• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.98-98
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• 1998

• Journal of the Korean Mathematical Society
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• v.47 no.2
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• pp.235-246
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• 2010

A Banach space operator A $\in$ B(X) is polaroid if the isolated points of the spectrum of A are poles of the resolvent of A; A is hereditarily polaroid, A $\in$ ($\mathcal{H}\mathcal{P}$), if every part of A is polaroid. Let $X^n\;=\;\oplus^n_{t=i}X_i$, where $X_i$ are Banach spaces, and let A denote the class of upper triangular operators A = $(A_{ij})_{1{\leq}i,j{\leq}n$, $A_{ij}\;{\in}\;B(X_j,X_i)$ and $A_{ij}$ = 0 for i > j. We prove that operators A $\in$ A such that $A_{ii}$ for all $1{\leq}i{\leq}n$, and $A^*$ have the single-valued extension property have spectral properties remarkably close to those of Jordan operators of order n and n-normal operators. Operators A $\in$ A such that $A_{ii}$ $\in$ ($\mathcal{H}\mathcal{P}$) for all $1{\leq}i{\leq}n$ are polaroid and have SVEP; hence they satisfy Weyl's theorem. Furthermore, A+R satisfies Browder's theorem for all upper triangular operators R, such that $\oplus^n_{i=1}R_{ii}$ is a Riesz operator, which commutes with A.

• Journal of applied mathematics & informatics
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• v.41 no.6
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• pp.1193-1207
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• 2023

In this paper, we introduce an iP₂ extension of a star graph S_n for n ≥ 2 and 1 ≤ i ≤ n - 1. Certain general properties satisfied by order, size, domination (or Roman) numbers γ (or γ_R) of an iP₂ extended star graph are studied. Finally, we study how the parameters such as chromatic number and harmonious chromatic number are affected when an iP₂ extension process acts on the star graphs.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.230-230
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• 2013

In amorphous or microcrystalline thin-film silicon solar cells, p-i-n structure is used instead of p/n junction structure as in wafer-based Si solar cells. Hence, these p-i-n structured solar cells inevitably consist of many interfaces and the cell efficiency critically depends on the effective control of these interfaces. In this study, in-situ plasma treatment process of the interfaces was developed to improve the efficiency of a-Si:H solar cell. The p-i-n cell was deposited using a single-chamber VHF-PECVD system, which was driven by a pulsed-RF generator at 80 MHz. In order to solve the cross-contamination problem of p-i layer, high RF power was applied without supplying SiH4 gas after p-layer deposition, which effectively cleaned B contamination inside chamber wall from p-layer deposition. In addition to the p-i interface control, various interface control techniques such as thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, multiple applications of thin i-layer deposition and H2 plasma treatment, H2 plasma treatment of i-layer prior to n-layer deposition, etc. were developed. In order to reduce the reflection at the air-glass interface, anti-reflective SiO2 coating was also adopted. The initial solar cell efficiency over 11% could be achieved for test cell area of 0.2 $cm^2$.

• YAKHAK HOEJI
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• v.41 no.5
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• pp.582-587
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• 1997

The 6.7-dichloroquinoline-5,8-dione (I) was reacted with ethyl acetoacetate in the presence of sodium ethoxide to yield 6-(${\alpha}$-acetyl-${\alpha}$-ethoxycarbonyl methyl)-7-chloro-qui noline-5,8-dione(II). When this compound II was reacted with some arylamine (phenyl, p-toluyl, p-fluorophenyl, p-chlorophenyl. p-bromophenyl, p-iodophenyl, p-trifluoromethylphenyl, p-dimethylaminophenyl,indanyl), 1N-aryl-2-methyl-3-ethoxycarbonyl pyridino[2,3-f]-indole-4.9-dione(IIIa-I) were obtained via intramolecular cyclization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.906-911
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• 2004

In this paper, we used only PR as etching mask, while it used usually Cr/AU as etching mask, and in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. we designed microchannel size width max 10um, min 5um depth max 10um, reservoir size max 100um, min 2mm. Fabrication of microfluidic devices in glass substrate by glass wet etching methods and glass to glass fusion bonding. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive($4k{\Omega}{\cdot}cm$) wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571\Omega$ to $393\Omega$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.100-103
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• 2003

