• Title/Summary/Keyword: parasitic current

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Fabrication and Characterization of Photo-Sensors for Very Small Scale Image System (초소형 영상시스템을 위한 광센서 제조 및 특성평가)

  • Shin, K.S.;Paek, K.K.;Lee, Y.S.;Lee, Y.H.;Park, J.H.;Ju, B.K.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.04a
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    • pp.187-190
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    • 2000
  • We fabricated general photo diode, surface etched photo diode and floating gate MOSFET by CMOS process. In a design stage, we expect that surface etched photo diode will be improved as to photo sensitivity. However, because the surface of silicon was damaged in etching process, the surface etched diode had a high dark current as well as low photo current level. Finally, we examined the current-voltage properties for the floating gate MOSFET on n-well and confirmed that the device can be act as an efficient photo-sensor. The floating gate MOSFET was operated in parasitic bipolar transistor mode.

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Single-Phase Transformerless PV Power Conditioning Systems with Low Leakage Current and Active Power Decoupling Capability

  • Nguyen, Hoang Vu;Park, Do-Hyeon;Lee, Dong-Choon
    • Journal of Power Electronics
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    • v.18 no.4
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    • pp.997-1006
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    • 2018
  • This paper proposes a transformerless photovoltaic (PV) power converter system based on the DC/AC boost inverter, which can solve the leakage current and second-order ripple power issues in single-phase grid-connected PV inverters. In the proposed topology, the leakage current can be decreased remarkably since most of the common-mode currents flow through the output capacitor, by-passing parasitic capacitors, and grounding resistors. In addition, the inherent ripple power component in the single-phase grid inverter can be suppressed without adding any extra components. Therefore, bulky electrolytic capacitors can be replaced by small film capacitors. The effectiveness of the proposed topology has been verified by simulation and experimental results for a 1-kW PV PCS.

Bi-directional Photovoltaic Inverter with High Efficiency and Low Noise (고 효율, 저 잡음 특성을 가지는 양방향 태양광 인버터)

  • Lee, Sung-Ho;Kwon, Jung-Min;Kwon, Bong-Hwan
    • The Transactions of the Korean Institute of Power Electronics
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    • v.17 no.6
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    • pp.539-545
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    • 2012
  • Due to merits cost and efficiency, the transformer-less type photovoltaic (PV) inverters have been popularized in the solar market. However, the leakage current flowing through a parasitic capacitor between PV array and ground can cause adverse effect in the transformer-less PV system. In this paper, a bi-directional PV inverter with high efficiency and low noise is proposed for the PV system with an energy storage device. The proposed inverter is a transformer-less type and performs the bi-directional power control between dc sources and grid with high efficiency. In addition, the proposed inverter can suppress the leakage current and obtain low noise characteristic. Finally, 3-kW prototype was implemented to confirm validity of the proposed inverter.

Suppression of High Frequency Distortion in the Multiple-Input Current-Mode MAX Circuits by Adjustment of Transconductance (전류 모드 다 입력 MAX회로에서 트랜스컨덕턴스 조정에 의한 고주파 왜곡 억제)

  • 이준수;손홍락;김형석
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.1053-1056
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    • 2003
  • A distortion suppression technology for employing multiple inputs in 3n+1 type current mode Max circuit is proposed using the adjustment of transconductance. If the number of inputs in current mode Max circuit increases, the high frequency distortion in the output signal grows. In this paper, it has been disclosed that the distortion in the multiple input Max circuit is proportional to sum of parasitic capacitance in input terminals, to the derivative of the output signal and also to the inverse of transconductance of the common diode-connected transistor. The proposed idea is by employing as larger transconductance of the common diode-connected transistor as possible. The effectiveness of the proposed idea has been proved through the HSPICE simulation.

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700V Emitter Switched Thyristor(EST) with Dual Trench Gate (700V급 듀얼 트랜치 게이트를 가지는 Emitter Switched Thyristor(EST))

  • Kim, Dae-Won;Sung, Man-Young;Kang, Ey-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.05b
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    • pp.27-30
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    • 2003
  • In this paper, the new dual trench gate Emitter Switched Thyristor (DTG-EST) is proposed for improving snap-back effect which leads to a lot of serious problems of device applications. And the parasitic thyristor that is inherent in the conventional EST is completely eliminated in this structure, allowing higher maximum controllable current densities for ESTs. The conventional EST exhibits snap-back with the anode voltage and current density 2.73V and $35A/cm^2$, respectively. But the proposed DTG-EST exhibits snap-back with the anode voltage and current density 0.96V and $100A/cm^2$, respectively.

