• Parasites, Hosts and Diseases
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• v.58 no.4
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• pp.461-466
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• 2020

Toxoplasma gondii is an obligate intracellular protozoan parasite that can invade various organs in the host body, including the central nervous system. Chronic intracranial T. gondii is known to be associated with neuroprotection against neurodegenerative diseases through interaction with host brain cells in various ways. The present study investigated the neuroprotective effects of chronic T. gondii infection in mice with cerebral ischemia experimentally produced by middle cerebral artery occlusion (MCAO) surgery. The neurobehavioral effects of cerebral ischemia were assessed by measurement of Garcia score and Rotarod behavior tests. The volume of brain ischemia was measured by triphenyltetrazolium chloride staining. The expression levels of related genes and proteins were determined. After cerebral ischemia, corrected infarction volume was significantly reduced in T. gondii infected mice, and their neurobehavioral function was significantly better than that of the uninfection control group. Chronic T. gondii infection induced the expression of hypoxia-inducible factor 1-alpha (HIF-1α) in the brain before MCAO. T. gondii infection also increased the expression of vascular endothelial growth factor after the cerebral ischemia. It is suggested that chronic intracerebral infection of T. gondii may be a potential preconditioning strategy to reduce neural deficits associated with cerebral ischemia and induce brain ischemic tolerance through the regulation of HIF-1α expression.

• Korean journal of applied entomology
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• v.52 no.3
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• pp.215-225
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• 2013

To assess the efficacy of nematicides for the control of plant-parasitic nematodes in fruit and vegetables fields, soil samples were collected from a cucumber field at Gongju; from strawberry fields at Buyeo, Nonsan, and Jinju; and from a melon field at Gocksung in Jeonnam Province, Korea. Plant-parasitic nematodes were separated from each soil sample and identified. The susceptibilities of the nematodes to abamectin 1.68% SC, cadusafos 3% GR, dazomet 98% GR, fosthiazate 30% SL and BA12011 SL were examined under laboratory and field conditions. The average population density of plant-parasitic nematodes was generally reduced after the treatment with nematicides; however, there was increase in the population of Pratylenchus spp. in soil after treatment with fosthiazate at Buyeo and Gocksung. Furthermore, there were increased populations following treatment with abamectin, cadusafos, and dazomet at Gocksung. The control effects of BA12011 treatment on plant-parasitic nematodes were confirmed to be similar to those of the other 4 nematicides evaluated, although its control effect was higher than that of fosthiazate in cucumber-growing soil at Gongju. The effects of nematicide treatment on egg mass formation in each of the collected soils differed according to the region of soil origin. Abamectin was effective in reducing the degree of egg mass formation in Buyeo and Jinju soil, whereas BA12011 was effective in Nonsan and Gocksung soil. Dazomet was found to inhibit egg mass formation in Gongju soil. To evaluate the effect of the newly developed nematicide, BA12011, experiments were conducted in a cucumber-growing greenhouse. The average population densities of Meloidogyne spp., Pratylenchus spp., and Helicotylenchus spp. after the first treatment were reduced to a greater extent than after the second treatment. It is thus suggested that early nematicide treatment is important for effective control of plant-parasitic nematodes.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.46-52
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• 2012

Separate extraction of source ($R_S$) and drain ($R_D$) resistances caused by process, layout variations and long term degradation is very important in modeling and characterization of MOSFETs. In this work, we propose "Avalanche Hot-Source Method (AHSM)" for simple separated extraction of $R_S$ and $R_D$ in a single device. In AHSM, the high field region near the drain works as a new source for abundant carriers governing the current-voltage relationship in the MOSFET at high drain bias. We applied AHSM to n-channel MOSFETs as single-finger type with different channel width/length (W/L) combinations and verified its usefulness in the extraction of $R_S$ and $R_D$. We also confirmed that there is a negligible drift in the threshold voltage ($V_T$) and the subthreshold slope (SSW) even after application of the method to devices under practical conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.52-62
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• 2004

In this paper we look at the effect of Fringe-Enhanced-Barrier-lowering (FEBL) for high-K dielectric MOSFETs and the dependence of FEBL on various technological parameters (spacer dielectrics, overlap length, dielectric stack, S/D junction depth and dielectric thickness). We show that FEBL needs to be contained in order to maintain the performance advantage with scaled high-K dielectric MOSFETs. The degradation in high-K dielectric MOSFETs is also identified as due to the additional coupling between the drain-to-source that occurs through the gate insulator, when the gate dielectric constant is significantly higher than the silicon dielectric constant. The technology parameters required to minimize the coupling through the high-K dielectric are identified. It is also shown that gate dielectric stack with a low-K material as bottom layer (very thin $SiO_2$ or oxy-nitride) will be helpful in minimizing FEBL. The circuit performance issues with high-K MOS transistors are also analyzed in this paper. An optimum range of values for the dielectric constant has been identified from the delay and the energy dissipation point of view. The dependence of the optimum K for different technology generations has been discussed. Circuit models for the parasitic capacitances in high-K transistors, by incorporating the fringing effects, have been presented.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.9
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• pp.55-59
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• 2013

