetectors that were ion-implanted under optima conditions exhibited improved photoconductivity and reduced dark current instability, implying that the hydrogen bonds in the polysilicon influence the simultaneous decreases in the density of dangling bonds at grain boundaries and the trapped positive charges at the contact interface.

• Current Photovoltaic Research
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• v.7 no.4
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• pp.125-129
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• 2019

Recently, carrier-selective contact solar cells have attracted much interests because of its high efficiency with low recombination current density. In this study, we investigated the effect of phosphorus doped amorphous silicon layer's characteristics on the passivation properties of tunnel oxide passivated carrier-selective contact solar cells. We fabricated symmetric structure sample with poly-Si/SiOx/c-Si by deposition of phosphorus doped amorphous silicon layer on the silicon oxide with subsequent annealing and hydrogenation process. We varied deposition temperature, deposition thickness, and annealing conditions, and blistering, lifetime and passivation quality was evaluated. The result showed that blistering can be controlled by deposition temperature, and passivation quality can be improved by controlling annealing conditions. Finally, we achieved blistering-free electron carrier-selective contact with 730mV of i-Voc, and cell-like structure consisted of front boron emitter and rear passivated contact showed 682mV i-Voc.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.147-152
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• 2002

This paper was studied on corrosion of heat exchanger tube for absorption refrigeration machine. In the 62 % lithium bromide solution at $60^{\circ}C$, polarization test of Cu, Al-brass, 10 % cupro nickel(90-10 % Cu-Ni) and 30 % cupronickel(70-30 % Cu-Ni) tube was carried out. And polarization behavior, polarization resistance characteristics, open circuit potential, anodic polarization of heat exchanger tube for absorption refrigeration machine were considered. The main results are as following: The open circuit potential of Al-brass tube becomes less noble than that of Cu tube, corrosion current density of that becomes lower than Cu tube. The open circuit potential of cupronickel tube is more noble than that of Cu tube, corrosion current density of that is controlled than Cu tube. The passivation critical current of 30 % Cu-Ni tube is lower than that of 10 % Cu-Ni tube, potential of passive region of that is more wide than 10 % Cu-Ni tube.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.5
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.34-39
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• 2006

In high-voltage devices such as thyristor, beveling is mostly used junction termination method to reduce the surface electric field far below the bulk electric field and to expand the depletion region thus that breakdown occurs in the bulk of the device rather than at the surface. However, coating material used to protect the surface of the device contain so many charges which affect the electrical characteristics of the device. And device reliability is also affected by this charge. Therefore, it is needed to analyze the effect of surface charge on electrical characteristics of the device. In this paper, we analyzed the breakdown voltage and leakage current characteristics of the thyristor as a function of the amount of surface charge density. Two dimensional process simulator ATHENA and two-dimensional device simulator ATLAS is used to analyze the surface charge effects.