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Development of Switching Power Module with Integrated Heat Sink and with Mezzanine Structure that Minimizes Current Imbalance of Parallel SiC Power Semiconductors (SiC 전력반도체의 병렬 구동 시 전류 불균형을 최소화하는 Mezzanine 구조의 방열일체형 스위칭 모듈 개발)

  • Jeong-Ho Lee;Sung-Soo Min;Gi-Young Lee;Rae-Young Kim
    • The Transactions of the Korean Institute of Power Electronics
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    • v.28 no.1
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    • pp.39-47
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    • 2023
  • This paper applies a structural technique with uniform parallel switch characteristics in gates and power loops to minimize the ringing and current imbalance that occurs when a general discrete package (TO-247)-based power semiconductor device is operated in parallel. Also, this propose a heat sink integrated switching module with heat sink design flexibility and high power density. The developed heat dissipation-integrated switching module verifies the symmetry of the parasitic inductance of the parallel switch through Q3D by ansys and the validity of the structural technique of the parallel switch using the LLC resonant converter experiment operating at a rated capacity of 7.5 kW.

Effect of Hole Transport Layer on the Electrical and Optical Characteristics of Inverted Organic Light-Emitting Diodes (정공수송층이 역구조 OLED의 전기 및 광학적 특성에 미치는 영향)

  • Se-Jin Im;Dae-Gyu Moon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.4
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    • pp.397-402
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    • 2023
  • We have developed inverted green phosphorescent organic light emitting diodes (OLEDs) using 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and bis(carbazole-9-yl)biphenyl (CBP) hole transport layers. The driving voltage, current efficiency, power efficiency, and emission characteristics of devices were investigated. While the driving voltage for the same current density was about 1~2 V lower in the devices with the TAPC layer, the maximum luminance was higher in the device with the CBP layer. The maximum current efficiency and power efficiency were 3.2 and 2.7 times higher in the device with the CBP layer, respectively. The higher efficiency in the CBP device resulted from the enhanced hole-electron balance although weak parasitic recombination takes place in the CBP hole transport layer.

Active Controlled Primary Current Cutting-Off ZVZCS PWM Three-Level DC-DC Converter

  • Shi, Yong
    • Journal of Power Electronics
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    • v.18 no.2
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    • pp.375-382
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    • 2018
  • A novel active controlled primary current cutting-off zero-voltage and zero-current switching (ZVZCS) PWM three-level dc-dc converter (TLC) is proposed in this paper. The proposed converter has some attractive advantages. The OFF voltage on the primary switches is only Vin/2 due to the series connected structure. The leading-leg switches can obtain zero-voltage switching (ZVS), and the lagging-leg switches can achieve zero-current switching (ZCS) in a wide load range. Two MOSFETs, referred to as cutting-off MOSFETs, with an ultra-low on-state resistance are used as active controlled primary current cutting-off components, and the added conduction loss can be neglected. The added MOSFETs are switched ON and OFF with ZCS that is irrelevant to the load current. Thus, the auxiliary switching loss can be significantly minimized. In addition, these MOSFETs are not series connected in the circuit loop of the dc input bus bar and the primary switches, which results in a low parasitic inductance. The operation principle and some relevant analyses are provided, and a 6-kW laboratory prototype is built to verify the proposed converter.

The Quest for Plant Nematode Biological Control-Facts and Hypotheses

  • Zuckerman, Bert M.;Esnard, Joseph
    • Proceedings of the Korean Society of Plant Pathology Conference
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    • 1994.06a
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    • pp.62-74
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    • 1994
  • The current status of the development of commercial products for the biological control of plant-parasitic nematodes is discussed. an example is given of problems encountered by our program in patenting biocontrol agents in the United Stats. Two hypothetical approaches to the control of plant nematodes are considered. First recent experimental results relating to the theory on intervention with host-finding by plant nematodes are reviewed. Second, a newer hypothesis considering the possibilities for genetic approaches to modifying molecular signals between nematodes and their parasites is described.

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A Study on the Self-Oscillating Mixer

  • Park, K. D.;S. Sakurazawa;H. Arai
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.05a
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    • pp.132-134
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    • 2000
  • This paper presents self-oscillating mixer(SOM) with simple structure which includes dc source, a cross type groove, and a three terminal GaAsFET. By using parasitic elements such as cooper wires, If level of the active antenna is increased. In order to include active device into FDTD analysis, equivalent voltage source are used to substitute for the active device and to describe the voltage-current relationships. This approach is applied to analyze SOM theoretically.

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