Signal detection technologies such as fluorescence, charge and electrochemical detection used in the monolithic capillary electrophoresis system to convert the biochemical reaction into the electrical signal. The fluorescence detection using photodiodes that measure fluorescence emitted from eluting molecules is widely used for the monolithic capillary electrophoresis system. In this paper, in order to fabricate a photosensor has the increased sensitivity, we investigated on the sensitivity of general type and p-i-n type diode. The p-i-n diode has higher sensitivity than photodiode. Considering these results, we fabricated p-i-n diodes on the high resistive$(4k{\Omega}{\cdot}cm)$ wafer into rectangle and finger pattern and compared internal resistance of each pattern. The internal resistance of p-i-n diode can be decreased by the application of finger pattern has parallel resistance structure from $571{\Omega}$ to $393{\Omega}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.394.1-394.1
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• 2014

고효율 및 낮은 구동 전압을 가지는 유기 발광소자를 제작하기 위한 많은 연구가 진행되고 있다. 고효율 및 낮은 구동전압을 가지는 p-i-n 유기발광소자는 정공수송층에 p형 무기 도펀트를 도핑하고, 전자수송층에 n형 무기 도펀트를 사용하여 제작하지만, 무기 도펀트는 높은 온도에서 증착하기 때문에 챔버 내의 다른 유기 물질들이 함께 증착되거나 유기 박막에 손상을 가져올 수 있는 단점을 가지고 있기 때문에 유기물 n형 도펀트의 경우는 연구가 필요하다. 본 연구에서는 유기 p형 도펀트인 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile과 유기 n형 도펀트인 bis (ethylenedithio)-tetrahiafulene (BEDT-TTF)를 사용하여 p-i-n 구조의 유기 발광소자를 제작하였다. 유기 n형 도펀트인 BEDT-TTF는 전자수송층 사이에서 산화-환원 반응을 통해 많은 전자를 생성하게 되고, 증가한 전자들로 인해서 Al 음극전극과 전자수송층 사이의 에너지장벽이 낮추는 역할을 하게 된다. BEDT-TTF를 도핑하지 않은 유기 발광소자보다 BEDT-TTF를 도핑하였을 때, 100 cd/m2 일때 약 2.4 V 작동 전압의 감소를 관측할 수 있었다. 이 결과는 음극전극으로부터 발광층으로 전자의 주입이 원활하게 되고, 그 결과 낮은 구동전압 및 고효율을 가지는 p-i-n 유기 발광소자를 제작할 수 있다는 것을 보여준다.

• Journal of the Korean Mathematical Society
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• v.47 no.6
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• pp.1147-1165
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• 2010

In this paper we compare a torsion free sheaf F on $P^N$ and the free vector bundle $\oplus^n_{i=1}O_{P^N}(b_i)$ having same rank and splitting type. We show that the first one has always "less" global sections, while it has a higher second Chern class. In both cases bounds for the difference are found in terms of the maximal free subsheaves of F. As a consequence we obtain a direct, easy and more general proof of the "Horrocks' splitting criterion", also holding for torsion free sheaves, and lower bounds for the Chern classes $c_i$(F(t)) of twists of F, only depending on some numerical invariants of F. Especially, we prove for rank n torsion free sheaves on $P^N$, whose splitting type has no gap (i.e., $b_i{\geq}b_{i+1}{\geq}b_i-1$ 1 for every i = 1,$\ldots$,n-1), the following formula for the discriminant: $$\Delta(F):=2_{nc_2}-(n-1)c^2_1\geq-\frac{1}{12}n^2(n^2-1)$$. Finally in the case of rank n reflexive sheaves we obtain polynomial upper bounds for the absolute value of the higher Chern classes $c_3$(F(t)),$\ldots$,$c_n$(F(t)) for the dimension of the cohomology modules $H^iF(t)$ and for the Castelnuovo-Mumford regularity of F; these polynomial bounds only depend only on $c_1(F)$, $c_2(F)$, the splitting type of F and t.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1898-1900
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• 1999

The possible origins of instabilities observed in high-voltage p-i-n devices were investigated. It was concluded that the temporary changes of electrical characteristics may be due to the changes of the physical parameters of gold acceptor, while the permanent changes are due to process-related factors.