• 제목/요약/키워드: p-doped

검색결과 801건 처리시간 0.027초

Sm 농도에 따른 무연 3상 유리계의 합성과 물리적 성질 (Synthesis and Physical Properties of Sm Doped Pb Free 3 Phase-Glasses)

  • 박종호
    • 한국재료학회지
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    • 제22권7호
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    • pp.368-373
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    • 2012
  • Glasses were prepared with compositions of $(13-x)BaO-80B2_O_3-7Li_2O{\cdot}xSm_2O_3$, BBLSx(x=0.5, 0.4, 0.3) by melting the starting materials of boron oxide(99.9%), lithium oxide(99.9%), barium carbon oxide(99.9%), and samarium oxide(99.9%) and then quenching the melt at $1350^{\circ}C$. This led to good-quality BBLSx(x=0.4, 0.3) and poor-quality BBLSx(x=0.5) glasses. The physical and structural properties of the BBLSx glasses were studied by means x-ray diffraction, scanning electron microscopy(SEM), differential scanning calorimetry(DSC), and dielectric spectroscopy. From the x-ray diffraction and SEM results, the quality of the BBLSx glasses significantly depends on the $Sm_2O_3$ concentration. The x-ray diffraction pattern showed that the crystallites in the BBLSx glasses after heat treatment at $700^{\circ}C$ may be $LiBaB_9O_{15}$. From the DSC results, the glass transition temperatures($T_g$), crystallization temperatures($T_c$), and the maximum temperatures of the crystallized($T_p$) BBLSx glasses all changed with the $Sm_2O_3$ concentration. According to the dielectric spectroscopy results, the values of the real dielectric constant and Tan ${\delta}$ of the BBLSx glasses depended on the $Sm_2O_3$ concentration. The values of the real dielectric constant and Tan ${\delta}$ were also shown to depend on the measuring temperature, possibly due to the ion migration in the bulk of the BBLSx glasses.

Germanium-based pinning dopants for MgB2 bulk superconductors

  • Chung, K.C.;Ranot, M.;Shinde, K.P.;Oh, Y.S.;Kang, S.H.;Jang, S.H.;Hwang, D.Y.
    • 한국초전도ㆍ저온공학회논문지
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    • 제21권2호
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    • pp.36-39
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    • 2019
  • Effects of the spherically shaped Ge and the rod-like carbon-coated Ge on the superconducting properties of $MgB_2$ were investigated. Pure Ge and carbon-coated Ge nano-powders were synthesized under the different amount of $CH_4$ (0 to 5 kPa) by using DC thermal plasma method. When the $CH_4$ was added ~100 nm sized Ge with a spherical shape changed to rod-like morphology with a diameter of ~30-70 nm and a length of ~400-500 nm. Also it was confirmed that thin carbon layers of a few nanometers were formed along the rod length and the agglomerated carbons were found on the edges of rods. Pure spherical Ge and Ge/C rods were mixed and milled with Mg & B precursor to form the doped $MgB_2$ bulk samples by the solid-state reaction method. Almost no change of $T_c$ was noticed for the pure Ge-added $MgB_2$, whereas $T_c$ was found to decrease with the Ge/C-added $MgB_2$ samples. It was found that the pure spherical Ge showed to have a negative effect on the flux pinning of $MgB_2$. However, Ge/C rods can enhance the flux pinning property of $J_c$ due to the coated carbon on Ge rods.

