• Journal of the Korean Chemical Society
• /
• v.49 no.6
• /
• pp.560-566
• /
• 2005

Sintered ceramic samples of pure and some copper doped layered sodium lithium tri-titanate ($Na_{1.9}Li_{0.1}Ti_{3-X}Cu_XO_{7-X}$) materials with different dopant molar percentages (0.0$Cu^{2+}$ at $Ti^{4+}$ sites in the lattice is proposed in this paper. Furthermore, three distinct regions have been identified in log(${\sigma}_{d.c.}T$) versus 1000/T plots. The lowest temperature region is attributed to electronic hopping conduction(polaron) for all copper doped derivatives and ionic conduction for lithium substituted $Na_2Ti_3O_7$.The mechanism of conduction in the intermediate region is associated interlayer ionic conduction and in the highest temperature region is associated modified interlayer ionic conduction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.8
• /
• pp.665-670
• /
• 2009

Lead-free piezoelectric ($Na_{1/2}K_{1/2}$)$NbO_3$ ceramics doped with CuO and $MnO_2$ were fabricated using the conventional oxide-mixing technique. With increasing content of CuO and $MnO_2$, the dielectric constant(${\varepsilon}_{33}$) and mechanical quality factor($Q_m$) value increased, while electromechanical coupling factor($K_p$) and piezoelectric constant($d_{33}$) decreased. The piezoelectric and dielectric properties ($Na_{1/2}K_{1/2}$)$NbO_3$ ceramics doped with CuO 2.461 wt% and $MnO_2$ 0.538 wt% at sintered temperature $1050\;^{\circ}C$ were attained ${\varepsilon}_{33}$ = 403, $K_p$ = 15, $Q_m$ = 122 and $d_{33}$ = 36 pC/N. Based on response surface methodology results using design of experiment, it was concluded that ($Na_{1/2}K_{1/2}$)$NbO_3$ doped with CuO 0.477 wt% and $MnO_2$ 0.269 wt% has possibility composition of being used for piezoelectric transformer.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1223-1224
• /
• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.154-155
• /
• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean Chemical Society
• /
• v.42 no.6
• /
• pp.618-628
• /
• 1998

Pure CaO, Mn-doped CaO, Mn/CaO, and K/CaO catalysts were prepared and tested as catalysts for the oxidative coupling of methane in the temperature range of 600 to 800$^{\circ}C$ to investigate the effects of Mn- and K-addition on the catalytic activity of calcium oxide. To characterize the catalysts, X-ray powder diffraction(XRD), XPS, SEM, DSC, and TG analyses were performed. The catalytic reaction was carried out in a single-pass flow reactor using on-line gas chromatography system. Normalized reaction conditions were generally $p(CH_4)/p(O_2)=250$ Torr/50 Torr, total feed flow rate=30 mL/min, and 1 atm of total pressure with He being used as diluent gas. Among the catalysts tested, 6.3 mol% Mn-doped CaO catalyst showed the best $C_2$ yield of 8.0% with a selectivity of 43.2% at 775$^{\circ}C$. The $C_2$ selectivity increased on lightly doped CaO catalysts, while decreased on heavily doped CaO([Mn] > 6.3 mol%) catalysts. 6 wt.% Mn/CaO and 6 wt.% K/CaO catalysts showed the $C_2$ selectivities of 13.2% and 30.9%, respectively, for the reaction. Electrical conductivities of CaO and Mn-doped CaO were measured in the temperature range of 500 to 1000$^{\circ}C$ at Po2's of $10^{-3}\; to\;10^{-1}\;atm.$ The electrical conductivity was decreased with Mn-doping and increased with increasing $P0_2$in the range of $10^{-3}\;to\;10^{-1}\;atm,$ indicating the specimens to be p-type semiconductors. It was suggested that the interstitial oxygen ions formed near the surface can activate methane and the formation of interstitial oxygen ions was discussed on the basis of solid-state chemistry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.140-140
• /
• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Journal of Korean Vacuum Science & Technology
• /
• v.4 no.3
• /
• pp.73-77
• /
• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• Proceedings of the IEEK Conference
• /
• 2008.06a
• /
• pp.387-388
• /
• 2008

In this paper, we have designed and fabricated hyperabrupt varactor diodes. Capacitance variations of hyperabrupt-doped varactor diodes are larger than those of uniform-doped varactor diodes. The measured reverse breakdown voltage of the fabricated varactor diodes was about 20 V. For the anode contact diameter of $50\;{\mu}m$, the maximum capacitance of the fabricated varactor diode was 2.1 pF and the minimum capacitance 0.44 pF. Therefore, the $C_{max}/C_{min}$ ratio was 4.77. Also, for the anode contact diameter of $60\;{\mu}m$, the maximum and minimum capacitances were 2.9 and 0.62 pF, respectively. And, thus, the $C_{max}/C_{min}$ ratio was 4.64.

• Applied Science and Convergence Technology
• /
• v.24 no.6
• /
• pp.268-272
• /
• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.7
• /
• pp.1042-1048
• /
• 1990

The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.