• Title/Summary/Keyword: packaging system

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Vibration Analysis of Pears in Packaged Freight Using Finite Element Method (유한요소법을 이용한 골판지 포장화물내 배의 진동해석)

  • Kim M. S.;Jung H. M.;Kim K. B.
    • Journal of Biosystems Engineering
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    • v.29 no.6 s.107
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    • pp.501-507
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    • 2004
  • Fruits we subjected to complex dynamic stresses in the transportation environment. During a long journey from the production area to markets, there is always some degree of vibration present. Vibration inputs are transmitted from the vehicle through the packaging to the fruit. Inside, these cause sustained bouncing of fruits against each other and container wall. These steady state vibration input may cause serious fruit injury, and this damage is particularly severe whenever the fruit inside the package is free to bounce, and is vibrated at its resonant frequency. The determination of the resonant frequencies of the fruit may help the packaging designer to determine the proper packaging system providing adequate protection for the fruit, and to understand the complex interaction between the components of fruit when they relate to expected transportation vibration inputs. The vibration characteristics of the pears in corrugated fiberboard container in transit were analyzed using FEM (finite element method) modeling, and the FEM modeling approach was first validated by comparing the results obtained from simulation and experiment for the pear in the frequency range 3 to 150 Hz and acceleration level of 0.25 G-rms and it was found that between simulated and measured frequencies of the pears have a relatively good agreement. It was observed that the fruit and vegetables in corrugated fiberboard container could be analyzed by finite element method. As the elastic modulus of the cushion materials of corrugated fiberboard pad and tray cup decreased, the first frequencies of upper and lower pears increased and the peak acceleration decreased.

Environmental Degradation Index for the Reduction of Packing Wastes (포장 폐기물 감량을 위한 환경저해지수 제안)

  • Hong, Ho-jin;Cho, Hyun-min;Choi, Seong-Hoon
    • Journal of Korean Society of Industrial and Systems Engineering
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    • v.43 no.1
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    • pp.26-33
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    • 2020
  • The plastic waste problem is deepening all over the world. Plastic wastes have serious impacts on our lives as well as environ- mental pollution. The production and use of plastics increases every year, but once they are produced, they usually roam the earth for hundreds or thousands of years to pollute the environment. Although there is growing interest in plastic issues around the world and environmental regulations are being tightened, but no clear solution has yet been found. This study suggests Environmental degradation index (EDI). EDI can help raise consumers' attention to plastic wastes. In addition, EDI will contribute to reduce them in the future. As far as we know, this is the first study. We developed EDI for the confectionery packaging. This study defines four factors that may affect the environment of confectionery packaging: greenhouse gas emissions, energy consumption, methane emissions, and packaging space ratio. Then we quantify the value of each element and compute EDI as the sum of the four component values. In order to evaluate the feasibility of EDI proposed in this study, confectionery-packaging materials distributed in Korea were collected and analyzed. First, the types of confectionery are classified into pies, biscuits, and snacks and basic data was collected. Then the values of the four components were calculated using existing research data on the environment. We can use the proposed EDI to determine how much a product packing affects the environment.

Effects of Wafer Warpage on the Misalignment in Wafer Level Stacking Process (웨이퍼 레벨 적층 공정에서 웨이퍼 휘어짐이 정렬 오차에 미치는 영향)

  • Shin, Sowon;Park, Mansoek;Kim, Sarah Eunkyung;Kim, Sungdong
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.71-74
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    • 2013
  • In this study, the effects of wafer warpage on the misalignment during wafer stacking process were investigated. The wafer with $45{\mu}m$ bow height warpage was purposely fabricated by depositing Cu thin film on a silicon wafer and the bonding misalignment after bonding was observed to range from $6{\mu}m$ to $15{\mu}m$. This misalignment could be explained by a combination of $5{\mu}m$ radial expansion and $10{\mu}m$ linear slip. The wafer warpage seemed to be responsible for the slip-induced misalignment instead of radial expansion misalignment.

