• Title/Summary/Keyword: p-type Si

검색결과 951건 처리시간 0.032초

Investigation of X-ray-induced Defects on Metals and Silicon by Using Coincidence Doppler Broadening Positron Annihilation Spectroscopy

  • Lee, C.Y.
    • Journal of the Korean Physical Society
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    • 제73권12호
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    • pp.1895-1898
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    • 2018
  • The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.

고주파 진공유도로로 제작한 p형 SiGe 합금의 열전변환물성 (The Thermoelectric Properties of p-type SiGe Alloys Prepared by RF Induction Furnace)

  • 이용주;배철훈
    • 한국세라믹학회지
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    • 제37권5호
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    • pp.432-437
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    • 2000
  • Thermoelectric properties of p-type SiGe alloys prepared by a RF inductive furnace were investigated. Non-doped Si80Ge20 alloys were fabricated by control of the quantity of volatile Ge. The carrier of p-type SiGe alloy was controlled by B-doping. B doped p-type SiGe alloys were synthesized by melting the mixture of Ge and Si containing B. The effects of sintering/annealing conditions and compaction pressure on thermoelectric properties (electrical conductivity and Seebeck coefficient) were investigated. For nondoped SiGe alloys, electrical conductivity increased with increasing temperatures and Seebeck coefficient was measured negative showing a typical n-type semiconductivity. On the other hand, B-doped SiGe alloys exhibited positive Seebeck coefficient and their electrical conductivity decreased with increasing temperatures. Thermoelectric properties were more sensitive to compaction pressure than annealing time. The highest power factor obtained in this work was 8.89${\times}$10-6J/cm$.$K2$.$s for 1 at% B-doped SiGe alloy.

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Fabrication and characterization of n-IZO / p-Si and p-ZnO:(In, N) / n-Si thin film hetero-junctions by dc magnetron sputtering

  • Dao, Anh Tuan;Phan, Thi Kieu Loan;Nguyen, Van Hieu;Le, Vu Tuan Hung
    • 전기전자학회논문지
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    • 제17권2호
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    • pp.182-188
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    • 2013
  • Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

다결정 3C-SiC 박막 다이오드의 전기적 특성 (Electrical characteristics of polycrystalline 3C-SiC thin film diodes)

  • 정귀상;안정학
    • 센서학회지
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    • 제16권4호
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    • pp.259-262
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    • 2007
  • This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

알칼리 금속을 도핑한 BaSi2의 p-type 특성 분석

  • 임재후;홍창호;이태훈;윤용
    • EDISON SW 활용 경진대회 논문집
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    • 제6회(2017년)
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    • pp.392-397
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    • 2017
  • 알칼리 금속을 도핑한 $BaSi_2$의 p-type 특성에 대하여 이해하기 위하여 density functional theory(DFT) 방법을 바탕으로 하는 결함 계산을 진행하였다. 우선 $BaSi_2$의 Si, Ba vacancies에 대해 계산을 진행하여서 도핑을 하지 않았을 때의 특성에 대해 이해해 보았다. 다음으로 알칼리 금속을 도핑한 구조의 p-type 특성과 비교 분석을 진행하기 위해서 잘 알려진 p-type dopants인 Al, In, Ag을 치환형으로 도핑한 구조의 특성에 대해 분석해 보았다. 마지막으로 알칼리 금속을 도핑하였을 때의 p-type 특성에 대해 계산해 보았고, K을 도핑하였을 때 잘 알려진 p-type dopants보다 더 나은 p-type 특성을 가질 수 있음을 보였다.

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다결정 3C-SiC 박막 다이오드의 제작 (Fabrication of polycrystalline 3C-SiC thin film diodes)

  • 안정학;정귀상
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.348-349
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    • 2007
  • This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

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HIT 층 두께 변화를 통한 태양전지 효율 특성 (The characteristics of Efficiency through HIT layer thickness)

  • 김무중;편진호;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2010년도 하계학술대회 논문집
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    • pp.232-232
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    • 2010
  • Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, under the intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. The structure of ITO, a-Si p-type, intrinsic a-Si, c-Si, intrinsic a-Si, a-Si n-type, metal (Al) layer has one of the seven. When thickness for each layer was given the change, the changes of a-Si p-type layer and the intrinsic a-Si layer on top had an impact on efficiency. Efficiency ratio of p-type a-Si:H layer thickness was sensitive to, especially a-Si: H layer thickness is increased in a rapid decrease in Jsc and FF, and efficiency was also decreased.

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자색광에 민감한 $SnO_2-SiO_2-Si$(n-p)형 광전지의 전기적광하적특성 (Electrical and Optical Properties of Violet-Sensitive $SnO_2-SiO_2-Si$(n-p) Type Photocell)

  • 김유신
    • 대한전자공학회논문지
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    • 제14권1호
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    • pp.15-22
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    • 1977
  • 자색광에 민감한 태양전지연구의 일환으로 우선 이러한 성질을 띤 광전지를 얻게 되었다. 이 광전지는 SnO2-SiO2-SiMOS와 Si n-p 동질접합이 결합된 구조로 되어 있다. 광전출력(0.25V, 150㎂)이 적어서 태양전지용은 못되지만 Si p-n 동질접합으로 된 태양전지에 비해서 분광감도가 자와선대쪽으로 이동되어 있고 switching 속도도 상당히 큰 고로 종래의 Si 광전지보다 더많은 새로운 용도를 찾아낼 수 있을 것으로 기대되고 있다.

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CST 승화법을 이용한 p-type 4H-SiC(0001) 에픽텍셜층 성장과 이를 이용한 MESFET 소자의 전기적 특성 (Epitaxial Layer Growth of p-type 4H-SiC(0001) by the CST Method and Electrical Properties of MESFET Devices with Epitaxially Grown Layers)

  • 이기섭;박치권;이원재;신병철
    • 한국전기전자재료학회논문지
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    • 제20권12호
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    • pp.1056-1061
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    • 2007
  • A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. The surface morphology was dramatically changed with varying the SiC/Al ratio. When the SiC/Al ratio of 90/1 was used, the step bunching was not observed in this magnification and the ratio of SiC/Al is an optimized range to grow of p-type SiC epitaxial layer. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. 4H-SiC MESFETs haying a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized. It was confirmed that the increase of the negative voltage applied on the gate reduced the drain current, showing normal operation of FET device.

Synthesis and characterization of silanized-SiO2/povidone nanocomposite as a gate insulator: The influence of Si semiconductor film type on the interface traps by deconvolution of Si2s

  • Hashemi, Adeleh;Bahari, Ali
    • Current Applied Physics
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    • 제18권12호
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    • pp.1546-1552
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    • 2018
  • The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.