• Proceedings of the Korean Vacuum Society Conference
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• 1994.02a
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• pp.76-77
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• 1994

• ETRI Journal
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• v.10 no.3
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• pp.242-246
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• 1988

반도체 소자에서 $N^+$ 접합에 이용되는 As 이온주입된 시편을 RBS(Rutherford backscattering spectrometry)법으로 분석하였다. Random 스펙트럼으로부터 $R_p$, $\DeltaR_p$, As의 최대농도를 구하고 channeled 스펙트럼으로부터 이온 주입에 의한 결정 손상층의 두께와 열처리 후 interstitial site에서 substitutional site로 치환된 As의 비를 구하였다.

• Microbiology and Biotechnology Letters
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• v.17 no.1
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• pp.51-55
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• 1989

The conjugally transferred TOL plasmid or NAH plasmid was stably maintained and expressed in n-alkane assimilating Pseudomonas putida KCTC 2405. However, these plasmids were not able to coexist in this strain because of incompatibility. The incompatibility of TOL and NAH plasmid was bypassed using CAM::TOL* plasmid, which was constructed by the transposition of only tol gene without incompatibility system in TOL plasmid into CAM plasmid. p. putida 3SK capable of growing on m-toluate, naphthalene, camphor, and n-alkane(C8-C24) was constructed by the conjugal transfer of NAH plasmid into n-alkane assimilating p. putida SK carrying CAM:: TOL* plasmid. CAM::TOL＊ plasmid in p. putida 3SK was stable on the selective media but unstable on the nonselective media.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.176-182
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• 1992

t-Stress and junction leakage current characteristics of CVD-tungsten have been investigated. Stressversus continuous annealing temperature plot. shows hysteresis curve where the stress level of the cooling curveis higher than that of the heating curve. It is found that the thermal and intrinsic stress of tungsten film depositedby SiH4 reduction is higher than that by Hz reduction.The tungsten film deposited by SiHl reduction is in the tensile stress state below 700"Cnd the stress ofthe film decreses with increasing annealing temperature. The stress state changes into compressive stress atabout 700"Cnd the compressive stress increases rapidly with increasing temperature.Leakage current of the n+/p diode increases rapidly especially in the range of 400-450$^{\circ}$C with increasingdeposition temperature of the CVD-W by SiH4 reduction, which is due to the Si consumption by W encroachment.On the other hand leakage current of the n+/p diode slightly increases with increasing SiH4/WF6 ratio.h increasing SiH4/WF6 ratio.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.6
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• pp.30-37
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• 1981

Numerical calculations have beee made of the effect of grain size on the three-dimensional carrier density, the quantum efficiency, and the AMI efficiency of 30$\mu$m polycrystalliue silicon p-n junction solar cells. Quantum efficiencies calculated for the polycrystalline silicon solar cells are compared to the monocrystalline cases. An efficiency of 12% can theoretically be obtained with grain size 100$\mu$m, and 6% for 5$\mu$m grains.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.226-231
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• 1999

Temperature dependence of effective ionization coefficients in GaAs is formulated as a single polynomial function of temperature, which allows analytical expressions for breakdown voltage of GaAs $p^+n$ junctions as a function of temperature. At 300 K, extracted effective ionization coefficient of GaAs $p^+n$ junction especially agrees well with the published result of <111> oriented GaAs. The analytic results agree with the simulation as well as the experimental ones reported within 10% in error for the doping concentrations in the range of $10_{14}cm_{-3}~10_{17}cm_{-3}$ at 100 K, 300 K and 500 K.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.9
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• pp.729-735
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• 1991

To form shallow $p^+$ -n junctions, Ge and As ions were employed for preamorphization, and B or BF2 was implanted for doping. Same B and BF$_2$ implantations were performed into single crystalline silicon to compare the material and electrical characteristics with the preamorphized samples. SIMS measurements for 10KeV B implanted samples revealed the somilar boron distribution for two preamophized cases, but the ASR profiles indicated that the shallower junctions could be formed by Ge preamorphzation. Sheet resostance of Ge preamorphized sample was lower than the As preamorphized sample, and the diode leakage current characteristics were similar for the preamorphized and non-preamorphized samples. Among the samples implanted with BF ions into the substrates preamorphized with 25keV Ge or As ions, high sheet resistance and leaky diode characteristics were observed for the As preamorphized samples. It was found that Ge preamorphization is more useful than As preamorphization for the purpose of forming shallow $p^+$ -n junctions using low energy BF$_2$ implantation.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.487-492
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• 2002

The growth kinetics of intermetallic compound layers formed between eutectic Sn-58Bi solder and (Cu, electroless Ni-P/Cu) substrate were investigated at temperature between 70 and 120 C for 1 to 60 days. The layer growth of intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P system satisfied the parabolic law at given temperature range. As a whole, because the values of time exponent (n) have approximately 0.5, the layer growth of the intermetallic compound was mainly controlled by volume diffusion over the temperature range studied. The apparent activation energies of Cu$_{6}$Sn$_{5}$ and Ni$_3$Sn$_4$ intermetallic compound in the couple of the Sn-58Bi/Cu and Sn-58Bi/electroless Ni-P were 127.9 and 81.6 kJ/mol, respectively.ely.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.77-77
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• 1999

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.349-352
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• 2001

In this paper, novel device structure in order to realize ultra fast and ultra small silicon devices are investigated using ultra-high vacuum chemical vapor deposition(UHVCVD) and Excimer Laser Annealing (ELA) for ultra pn junction formation. Based on these fundamental technologies for the deep sub-micron device, high speed and low power devices can be fabricated. These junction formation technologies based on damage-free process for replacing of low energy ion implantation involve solid phase diffusion and vapor phase diffusion. As a result, ultra shallow junction depths by ELA are analyzed to 10~20 nm for arsenic dosage (2$\times$10$^{14}$ $\textrm{cm}^2$), excimer laser source(λ=248nm) is KrF, and sheet resistances are measured to 1k$\Omega$/$\square$ at junction depth of 15nm.