Growth of Non-Powered Hydroponics Equipment and Quality Characteristics according to Post-Harvest Packaging by Cultural Methods on Leaf Lettuce (무동력 수경재배 장치의 상추 생육과 수확 후 포장에 따른 품질 특성)

  • Jung-Soo, Lee
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.28 no.3
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    • pp.231-236
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    • 2022
  • The research was aimed to improve pre-harvest methods to maintain marketability in postharvest leaf lettuce. In this study, the effect of hydroponics on the growth and post-harvest storage characteristics of 'Chongchima' lettuce grown in peat mass medium hydroponic system using a non-powered culture device or deep water culture (DWC) was evaluated. There was no difference in fresh weight, leaf number, SPAD, moisture content, and C/N ratio between peat moss growing medium hydroponic and DWC methods except plant height. It was found that lettuce cultivation by a nonpowered hydroponics method is easier than the existing DWC. The quality parameters, such as fresh weight loss, SPAD value, and general appearance of lettuce were investigated after harvest. There was no significant difference in fresh weight loss and general appearance during storage of lettuce by the hydroponics methods. However, with the increased storage time of SPAD, which is related to chlorophyll content, was slightly higher in peat moss medium hydroponic was than DWC. When crops such as lettuce are grown under favorable conditions without any agronomic abnormalities, it is suggested that post-harvest storage is not significantly affected by peat moss growing medium hydroponic and DWC.

Determination of Semicarbazide in PVC Gaskets of Food Bottle Cap and Foods (식품병마개 PVC gasket과 식품에 함유된 semicarbazide의 분석)

  • Park, Sang-Wook;Lee, Kwang-Ho;Kwak, In-Shin;Jeon, Dae-Hoon;Lee, Si-Kyung
    • Korean Journal of Food Science and Technology
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    • v.37 no.3
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    • pp.334-338
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    • 2005
  • Method was developed to efficiently analyze semicarbazide (SEM) in foods. Although SEM is produced by thermal decomposition of blowing agent azodicarbonamide, it is too small to be activated by ultraviolet light or fluorescence. When 2-nitrobenzaldehyde semicarbazone, derivatization of SEM, was analyzed by HPLC with triple column system, coefficient correlation over 0.9997 and detection limit of 0.48 ng/g were observed. SEM level in commercial bottle cap gasket was 812.20-5771.30ng/g. Recoveries for SEM in food and PVC gasket were 83.45-97.33% and 92.12-98.71%, respectively. SEM level in plastic seals of press twist-off metal lids was ND-5771.330ng/g.

Construction of New P4-Derived Vector Plasmid Containing Tetracyclin Resistance Marker for the Bacteriophage P2-P4 System (박테리오파아지 P2-P4 시스템을 위한 tetracyclin resistance marker 함유 P4 유도체 벡터 플라스미드 조성)

  • Kim, Kyoung-Jin
    • Korean Journal of Microbiology
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    • v.39 no.2
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    • pp.118-122
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    • 2003
  • To develop vector plasmid for the bacteriophage P2-P4 system which is a useful experimental tool for the study of viral capsid assembly, we constructed a new P4-derived vector plasmid starting from P4 ash8 sid71 With recombinant DNA technology, a portion of P4 genome was deleted and tetracyclin resistance gene (terR) was introduced into P4 genome to give P4 selectivity. Resulting P4 ash8(sid71) terR was 12.09 kb long and could be converted to a viable bacteriophage with P2 infection. The burst size of induced bacteriophage form of P4 ash8(sid71) terR was determined. The CsCl buoyant equilibrium density gradient experiment of new P4 derivative suggested the upper limit of packaging capacity in P2-size head.

