• International Journal of Automotive Technology
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• 제8권4호
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• pp.493-504
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• 2007

This paper proposes a stereo vision-based forward obstacle detection and distance measurement method. In general, stereo vision-based obstacle detection methods in automotive applications can be classified into two categories: IPM (Inverse Perspective Mapping)-based and disparity histogram-based. The existing disparity histogram-based method was developed for stop-and-go applications. The proposed method extends the scope of the disparity histogram-based method to highway applications by 1) replacing the fixed rectangular ROI (Region Of Interest) with the traveling lane-based ROI, and 2) replacing the peak detection with a constant threshold with peak detection using the threshold-line and peakness evaluation. In order to increase the true positive rate while decreasing the false positive rate, multiple candidate peaks were generated and then verified by the edge feature correlation method. By testing the proposed method with images captured on the highway, it was shown that the proposed method was able to overcome problems in previous implementations while being applied successfully to highway collision warning/avoidance conditions, In addition, comparisons with laser radar showed that vision sensors with a wider FOV (Field Of View) provided faster responses to cutting-in vehicles. Finally, we integrated the proposed method into a longitudinal collision avoidance system. Experimental results showed that activated braking by risk assessment using the state of the ego-vehicle and measuring the distance to upcoming obstacles could successfully prevent collisions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1261-1263
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• 1997

Two kinds of optically-triggered p-i-n switches with planar and V-groove structures have been fabricated with gold-doped silicon. The V-groove device exhibits a higher threshold voltage and is more sensitive to light. The minimum optical power indicates that a certain minimum illumination is required to optically turn on the silicon p-i-n devices.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.69-75
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• 2003

Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

• 터널과지하공간
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• 제21권5호
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• pp.349-358
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• 2011

본 연구에서는 방사성폐기물처분장에서 발생하는 탄성파와 같이 낮은 신호 대 잡음비로 인하여 P파의 식별이 어려운 신호에 적합한 P파 도달시간 결정 알고리즘에 대한 연구를 수행하였다. 사용된 알고리즘은 임계 전압법, Akaike Information Criterion(AIC), Two step AIC, Hinkley criterion이며 샤프심 압절법에 의하여 생성된 탄성파 신호에 white noise를 적용하여 신호 대 잡음비를 낮추었다. 실험결과 임계전압, AIC, Hinkley criterion 알고리즘의 경우 배경잡음 수준이 증가함에 따라 P파 도달시간의 정확성은 감소하였으나 Two step AIC 알고리즘의 경우 1차적으로 결정된 P파의 도달시간 주변의 신호를 중심으로 특성함수와 AIC 알고리즘을 반복적으로 적용함에 따라 배경잡음 수준에 관계없이 정확한 결과를 나타냈다.

• 한국전기전자재료학회논문지
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• 제30권6호
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• pp.345-348
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• 2017

In this work, static characteristics of 4H-SiC SJ-ACCUFETs were obtained by adjusting the p-pillar region. The structure of this SJ-ACCUFET was designed by using a two-dimensional simulator. The static characteristics of SJ-ACCUFET, such as the breakdown voltages, on-resistance, and figure of merits, were obtained by varying the p-pillar doping concentration from $1{\times}10^{15}cm^{-3}$ to $5{\times}10^{16}cm^{-3}$ and the thickness from $0{\mu}m$ to $9{\mu}m$. The doping concentration and the thickness of p-pillar region are closely related to the break down voltage and on-resistance and threshold voltages. Hence a silicon carbide SJ-ACCUFET structure with highly intensified breakdown voltages and low on-resistances with good figure of merits can be achieved by optimizing the p-pillar thickness and doping concentration.

• Animal Bioscience
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• 제34권7호
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• pp.1100-1104
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• 2021

