• Proceedings of the Korean Society of Dyers and Finishers Conference
• /
• 2011.03a
• /
• pp.63-63
• /
• 2011

The donor-${\pi}$-acceptor (D-${\pi}$-A) chromophoric dye system has received great attention in variety fields such as electroluminescent materials, sensors and optoelectronic devices. There are many research activities focused on the development for abovementioned application materials with the high-performance properties. In the previous work, we are reported that novel D-${\pi}$-A dye, 2-[4-(9H-carbazol-9-yl)benzylidene]-2,3-dihydroinden-1-one, is successfully attained and exhibited a positive fluorescence solvatochromism. In this work, the molecular structure and packing geometry of 2-[4-(9H-carbazol-9-yl)benzylidene]-2,3-dihydroinden-1-one was discussed by their conformational structure. Their single yellow prism crystal having approximate dimensions of $0.30{\times}0.10{\times}0.10$ mm was carried out with a Rigaku RAXIS RAPID imaging plate area detector with graphite monochromated $CuK_{\alpha}$ radiation. Their crystal structure were solved by using the CrystalStructure crystallographic software package.

• Journal of Welding and Joining
• /
• v.19 no.5
• /
• pp.520-525
• /
• 2001

The Sn-Pb eutectic solder bump formation ($150\mu\textrm{m}$ diameter, $250\mu\textrm{m}$ pitch) by electroplating was studied for flip chip package fabrication. The effect of current density and plating time on Sn-Pb deposit was investigated. The morphology and composition of plated solder surface was examined by scanning electron microscopy. The plating thickness increased wish increasing time. The plating rate became constant at limiting current density. After the characteristics of Sn-Pb plating were investigated, Sn-Pb solder bumps were fabricated in optimal condition of $7A/dm^$. 4hr. Ball shear test after reflow was performed to measure adhesion strength between solder bump and UBM (Under Bump Metallurgy). The shear strength of Sn-Pb bump after reflow was higher than that of before reflow.

• Proceedings of the Korean Institute Of Construction Engineering and Management
• /
• 2004.11a
• /
• pp.539-542
• /
• 2004

Nowadays, High-rise building becomes higher and bigger than ever. As a result, lots of construction materials are needed at the same times. Because of divided diverse process of construction, several different Processes concur simultaneously with complexity of procurement. So, effective construction material supply and lift-up are essential part of the spot. Especially, when ending part of construction, there are much conflict between finishing and equipment materials also problems of folding lift-up. The Purpose of this paper is suggesting better effective lift-up system through analysis of loading factors.

• Journal of the Korean Institute of Gas
• /
• v.18 no.4
• /
• pp.27-34
• /
• 2014

In this study, we evaluated an effect of the tempered materials on the thermal runaway characteristics in the resol resin synthesis reaction using the adiabatic calorimetry of vent sizing package 2(VSP2). The kinetic parameters, such as an activation energy and heat of reaction, were estimated using the test results. As the results, the instantaneous characteristics to express the intensity of runaway reaction decreased at the low solid content. However, the sudden loss of the tempered materials triggered the second runaway reaction rapidly. In this condition, the heat of reaction and the activation energy of phenol and p-formaldehyde were about 157 kJ/mol and 60 kJ/mol, respectively.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.1
• /
• pp.69-73
• /
• 2010

Finite-element analyses were conducted to investigate the thermal stress in 3-dimensional stacked wafers package containing through-silicon-via (TSV), which is being widely used for 3-Dimensional integration. With finite element method (FEM), thermal stress was analyzed with the variation of TSV diameter, bonding diameter, pitch and TSV height. It was revealed that the maximum von Mises stresses occurred at the edge of top interface between Cu TSV and Si and the Si to Si bonding site. As TSV diameter increased, the von Mises stress at the edge of TSV increased. As bonding diameter increased, the von Mises stress at Si to Si bonding site increased. As pitch increased, the von Mises stress at Si to Si bonding site increased. The TSV height did not affect the von Mises stress. Therefore, it is expected that smaller Cu TSV diameter and pitch will ensure mechanical reliability because of the smaller chance of plastic deformation and crack initiation.