Electrical Conductivity of the Solid Solutions X $ZrO_2+ (1-X) Yb_2O_3; 0.01{\leq}X{\leq}0.09$

  • Choi Byoung Ki;Jang Joon Ho;Kim, Seong Han;Kim, Hong Seok;Park, Jong Sik;Kim Yoo Young;Kim, Don;Lee Sung Han;Yo Chul Hyun;Kim Keu Hong
    • Bulletin of the Korean Chemical Society
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    • 제13권3호
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    • pp.248-252
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    • 1992
  • $ZrO_2-dopedYb_2O_3solid$ solutions containing 1, 3, 5, 7 and 9 mol% $ZrO_2were$ synthesized from spectroscopically pure $Yb_2O_3$ and $ZrO_2$ powders and found to be rare earth C-type structure by XRD technique. Electrical conductivities were measured as a function of temperatures from 700 to $1050^{\circ}C$ and oxygen partial pressures from 1${\times}$$10^-5$ to 2${\times}$ $10^-1$atm. The electrical conductivities depend simply on temperature and the activation energies are determined to be 1.56-1.68 $_eV$. The oxygen partial pressure dependence of the electrical conductivity shows that the conductivity increases with increasing oxygen partial pressure, indicating p-type semiconductor. The $PO_2$ dependence of the system is nearly power of 1/4. It is suggested from the linearity of the temperature dependence of electrical conductivity and only one value of 1/n that the solid solutions of the system have single conduction mechanism. From these results, it is concluded that the main defects of the system are negatively doubly charged oxygen interstitial in low. $ZrO_2doping$ level and negatively triply charged cation vacancy in high doping level and the electrical conduction is due to the electronic hole formed by the defect structure.

Physics-based modelling and validation of inter-granular helium behaviour in SCIANTIX

  • Giorgi, R.;Cechet, A.;Cognini, L.;Magni, A.;Pizzocri, D.;Zullo, G.;Schubert, A.;Van Uffelen, P.;Luzzi, L.
    • Nuclear Engineering and Technology
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    • 제54권7호
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    • pp.2367-2375
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    • 2022
  • In this work, we propose a new mechanistic model for the treatment of helium behaviour at the grain boundaries in oxide nuclear fuel. The model provides a rate-theory description of helium inter-granular behaviour, considering diffusion towards grain edges, trapping in lenticular bubbles, and thermal resolution. It is paired with a rate-theory description of helium intra-granular behaviour that includes diffusion towards grain boundaries, trapping in spherical bubbles, and thermal re-solution. The proposed model has been implemented in the meso-scale software designed for coupling with fuel performance codes SCIANTIX. It is validated against thermal desorption experiments performed on doped UO2 samples annealed at different temperatures. The overall agreement of the new model with the experimental data is improved, both in terms of integral helium release and of the helium release rate. By considering the contribution of helium at the grain boundaries in the new model, it is possible to represent the kinetics of helium release rate at high temperature. Given the uncertainties involved in the initial conditions for the inter-granular part of the model and the uncertainties associated to some model parameters for which limited lower-length scale information is available, such as the helium diffusivity at the grain boundaries, the results are complemented by a dedicated uncertainty analysis. This assessment demonstrates that the initial conditions, chosen in a reasonable range, have limited impact on the results, and confirms that it is possible to achieve satisfying results using sound values for the uncertain physical parameters.

탄소나노튜브 대면적 어셈블리를 통한 고감도-고선택성 과산화수소 센서 개발 (Highly sensitive and selective enzymatic detection for hydrogen peroxide using a non-destructively assembled single-walled carbon nanotube film)

  • 이동욱;안희호;서병관;이승우
    • 센서학회지
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    • 제30권4호
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    • pp.229-235
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    • 2021
  • This study presents a simple approach for the assembly of a free-standing conductive electronic nanofilm of single-walled carbon nanotubes (SWNTs) suitable for enzymatic electrochemical biosensors. A large-scale SWNT electronic film was successfully produced by the dialysis of p-Terphenyl-4,4''-dithiol (TPDT)-treated SWNTs. Furthermore, Horseradish peroxidase (HRP) was immobilized on the TPDT-SWNT electronic film, and the enzymatic detection of hydrogen peroxide (H2O2) was demonstrated without mediators. The detection of H2O2 in the negative potential range (-0.4 V vs. Ag/AgCl) was achieved by direct electron transfer of heme-based enzymes that were immobilized on the TPDT-SWNT electronic film. The SWNT-based biosensor exhibited a wide detection range of H2O2 from 10 µM to 10 mM. The HRP-doped SWNT electronic film achieved a high sensitivity of 342 ㎛A/mM·cm2 and excellent selectivity against a variety of redox-active interfering substances, such as ascorbic acid, uric acid, and acetaminophen.

