• 전기학회논문지
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• 제57권3호
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• pp.409-415
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• 2008

This paper proposed a new optimal design method of the electronic ballast with stable run-up current for Metal Halide lamp during the ignition condition. In order to avoid operation in the acoustic resonance frequency band and to supply the optimal ignition current without demage of inverter switching components during the ignition period, the values of the series inductor Ls, the series capacitor Cs, and the parallel capacitor Cp were determined by analysis of characteristics of inverter transfer function depend on Lamp operating power and resistance of ignition condition and steady state operating condition. For the prototype ballast for a 400W Metal Halide Lamp, experimental results are presented in order to validate the proposed method.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 F
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• pp.1948-1950
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• 1997

In this paper, we compose of the single current source inverter for utility interactive photovoltaic system. According to insert parallel resonant circuit, the do reactor decreases the distortion of dc current and output current. Therefore, we decrease the do reactance and control modulation factor to operation at the maximum power point around of solar cell.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.372-375
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• 2000

본 논문은 대용량에 적합한 직·병렬 구조를 가지는 공진형 고압 DC 전원장치에 대한 것이다 이 장치는 전력소자(IGBT)가 스위칭 할 때 발생하는 스위칭 손실과 EMI를 감소시키기 위해서 UC3879를 이용한 영전압 스위칭 (ZVS; Zero Voltage Switching)방식을 채택하였고 영전압 스위칭 위상차제어 직렬 공진형(ZVS PCS-SPI ; ZVS Phase Shifted Control Series Resonant Inverter)으로 동작시켜 고압변압기의 누설 인덕터와 기생 캐패시터를 이용하여 승압이 효과적으로 일어나도록 하였다 또한 고압부는 입력과 효과적으로 일어나도록 하였다 또한 고압부는 입력과 출력부분이 각각 병렬과 직렬로 구성되어 있어서 각각의 모듈이 독립적인 ZVS가 일어나도록 하여 대용량화가 용의 하도록 하였다 본 논문에서10kV/60kW급의 대용량 고압 DC 전원 장치를 구성하여 이를 증명하였다.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문집
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• pp.228-233
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• 2002

General modeling of a resonant shunting damper has been made from piezoelectric sensor/actuator equation. It is found that an additional damping, which is augmented to a system, is generated by the shunt damping effect. The transfer function of the tuned electrical absorber is derived for both series and parallel shunt circuit. The governing equations and associated boundary conditions are derived using Hamilton's Principle. The shunt voltage equation is also derived from the charge generated in PZT due to beam vibration. The frequency response function of the obtained mathematical model is compared with that of the tuned electrical absorber and experimental work. The vibration amplitude is reduced about 15 dB at targeted second mode frequency.

• 전기학회논문지
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• 제56권10호
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• pp.1814-1819
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• 2007

A new active resonator using defected ground structure with islands (DGSI) is proposed. The proposed resonator is composed of the conventional microstrip line with DGSI and negative resistance of active devices. The negative resistance part is realized by field effect transistor (FET) series feedback circuits. The characteristic of the proposed resonator with DGSI is improved by combining the negative resistance part with the parallel microstrip line structure with islands, where the electric field is formed the most strongly. The measured improvement of the proposed active resonator with DGSI are 4.55dB and 0.32dB in S21 and S22, respectively, at the resonant frequency whorl it is compared to the existing passive resonator having DGSI only.

• 전자공학회논문지S
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• 제34S권1호
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• pp.145-153
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• 1997

This paper proposes a constant frequency controlled forward zero voltage switching multi resonant converter (ZVS-MRC) which operates with a fixed duty ratio. The proposed converter is obtained from a conventional forward ZVS-MRC by placing a saturable core in parallel with the secondary side of the transformer. Experimental results are presented for a proposed converter which operates at 1.5MHz switching frequency with an output power of 50W (5V/10A). The merits of the proposed converter include ; 1) reduced voltage stress to the main switch compared with the conventional counterpart, 2) ease on designing the magnetic components including EMI and output filter, and 3) simple control scheme.

• 한국정보통신학회논문지
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• 제7권6호
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• pp.1109-1114
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• 2003

마이크로스트립 선로의 접지면에 슬롯이 있는 SGPS (Split Ground Plane Structure) 구조는 등가적으로 병렬공진 특성을 갖는다. 슬롯의 길이가 특정 주파수의 반파장과 같으면 큰 감쇠특성을 나타낸다. 본 연구에서는 SGPS 구조의 슬롯 중앙에 저항을 두고 저항 값을 가변하면 공진주파수에서 감쇠특성이 변하는 원리를 이용하여 MMIC용 가변 감쇠기를 설계하였다. 이 감쇠기에서 저항대신 PIN 다이오드를 이용하면 송수신기에서 자동이득조절 (AGC) 회로에 응용할 수 있다.

• 전력전자학회논문지
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• 제20권3호
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• pp.223-231
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• 2015

LEDs have been widely used in lighting displays, automobiles, and airplanes owing to their excellent light output characteristics and long lifespan. Though LEDs are manufactured under the same process, variations in impurity concentrations cause electrical deviation among LEDs. The resulting electrical deviation can not only reduce the life time of the LED but also cause non-uniform luminance of LEDs connected in parallel. LED driving circuit is required to solve these problems. In this paper, we propose a LED driving system using Y-type current balancing transformer to maximize the efficiency of the system by removing output stage Schottky diodes. Experimental results are presented to verify the performance of proposed LED driving system that is applied to 80 W LED modules.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 B
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• pp.788-790
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• 1999

고주파 열처리 유도로의 설계에서 품질의 향상을 위하여 인버터의 고주파 기술이 요구되고 있다. 본 연구에서는 고주파 유도가열 장치의 대용량, 고주파 화를 실현하기 위하여 회로 설계 기술과 제어방식을 제안하였다. 부하 공진 인버터는 H형 전-브리지로 구성하고 각 암 당 IGBT를 2병렬로 조합하여 구성하고 부하는 직병렬 공진회로로 구성한다. 스위칭 동작은 8개의 IGBT중 각 암 당 2개씩 순차제어하여 고속 대용량의 고주파 전력을 출력시킨다. 또한 스위칭은 스위치 턴온 오프시에 스위칭 손실을 줄이기 위해 ZVS기법을 도입한다. 제어는 고정주파수 PWM제어를 하여 전력변환 효율을 극대화한다.

• 대한기계학회논문집A
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• 제20권5호
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• pp.1363-1371
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• 1996

This paper presents the design, fabrication, and testing of polysilicon electrostatic microactuators that resonate in the direction parallel to the silicon susbstrates. A set of six different designs has been developed using a theoretical model and design formulae developed for the mocroactuators. Microactuator prototypes are fabricated from a 2.1 $\mu{m}$-thick LPCVD polysilicon film, using a 4-mask surface-micromachining process. The prototypes are tested under a d.c. bias voltage of 45V with an a.c. drive voltage amplitude of 20 v.Measured resorant frequencies are in the ranges of 40-60 kHz, showing a good agreement to their theoretical estimates within error bounds of .$\pm$.5%. Important issues inthe design and microfabrication of the microactuators are discussed, together with potential applicaitons of the key technology involved.