Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Study of Design and Fabrication of GaAs Varactor diode

GaAs 버렉터 다이오드의 설계와 제작에 관한 연구

  • Choi, Seok-Gyu (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
  • Baek, Young-Hyun (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
  • Beak, Tea-Jong (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
  • Kim, Mi-Ra (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University) ;
  • Rhee, Jin-Koo (Millimeter-Wave Innovation Research Center, Electronic Engineering Department, Dongguk University)
  • 최석규 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
  • 백용현 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
  • 백태종 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
  • 김미라 (동국대학교 전자공학과 밀리미터 신기술 연구센터) ;
  • 이진구 (동국대학교 전자공학과 밀리미터 신기술 연구센터)
  • Published : 2008.06.18
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Abstract

In this paper, we have designed and fabricated hyperabrupt varactor diodes. Capacitance variations of hyperabrupt-doped varactor diodes are larger than those of uniform-doped varactor diodes. The measured reverse breakdown voltage of the fabricated varactor diodes was about 20 V. For the anode contact diameter of $50\;{\mu}m$, the maximum capacitance of the fabricated varactor diode was 2.1 pF and the minimum capacitance 0.44 pF. Therefore, the $C_{max}/C_{min}$ ratio was 4.77. Also, for the anode contact diameter of $60\;{\mu}m$, the maximum and minimum capacitances were 2.9 and 0.62 pF, respectively. And, thus, the $C_{max}/C_{min}$ ratio was 4.64.

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