플루오린 함량 제어를 통한 LiVPO4O1-xFx 합성 및 리튬 이차전지 양극소재 전기화학 특성 분석 (Synthesis and Investigation of LiVPO4O1-xFxvia Control of the Fluorine Content for Cathode of Lithium-ion Batteries)

  • 김민경;이동휘;여찬규;최수연;최치원;윤현민
    • 한국분말재료학회지
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    • 제30권6호
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    • pp.516-520
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    • 2023
  • Highly safe lithium-ion batteries (LIBs) are required for large-scale applications such as electrical vehicles and energy storage systems. A highly stable cathode is essential for the development of safe LIBs. LiFePO4 is one of the most stable cathodes because of its stable structure and strong bonding between P and O. However, it has a lower energy density than lithium transition metal oxides. To investigate the high energy density of phosphate materials, vanadium phosphates were investigated. Vanadium enables multiple redox reactions as well as high redox potentials. LiVPO4O has two redox reactions (V5+/V4+/V3+) but low electrochemical activity. In this study, LiVPO4O is doped with fluorine to improve its electrochemical activity and increase its operational redox potential. With increasing fluorine content in LiVPO4O1-xFx, the local vanadium structure changed as the vanadium oxidation state changed. In addition, the operating potential increased with increasing fluorine content. Thus, it was confirmed that fluorine doping leads to a strong inductive effect and high operating voltage, which helps improve the energy density of the cathode materials.

소결온도와 B2O3첨가량에 따른 Mn첨가 PMN-PZT의 유전 및 압전특성의 변화 (Dielectric/piezoelectric Properties of Mn-Doped PMN-PZT with Variations of the Sintering Temperature and Addition of B2O3)

  • 신효순
    • 한국세라믹학회지
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    • 제41권9호
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    • pp.709-714
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    • 2004
  • 우수한 압전 특성을 나타내는 것으로 알려진 Mn 첨가 PMN-PZT의 저온소결 첨가제가 실험되었다. 저온소결 첨가제로는 B$_2$O$_3$가 사용되었고 소결온도와 B$_2$O$_3$ 첨가량의 변화가 소결성과 유전 및 압전특성의 변화에 미치는 영향을 조사하였다. B$_2$O$_3$ 첨가량과 소결온도를 변화시킨 결과 B$_2$O$_3$ 첨가량 2wt% 이하 100$0^{\circ}C$이하 조건에서 소결밀도가 증가하여 B$_2$O$_3$가 저온소결재로 작용하였다. 그러나 10$50^{\circ}C$ 이상에서는 주조성인 PMN-PZT보다 낮은 소결밀도를 나타내었다. B$_2$O$_3$ 첨가에 따른 유전상수($\varepsilon$$_{33}$ $^{T}$ )의 변화를 확인할 결과 B$_2$O$_3$ 2wt% 100$0^{\circ}C$ 조건에서 1000의 유전율을 나타내었다. B$_2$O$_3$ 첨가량이 전기-기계 결합계수(k$_{p}$ )와 압전상수(d$_{33}$ )에 큰 저하를 가져오지 않는 B$_2$O$_3$ 첨가 한계는 2wt% 이하로 나타났다. 이때, k$_{p}$ 는 약 50%, d$_{33}$ 는 약 300(${\times}$$10^{-12}$ C/N) 정도의 값을 얻을 수 있었다. B$_2$O$_3$ 첨가는 기계적 품질계수(Q$_{m}$ )의 증가를 가져왔으며 0.5wt% B$_2$O$_3$ 첨가 110$0^{\circ}C$ 소결 조건에서 1700의 품질계수를 나타내었다. 유전손실은 B$_2$O$_3$ 첨가에 따라 큰 변화 없이 0.5% 이하의 값으로 나타났다.

