• 대한화학회지
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• 제49권6호
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• pp.560-566
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• 2005

순수한 또는 미량의 구리(몰 퍼센트(0.0$Na_{1.9}Li_{0.1}Ti_{3-X}Cu_XO_{7-X}$) 물질을 합성하였다. 상온에서 모든 구리 혼입 유도체와 다양한 낮은 온도에서 0.05몰 퍼센트 Cu 혼입 유도체의 EPR 특성을 조사하였다. 격자 안의 $Ti^{4+}$자리에 $Cu^{2+}$가 치환됨으로 인한 TiO6 팔면체의 찌그러짐이 나타났다. 또한, log(${\sigma}_{d.c.}T$) 대 1000/T 그래프를 통하여 세개의 특징적인 영역이 관찰되어진다. 가장 낮은 온도 영역은 모든 구리 혼입 유도체의 polaron 과 Li이 치환된 $Na_2Ti_3O_7$의 이온 전도도에 기인한다. 중간 온도영역의 전도 메커니즘은 관련된 층간의 이온 전도도에 기인하며 가장 높은 온도 영역에서는 변형된 층간 이온 전도도에 기인한다.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.665-670
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• 2009

Lead-free piezoelectric ($Na_{1/2}K_{1/2}$)$NbO_3$ ceramics doped with CuO and $MnO_2$ were fabricated using the conventional oxide-mixing technique. With increasing content of CuO and $MnO_2$, the dielectric constant(${\varepsilon}_{33}$) and mechanical quality factor($Q_m$) value increased, while electromechanical coupling factor($K_p$) and piezoelectric constant($d_{33}$) decreased. The piezoelectric and dielectric properties ($Na_{1/2}K_{1/2}$)$NbO_3$ ceramics doped with CuO 2.461 wt% and $MnO_2$ 0.538 wt% at sintered temperature $1050\;^{\circ}C$ were attained ${\varepsilon}_{33}$ = 403, $K_p$ = 15, $Q_m$ = 122 and $d_{33}$ = 36 pC/N. Based on response surface methodology results using design of experiment, it was concluded that ($Na_{1/2}K_{1/2}$)$NbO_3$ doped with CuO 0.477 wt% and $MnO_2$ 0.269 wt% has possibility composition of being used for piezoelectric transformer.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1223-1224
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• 2006

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})$Te functional gradient material (FGM) was fabricated by hot-pressing the mechanically alloyed $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ powders. Also, the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM was processed by hot-pressing the mechanically alloyed $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe powders. With ${\Delta}T$ larger than $300^{\circ}C$, the p-type $(Bi_{0.2}Sb_{0.8})_2Te_3/(Pb_{0.7}Sn_{0.3})Te$ FGM exhibited larger thermoelectric output power than those of the $(Bi_{0.2}Sb_{0.8})_2Te_3$ and the 0.5 at% $Na_2Te-doped$ $(Pb_{0.7}Sn_{0.3})Te$ alloys. For the n-type $Bi_2(Te_{0.9}Se_{0.1})_3/PbTe$ FGM, the thermoelectric output power superior to those of the $Bi_2(Te_{0.9}Se_{0.1})_3$ and the 0.3 wt% Bi-doped PbTe was predicted at ${\Delta}T$ larger than $300^{\circ}C$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• 대한화학회지
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• 제42권6호
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• pp.618-628
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• 1998