• Korean Journal of Materials Research
• /
• v.26 no.8
• /
• pp.438-443
• /
• 2016

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and $100^{\circ}C$. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.151-151
• /
• 2003

최근 휴대폰용 LCD, 컴퓨터용 TFT LCD, 가정용 PDP 등 평판 디스플레이 산업의 발달에 힘입어 평판 디스플레이 장치의 구동 칩 실장 부품인 TCP(tape carrier package), COF(chip on film) 제조 산업 또한 발전하고 있다. 이들 TCP, COF는 디스플레이 장치의 경박화에 따라 보다 가는 선폭의 회로가 요구되어지는데 이를 위해 회로를 구성하는 기본소재로 얇은 두께의 동박이 사용된다. 회로기판용 동박으로는 압연동박과 전해동박이 함께 사용되어 왔으나 박막의 제조가 어려운 압연동박의 단점과 면에 수직한 주상정 조직이 발달해 있어 일반 압연 동박에 비해 접착력이 뛰어나며 전류밀도 또는 티타늄 음극 드럼 회전 속도를 조절하여 두게 조절이 용이한 전해동박의 장점으로 인해 현재 압연동박의 전해동박으로의 대체가 증가하고 있다. 전해동박의 제조공정은 크게 제박 공정과 후처리 공정으로 나눌 수 있다. 전해동박은 먼저 드럼형태의 티타늄 음극과 불용성 납 양극으로 이루어진 제박기에 고 전류를 가하여 황산구리 용액 중 구리를 티타늄 음극에 석출시킴으로서 구리 원박을 제조한 후 접착력 향상을 위한 노듈 형성, 방식, 방청, 내열성 향상 등을 위한 여러 개의 단위 셀 조합으로 이루어진 후처리 공정을 거쳐 제조된다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1703-1705
• /
• 2007

Before the ultra-violet glue encapsulation, the research evaporated LiF thin film on device surface to be the extra packaging layer for improving the lifetime of organic light-emitting diode. The formula of UV glue was specially developed. We found 100 nm LiF is the optimum thickness. The best lifetime obtained by using LiF and special UV glue is 2.4 times longer than those by commercial UV glue.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1993.11a
• /
• pp.49-54
• /
• 1993

This paper discusses the reliability of solder joints of electronic devices on printed circuit board. Solder application is usually done by screen printing method for the bonding between outer leads of devices and thick film(Ag/Pd) pattern on Hybrid IC as wel1 as Cu lands on PCB. As result of thermal stresses generated at the solder joints due to the differences of thermal expansion coefficients between packge body and PCB, Micro cracking often occurs due to thermal fatigue failure at solder joints. The initiation and the propagate of solder joint crack depends on the environmental conditions, such as storage temperature and thermal cycling. The principal mechanisms of the cracking pheno- mana are the formation of kirkendal void caused by the differences in diffusion rate of materials, ant the thermal fatigue effect due to the differences of thermal expansion coefficient between package body and PCB. Finally, This paper experimentally shows a way to supress solder joints cracks by using low-${\alpha}$ PCB and the packages with thin lead frame, and investigates the phenomena of diffusion near the bonding interfaces.

• Proceedings of the KWS Conference
• /
• 2002.10a
• /
• pp.463-468
• /
• 2002

This study investigates the variations of shear force, displacement, and fracture surface with the shear speed and the number of reflows. The experimental data of shear tests indicate that the shear force increases as increasing the number of reflows and the shear speed due to the formation of a kind of intermetallic compound, Ni$_3$Sn$_4$, on Au/Ni/Cu pad, and the work-hardening. However, general trends show that the shear force decreases due to increasing the thickness of the intermetallic compound over 4x reflow. It is observed that the intermetallic compound which is formed between solder and pad increases according to increasing the number of reflows, and the growth rate of the intermetallic compound at central region on the interface is faster than one at edge part. The general tendencies of shear force and displacement with different shear speeds are almost identical as an increase of the number of reflows.