Objective: The objective of present study was to estimate heritability of non-return rate (NRR) and success of first insemination (SFI) by using the Bayesian approach with Gibbs sampling. Methods: Heifer Traits were denoted as NRR-h and SFI-h, and cow traits as NRR-c and SFI-c. The variance covariance components were estimated using threshold model under Bayesian procedures THRGIBBS1F90. Results: The SFI was more relevant to evaluating success of insemination because a high percentage of animals that demonstrated no return did not successfully conceive in NRR. Estimated heritability of NRR and SFI in heifers were 0.032 and 0.039 and the corresponding estimates for cows were 0.020 and 0.027. The model showed low values of Geweke (p-value ranging between 0.012 and 0.018) and a low Monte Carlo chain error, indicating that the amount of a posteriori for the heritability estimate was valid for binary traits. Genetic correlation between the same traits among heifers and cows by using the two-trait threshold model were low, 0.485 and 0.591 for NRR and SFI, respectively. High genetic correlations were observed between NRR-h and SFI-h (0.922) and between NRR-c and SFI-c (0.954). Conclusion: SFI showed slightly higher heritability than NRR but the two traits are genetically correlated. Based on this result, both two could be used for early indicator for evaluate the capacity of cows to conceive.

• 한국잡초학회지
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• 제30권3호
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• pp.206-214
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• 2010

The laboratory and green house studies evaluated the effect of three different environmental factors on the seed germination, seedling emergence and survival of four major weed species in coconut plantations, Mimosa pudica, Ureana lobata, Panicum maximum and Pennisetum polystachyon. Germination percentage of all the weed species was significantly reduced with increasing soil moisture stress, no germination was observed at -0.9 MPa. Germination of both grass seeds ranged from 8% to 25% and 10% to 45% as moisture stress decreased from -0.4 MPa to 0 MPa, respectively. In contrast, seeds of M. pudica, and U. lobata were moderately tolerant to soil moisture stress and best adapted to moist environment. All the weed species seeds germinated over a wide range of soil pH values with the highest germination occurring at pH 6. In all the species, seedling emergence was declined rapidly with increasing depth with the exception of U. lobata. Seedling emergence significantly declined when the duration of flooding was three days or longer in dicotyledonous weed species and two days or longer in monocotyledonous weeds. This study illustrates the adaptability of these weeds to different environmental conditions which would enable the development of management strategies to reduce their populations below economic threshold levels in coconut plantations.

• 한국식품위생안전성학회지
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• 제33권1호
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• pp.71-76
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• 2018

노로바이러스는 전 세계적으로 산발적인 발병 관련 비세균성 위장염의 주요 원인 물질이다. 노로바이러스 검출을 위해 역전사 실시간 PCR (RT qPCR)이 그 민감도와 특이성으로 인해 주요 수단으로 빠르게 자리 잡았다. 그러나 RT qPCR 분석을 위해서는 정확한 바이러스 RNA 추출방법이 필수적이다. TRIzol 시약은 생물학적 물질로부터 RNA의 추출에 이용되고 따라서 노로바이러스 RNA 추출에도 널리 사용된다. 이 연구에서는 인체 노로바이러스 유전체 그룹 I (GI) 및 유전자 그룹 II (GII)와 생쥐 노로바이러스(GV) 중에서 GII로부터의 TRIzol 을 이용한 바이러스 RNA의 추출률이 바이러스 시료 용액의 pH에 의존했다는 내용이 다루어졌다. 실시간 PCR의 Ct값으로 비교한 RNA 추출 수율은 산성 영역보다 알칼리성 pH에서 높았다. 이 연구 결과로 부터 TRIzol을 이용하여 GII RNA를 추출하여 노로바이러스를 정량적으로 분석할 때 pH조건이 대단히 중요하다는 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.35-36
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

• 천문학회지
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• 제41권6호
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• pp.157-161
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• 2008

We have estimated the fractal dimension of the molecular clouds associated with the Hii region Sh 156 in the Outer Galaxy. We selected the $^{12}CO$ cube data from the FCRAO CO Survey of the Outer Galaxy. Using a developed code within IRAF, we identified slice-clouds (2-dimensional clouds in velocity-channel maps) with two threshold temperatures to estimate the fractal dimension. With the threshold temperatures of 1.8 K, and 3 K, we identified 317 slice-clouds and 217 slice-clouds, respectively. There seems to be a turn-over location in fractional dimension slope around NP (area; number of pixel) = 40. The fractal dimensions was estimated to be D = $1.5\;{\sim}\;1.53$ for $NP\;{\geq}\;40$, where $P\;{\propto}\;A^{D/2}$ (P is perimeter and A is area), which is slightly larger than other results. The sampling rate (spatial resolution) of observed data must be an important parameter when estimating fractal dimension. Fractal dimension is apparently invariant when varying the threshold temperatures applied to slice-clouds identification.