• Journal of Surface Science and Engineering
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• v.34 no.5
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• pp.481-485
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• 2001

We investigated the structural and electrical properties of the Ba ($Zr_{x}$ $T_{il-x}$ )$O_3$ (BZT thin films with a mole fraction of x=0.2 and thickness 150 nm for the application in MLCC (Multilayer Ceramic Capacitor). BZT films were prepared on $Pt/SiO_2$/Si substrate at various substrate temperatures by the RF-magnetron sputtering system. When the substrate temperature was above $500^{\circ}C$, we could obtain multi-crystalline BZT films oriented at (110), (111), and (200) directions. The crystallization of the film and high dielectric constant were observed with the increase of substrate temperature. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature. This paper reports surface morphology, dielectric constant, dissipation factor, and C-V characteristics for BZT films deposited at three different temperatures. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties but a little small dielectric constant for MLCC application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.3
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• pp.270-277
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• 2013

In this paper, we propose a wideband ridge SIW(Ridge Substrate Integrated Waveguide)-to-SIW(Substrate Integrated Waveguide) transition. The proposed transition structure is designed to acquire a wide bandwidth by inserting through via holes at the regular interval for an impedance matching and an E-field mode matching method. The measurement results show a fractional bandwidth is 29.1 % at 20 dB return loss from the center frequency(11 GHz). The maximum insertion loss is 0.49 dB from 9.21 GHz to 12.41 GHz.

• ETRI Journal
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• v.32 no.2
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• pp.195-203
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• 2010

A new vertical transition between a substrate integrated waveguide in a low-temperature co-fired ceramic substrate and an air-filled standard waveguide is proposed in this paper. A rectangular cavity resonator with closely spaced metallic vias is designed to connect the substrate integrated waveguide to the standard air-filled waveguide. Physical characteristics of an air-filled WR-22 to WR-22 transition are compared with those of the proposed transition. Simulation and experiment demonstrate that the proposed transition shows a -1.3 dB insertion loss and 6.2 GHz bandwidth with a 10 dB return loss for the back-to-back module. A 40 GHz low-temperature co-fired ceramic module with the proposed vertical transition is also implemented. The implemented module is very compact, measuring 57 mm ${\times}$ 28 mm ${\times}$ 3.3 mm.

• Journal of the Korean Applied Science and Technology
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• v.32 no.2
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• pp.232-239
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• 2015

In this paper, we study the dry transfer technology utilizing PDMS (Polydimethylsiloxane) stamp of a large single-layer graphene grown on Cu-foil as catalytic metal by using Chemical Vapor Deposition (CVD). By changing the surface property of the target substrate through $UV/O_3$ treatment, we can transfer the graphene on the target substrate while minimizing mechanical damages of graphene layer. Multi-layer (1~4 layers) graphene was stacked on $SiO_2/Si$ wafer successfully by repeating thetransfer method/process and then optical transmittance and sheet resistance of graphene layers have been measured as a quality assessment.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.12
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• pp.1139-1143
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• 2007

A simple method for the fabrication of 3D micro-nano hybrid patterns was presented. In conventional fabrication methods of the micro-nano hybrid patterns, micro-patterns were firstly fabricated and then nano-patterns were formatted on the micro-patterns. Moreover, these micro-nano hybrid patterns could be fabricated on the flat substrate. In this paper, we suggested the fabrication method of 3D micro-nano hybrid patterns using micro-indentation on the anodized aluminum substrate. Since diameter of the hemispherical nano-pattern can be controlled by electrolyte and applied voltage in the anodizing process, we can easily fabricated nano-patterns of diameter of loom to 300nm. Nano-patterns were firstly formatted on the aluminum substrate, and then micro-patterns were fabricated by deforming the nano-patterned aluminum substrate. Hemispherical nano-patterns of diameter of 150nm were fabricated by anodizing process, and then micro-pyramid patterns of the side-length of $50{\mu}m$ were formatted on the nano-patterns using micro-indentation. Finally we successfully replicated 3D micro-nano hybrid patterns by hot-embossing process. 3D micro-nano hybrid patterns can be applied to nano-photonic device and nano-biochip application.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.935-942
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• 2006

In this paper, a novel theory of realizing the series capacitor with broadside coupled suspended substrate stripline (BCSSS) is proposed. The proposed theory is relatively simple because the method of odd mode analysis is only applied: However, this theory supplies reliable result by considering the line effective width and end effect caused by the fringing field. The simulation results are presented to compare and analyze the characteristics of the ideal lumped capacitor and the coupled line capacitor. Also, the capacitive gap coupled line band-pass filter based on the proposed theory are designed and fabricated. The results prove successfully the validity of the proposed theory.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.93-101
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• 1999

The purposed of this paper is to investigate the electrical and thermal stability of Polyvinylidene fluoride(PVDF) organic thin films prepared by the vapor deposition method. The differential scanning calorimetry curve of the PVDF organic thin films prepared by increasing substrate temperature showed that the melting curve increased from $128^{\circ}C$ to $142^{\circ}C$. This result implied that the PVDF organic thin film prepared by increasing substrate temperature increased intermolecular force in the crystalline region. The anomalous properties in dielectric constant and dielectric loss at low frequency and high temperature were described for PVDF organic thin film containing impurity carriers. It was confirmed that in view of electric conductive characteristics the ohm's law is satisfied in the range of lower electric field and ln J was proportional to the electric field ln E as like the conventional property of ionic conduction in the range of higher electric field. It was confirmed that major carrier of conductivity was ions. The electrical stability was improved according to an increase of the substrate temperature. On the basis of this experimental result, it could be observed that the optimum temperature of substrate for the electrical and thermal stability was at $105^{\circ}C$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.05a
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• pp.55-56
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• 2018

In this paper, a method for analyzing the dielectric constant of a planar substrate is proposed. To this end, a band-stop filter was created by adding a H-shaped resonant aperture to the ground plane of a microstrip transmission line. A planar substrate of 2 mm thickness was placed behind the ground plane of the microstrip transmission line and the change of the resonant frequency with the change of the dielectric constant of the substrate was investigated. It can be seen that the change ratio of the frequency to the reference resonant frequency is larger than that of the conventional complementary split ring resonator structure.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2247-2252
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• 2012

In this paper, we produced CIGS thin film by co-evaporation method. During the process, substrate temperature and Ga/(In+Ga) composition ratio was altered to observe the change of resistivity and absorbance spectra measurements. As substrate temperature increased, resistivity decreased and as Ga/(In+Ga) composition ratio increased from 0.30 to 0.72, band gap also increased with the range of 1.26eV, 1.30eV, 1.43eV, 1.47eV. With the constant condition of composition ratio, resistivity decreased with increased thickness of the thin film. On this experiment, we assumed that optical absorbance ratio and optical current will be increased with CIGS thin film fabrication.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.152-157
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• 2001

For the fabrication of YBa$_2$Cu$_3$O$_{x}$ thick film using diffusion process between $Y_3$BaCuO$_{5}$ and BaO+CuO, each material was selected as substrate and doping material. In this paper, we investigated the characteristic of YBa$_2$Cu$_3$O$_{x}$ thick film due to both addition of CeO$_2$into substrate and initial particle size of doping material. Through X-ray diffraction patterns and SEM photographs, the variation of composition and thickness of the formed phase was observed. It was from the experiment obtained that the addition of CeO$_2$into $Y_2$BaCuO$_{5}$ substrate and the initial particle size of doping material play important part in promoting the reaction between substrate and doping material.aterial.