Development of Cu CMP process for Cu-to-Cu wafer stacking (Cu-to-Cu 웨이퍼 적층을 위한 Cu CMP 특성 분석)

  • Song, Inhyeop;Lee, Minjae;Kim, Sungdong;Kim, Sarah Eunkyung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.4
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    • pp.81-85
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    • 2013
  • Wafer stacking technology becomes more important for the next generation IC technology. It requires new process development such as TSV, wafer bonding, and wafer thinning and also needs to resolve wafer warpage, power delivery, and thermo-mechanical reliability for high volume manufacturing. In this study, Cu CMP which is the key process for wafer bonding has been studied using Cu CMP and oxide CMP processes. Wafer samples were fabricated on 8" Si wafer using a damascene process. Cu dishing after Cu CMP and oxide CMP was $180{\AA}$ in average and the total height from wafer surface to bump surface was approximately $2000{\AA}$.

Dielectric and Piezoelectric Properties of Pb(Zr1/2Ti1/2)O3-Pb(Cu1/3Nb2/3)O3-Pb(Mn1/3Nb2/3)O3 System (Pb(Zr1/2Ti1/2O3-Pb(Cu1/3Nb2/3)O3-Pb(Mn1/3Nb2/3)O3계의 유전 및 압전 특성)

  • Lee, Hyeung-Gyu;Kang, Hyung-Won;Choi, Ji-Hyun
    • Journal of the Korean Ceramic Society
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    • v.42 no.10 s.281
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    • pp.698-702
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    • 2005
  • Dielectric and Piezoelectric properties of complex perovskite 0.92Pb($Zr_{1/2}Ti_{1/2})O_{3}-(0.08-x)Pb(Cu_{1/3}Nb_{2/3})O_{3}-xPb(Mn_{1/3}Nb_{2/3})O_{3}(0{\leq}x{\leq}0.080$) (PZT-PCN-PMN) system were investigated as a function of PMN content. With the increase of PMN content of the sintered specimens, tetragonal phase was coexisted with rhombohedral phase, the dielectric constant was decreased, mechanical quality factor ($Q_{m}$) was inceased, and optimal sintering temperature was increased up to 1050$^{\circ}C$. For the composition of x = 0.064 sintered at 1050$^{\circ}C$ for 2 h, 1939 of maximum mechanical quality factor ($Q_{m}$), 57$\%$ of electromechanical coupling factor ($k_{p}$), and 1100$^{\circ}C$ of dielectric constant, 0.37$\% $ of dielectric loss (tan $\delta$) were obtained.

Development of Charcoal Containing Paper for Packaging Grades(II) - Electrical and Physical Properties - (숯을 활용한 포장재 개발에 관한 연구(제2보) -전기적, 물리적 성질 -)

  • Seo, Young-Bum;Jeon, Yang;Lee, Hwa-Hyung;Jung, Tae-Young;Lee, Jong-Seok
    • Journal of Korea Technical Association of The Pulp and Paper Industry
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    • v.35 no.2
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    • pp.52-57
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    • 2003
  • The charcoal is known to have gas adsorption capability and electrical properties. Some practical applications of carbon materials for the purpose of limited electrical conduction were made in these days. In this paper, we applied the several different kinds of charcoal to the papers in three different ways to investigate if charcoal application method affects its electrical conduction capability. Wet end addition, making multiply, and coating method were tested. The area electrical resistivity of charcoal containing paper was measured. The strength properties of charcoal containing paper were compared to those of the control, which had no charcoal in it. Experimental results showed that manufacturing conditions of the charcoal itself changed its electrical and strength properties of charcoal containing paper. The electrical properties of charcoal containing paper can be used for the removal of electrostatic problem in packaging system. The strength property of the charcoal containing paper should be kept, at least, over the minimum requirement for the packaging system. By using coating method on paper or making multiply, strength loss of paper by inclusion of charcoal could be overcome.

The Effects of Current Types on Through Via Hole Filling for 3D-SiP Application (전류인가 방법이 3D-SiP용 Through Via Hole의 Filling에 미치는 영향)

  • Chang, Gun-Ho;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.4
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    • pp.45-50
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    • 2006
  • Copper via filling is the important factor in 3-D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size via hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The holes, $20\and\;50{\mu}m$ in diameter and $100{\sim}190\;{\mu}m$ in height. The holes were prepared by DRIE method. Ta was sputtered for copper diffusion barrier followed by copper seed layer IMP sputtering. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were successfully obtained.

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