순수한 CaO, Mn-doped CaO, Mn/CaO, K/CaO 촉매를 제조하고 이들의 메탄 활성화반응에 대한 촉매활성을 600∼800$^{\circ}C$ 온도영역에서 실험하여 산화칼슘의 촉매활성에 대한 망간과 칼륨의 첨가효과를 조사하였다. 촉매의 특성을 조사하기 위하여 X-선 분말회절분석(XRD), X-선 광전자분석(XPS), 주사전자현미경분석(SEM), 시차열분석(DSC) 및 열무게분석(TG)을 실시하였다. 촉매반응은 직결 기체크로마토그래피를 이용한 단방향 흐름 반응기로서 이루어졌다. 표준반응조건은 $p(CH_4)/p(O_2)=250$ Torr/50 Torr이며 반응기체의 주입속도는 30mL/min, 그리고 He 희석기체와 함께 전체압력은 1 atm이였다. 실험한 촉매들 중에서 6.3 mol% Mn-doped CaO 촉매가 가장 우수한 $C_2$ 선택성을 보였으며 775$^{\circ}C$에서 $C_2$ 선택성과 $C_2$ 수율이 각각 43.2%와 8.0% 이었다. 적은 양의 망간을 도프한 산화칼슘 촉매들은 망간의 양이 증가함에 따라 $C_2$ 선택성이 향상되는 경향을 보였으나 많은 양의 망간([Mn]>6.3 mol%)을 도프한 촉매에서는 $C_2$ 선택성이 감소하는 경향을 보였다. 금속이온이 도프되지 않은 6 wt.% Mn/CaO와 6 wt.% K/CaO 촉매는 700$^{\circ}C$에서 각각 13.2%와 30.9%의 $C_2$ 선택성을 보여 담지효과는 Mn보다도 K가 훨씬 우수함을 보였다. CaO와 Mn-doped CaO 촉매의 전기전도도를 $10^{-3}∼10^{-1}\;atm$의 산소분압 영역에서 측정한 결과 모두 p형의 전기적 특성을 보였으며 도프한 망간의 농도가 증가함에 다라 전기전도도는 감소하는 경향을 보였다. 촉매표면에 생성된 틈새형 산소이온이 메탄을 활성화할 수 있음을 제안하였고 틈새형 사소이온의 생성을 고체화학적 관점에서 논의하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.140-140
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• 2009

The Metal-ferroelectric-semiconductor (MFS) structure has superior advantages such as high density integration and non-destructive read-out operation. However, to obtain the desired electrical characteristics of an MFS structure is difficult because of interfacial reactions between ferroelectric thin film and Si substrate. As an alternative solution, the MFS structure with buffer insulating layer, i.e. metal-ferroelectric-insulator-semiconductor (MFIS), has been proposed to improve the interfacial properties. Insulators investigated as a buffer insulator in a MFIS structure, include $Ta_2O_5$, $HfO_2$, and $ZrO_2$ which are mainly high-k dielectrics. In this study, we prepared the Dy-doped $La_2O_3$ solution buffer layer as an insulator. To form a Dy-doped $La_2O_3$ buffer layer, the solution was spin-coated on p-type Si(100) wafer. The coated Dy-doped $La_2O_3$ films were annealed at various temperatures by rapid thermal annealing (RTA). To evaluate electrical properties, Au electrodes were thermally evaporated onto the surface of the samples. Finally, we observed the surface morphology and crystallization quality of the Dy-doped $La_2O_3$ on Si using atomic force microscopy (AFM) and x-ray diffractometer (XRD), respectively. To evaluate electrical properties, the capacitance-voltage (C-V) and current density-voltage (J-V) characteristics of Au/Dy-doped La2O3/Si structure were measured.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.73-77
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• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.387-388
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• 2008

In this paper, we have designed and fabricated hyperabrupt varactor diodes. Capacitance variations of hyperabrupt-doped varactor diodes are larger than those of uniform-doped varactor diodes. The measured reverse breakdown voltage of the fabricated varactor diodes was about 20 V. For the anode contact diameter of $50\;{\mu}m$, the maximum capacitance of the fabricated varactor diode was 2.1 pF and the minimum capacitance 0.44 pF. Therefore, the $C_{max}/C_{min}$ ratio was 4.77. Also, for the anode contact diameter of $60\;{\mu}m$, the maximum and minimum capacitances were 2.9 and 0.62 pF, respectively. And, thus, the $C_{max}/C_{min}$ ratio was 4.64.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• 대한전자공학회논문지
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• 제27권7호
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• pp.1042-1048
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• 1990

The approximations of charge relationships at normally doped semiconductor interfaces were qualitatively derived basis on electrical neutrality conditions. Effects of ion adsorptions, activation processes, interfacial structures, rectifying phenomena, and effects of surface potential barriers at the p- and n-Si/CsNO3 aqueous electrolytes, and the p-Si/(1HF:3HNO3:6H2O) electrolyte solutions were investigated using a cyclic voltammetric method. The space charge acts the most important role for the pn junction structures, the rectifying phenomena, and the activation processes. The Current-Voltage (I-V) characteristics curves significantly depend on developing of the Helmholtz double layers and charging of the show surface states during the activation processes. A linear Current-Voltage characteristics region was observed at the p-Si/(1HF:3HNO3: 6H2O) electrolyte solution interface.