Solution Processed Porous Fe2O3 Thin Films for Solar-Driven Water Splitting

  • Suryawanshi, Mahesh P.;Kim, Seonghyeop;Ghorpade, Uma V.;Suryawanshi, Umesh P.;Jang, Jun Sung;Gang, Myeng Gil;Kim, Jin Hyeok;Moon, Jong Ha
    • 한국재료학회지
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    • 제27권11호
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    • pp.631-635
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    • 2017
  • We report facile solution processing of mesoporous hematite (${\alpha}-Fe_2O_3$) thin films for high efficiency solar-driven water splitting. $Fe_2O_3$ thin films were prepared on fluorine doped tin oxide(FTO) conducting substrates by spin coating of a precursor solution followed by annealing at $550^{\circ}C$ for 30 min. in air ambient. Specifically, the precursor solution was prepared by dissolving non-toxic $FeCl_3$ as an Fe source in highly versatile dimethyl sulfoxide(DMSO) as a solvent. The as-deposited and annealed thin films were characterized for their morphological, structural and optical properties using field-emission scanning electron microscopy(FE-SEM), X-ray diffraction(XRD), X-ray photoelectron spectroscopy(XPS) and UV-Vis absorption spectroscopy. The photoelectrochemical performance of the precursor (${\alpha}-FeOOH$) and annealed (${\alpha}-Fe_2O_3$) films were characterized and it was found that the ${\alpha}-Fe_2O_3$ film exhibited an increased photocurrent density of ${\sim}0.78mA/cm^2$ at 1.23 V vs. RHE, which is about 3.4 times higher than that of the ${\alpha}-FeOOH$ films ($0.23mA/cm^2$ at 1.23 V vs. RHE). The improved performance can be attributed to the improved crystallinity and porosity of ${\alpha}-Fe_2O_3$ thin films after annealing treatment at higher temperatures. Detailed electrical characterization was further carried out to elucidate the enhanced PEC performance of ${\alpha}-Fe_2O_3$ thin films.

Control of Graphene's Electrical Properties by Chemical Doping Methods

  • Lee, Seung-Hwan;Choi, Min-Sup;La, Chang-Ho;Yoo, Won-Jong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.119-119
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    • 2011
  • This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.

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산소 결핍된 TiO2-δ:Ni 박박의 자기적 성질 연구 (Study on Magnetic Properties of TiO2-δ:Ni Thin Films)

  • 박영란;김광주;김철성
    • 한국자기학회지
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    • 제16권3호
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    • pp.168-172
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    • 2006
  • 졸-겔(sol-gel) 방법을 이용하여 제작된 산소결핍(oxygen vacancy)들을 내포하는 Ni 도핑된 루타일(rutile) 구조의 $TiO_{2-{\delta}}$ 박막들에 대하여 그 자기적 성질 및 관련된 전자구조적 성질에 대하여 조사분석 하였다. $TiO_{2-{\delta}}$:Ni 박막들에서 상온 강자성이 관측되었으며 Ni 도핑량이 증가할수록 포화 자화량($M_s$)이 점차 감소하여 6 at% 이상에서 일정한 값으로 유지되었다. 이와 같은 Ni 도핑량 6 at% 이하에서의 강자성 현상은 산소결핍 자리에 속박된 전자를 매개로 그 주위에 존재하는 불순물 이온들의 자기 능률들이 강자성 정렬을 이루게 되는 자기 폴라론(magnetic polaron)의 형성에 의한 것으로 해석된다. 소량의 Ni 도핑 시 각 이온당 최대 $3.7{\mu}_B/Ni$의 큰 $M_s$ 값이 나타났으며 6 at% 이상에서의 일정한 $M_s$ 값은 Ni cluster 형성에 의한 것으로 해석된다. 이와 같은 Ni cluster의 존재는 시료들에 대한 Hall 측정 결과 나타난 Ni 도핑량 증가에 따르는 p-n 전도성 전이를 설명하여 줄 수 있다.