A new method using RF Ids determined from measured S-parameters is proposed to extract the gate-voltage dependent effective carrier velocity of bulk MOSFETs in the saturation region without additional dc Ids measurement data suffering parasitic resistance effect that becomes larger with continuous down-scaling to sub-$0.1{\mu}m$. This method also allows us to extract the carrier velocity in the saturation region without the difficult extraction of bias-dependent parasitic gate-source capacitance and effective channel length. Using the RF technique, the electron velocity overshoot exceeding the bulk saturation velocity is observed in bulk N-MOSFETs with a polysilicon gate length of $0.065{\mu}m$.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.5
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• pp.393-400
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• 2013

The air supply system has a significant effect on the efficiency of polymer electrolyte membrane fuel cell (PEMFC) systems. The performance and efficiency of automotive PEMFC systems are greatly influenced by their air supply system configurations. This study deals with the system simulation of automotive PEMFC systems using MATLAB/Simulink framework. In this study, a low-pressure operating PEMFC system adopting blower sub-module (turbo-blower) is modeled to investigate the effects of stack operating temperature and air stoichiometry on the parasitic power and efficiency of automotive PEMFC systems. In addition, the PEMFC net system efficiency and parasitic power of air supply system are mainly compared for the two types (low-pressure operating and high-pressure operating) of automotive PEMFC systems under the same net power conditions. It is suggested that the obtained results from this system approach can be applied for establishing the novel operating strategies for FC vehicles.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.48 no.11
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• pp.873-880
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• 2020

In this paper, we propose a guidance filter to estimate line of sight rate with strapdown seeker measurements and INS(Inertial Navigation System) information. The measurements of proposed guidance filter consisted of the LOS(Line of Sight) and relative position that can be calculated with the seeker's measurements, INS information and known target position, also the filter is based on an asynchronous filter to use outputs of the two sensors that are out of synchronous and period. Through the proposed filter, we can reduce the effect on parasitic loop that can be caused by using large time delay seeker and improve the estimation performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.392-395
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• 2003

For the first time, the new dual trench gate Emitter Switched Thyristor is proposed for eliminating snap-back effect which leads to a lot of serious problems of device applications. Also, the parasitic thyristor that is inherent in the conventional EST is completely eliminated in the proposed EST structure, allowing higher maximum controllable current densities for ESTs. Moreover, the new dual trench gate allows homogenous current distribution throughout device and preserves the unique feature of the gate controlled current saturation of the thyristor current. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $354/{\S}^2$, respectively. But the proposed EST exhibits snap-back with the anode voltage and current density 0.93V and $58A/{\S}^2$, respectively. Saturation current density of the proposed EST at anode voltage 6.11V is $3797A/{\S}^2$. The characteristics of 700V forward blocking of the proposed EST obtained from two dimensional numerical simulations (MEDICI) is described and compared with that of the conventional EST.

• Korean Journal of Poultry Science
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• v.38 no.2
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• pp.155-164
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• 2011

The use of antimicrobials will be soon removed due to an increase of occurrence of antibiotic-resistant bacteria or ionophore-resistant Eimeria species in poultry farms and consumers' preference on drug-free chicken meats or eggs. Although dietary antimicrobials contributed to the growth and health of the chickens, we do not fully understand their interrelationship among antimicrobials, gut microbiota, and host immunity in poultry. In this review, we explored the current understanding on the effects of antimicrobials on gut microbiota and immune systems of chickens. Based on the published literatures, it is clear that antibiotics and antibiotic ionophores, when used singly or in combination could influence gut microbiota. However, antimicrobial effect on gut microbiota varied depending on the samples (e.g., gut locations, digesta vs. mucosa) used and among the experiments. It was noted that the digesta vs. the mucosa is the preferred sample with the results of no change, increase, or decrease in gut microbiota community. In future, the mucosa-associated bacteria should be targeted as they are known to closely interact with the host immune system and pathogen control. Although limited, dietary antimicrobials are known to modulate humoral and cell-mediated immunities. Ironically, the evidence is increasing that dietary antimicrobials may play an important role in triggering enteric disease such as gangrenous dermatitis, a devastating disease in poultry industry. Future work should be done to unravel our understanding on the complex interaction of host-pathogen-microbiota-antimicrobials in poultry.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.5
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• pp.959-964
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• 2018

In this paper, it was firstly confirmed that the drain current of the depleted SOI MOSFET operated in the high frequency response delay occurs by the inductive parasitic. Depleted SOI MOSFET cannot be applied as a conventional high-frequency MOSFET model because the response delay of the drain current is generated in accordance with the drain voltage fluctuation. This response delay may be described as a non-quasi-static effect, and the SOI MOSFET generated the response delay by the inductive parasitics compared to typical MOSFET. It is confirmed that depleted SOI MOSFET's RF characteristics can be well reproduced with the proposed method including the drain current response delay.