• 한국재료학회:학술대회논문집
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• 한국재료학회 2005년도 춘계학술발표대회 및 제8회 신소재 심포지엄 논문개요집
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• pp.242-242
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• 2005

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.117-117
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• 1994

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2005년도 춘계총회 및 학술발표회
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• pp.21-21
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• 2005

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.12-15
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• 2008

Hafnium oxynitride films have been deposited onto a silicon substrate by means of radio frequency (RF) reactive sputtering using a hafnium dioxide $(HfO_2)$ target with a variety of nitrogen! argon $(N_2/Ar)$ gas flow ratios. Auger electron spectroscopy (AES)results confirm that $N_2$ was successfully incorporated into the HfON films. An increase in the $N_2/Ar$ gas flow ratio resulted in metal oxynitride formation. The films prepared with a $N_2/Ar$ flow ratio of 20/20 sccm show (222), (530), and (611) directions of $HfO_2N_2$, and the (-111), (311) directions of $HfO_2$. From X-ray reflectometry measurements, it can be concluded that with $N_2$ incorporated into the HfON films, the film density increases. The density increases from 9.8 to $10.1g/cm^3$. XRR also reveals that the surface roughness is related to the $N_2/Ar$ flow ratio.

• 한국표면공학회지
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• 제50권4호
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• pp.237-243
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• 2017

We demonstrated the thin film deposition of sodium phosphorous oxynitride (NaPON) via RF magnetron sputtering of $Na_3PO_4$, as a solid-state Na-ion conductor similar to lithium phosphorous oxynitride (LiPON), which is a commonly used solid electrolyte. The deposited NaPON thin film was characterized by scanning electron microscopy, X-ray diffractometry, and electrochemical impedance spectroscopy, to investigate the feasibility of the solid-state electrolyte in several different cell configurations. The key properties of a solidstate electrolyte, i.e., ionic conductivity and activation energy, were estimated from the complex non-linear least square fitting of the measured impedance spectra at various temperatures in the range of $27-90^{\circ}C$. The ionic conductivity of the NaPON film was measured to be $8.73{\times}10^{-6}S\;cm^{-1}$ at $27^{\circ}C$, which was comparable to that of the LiPON film. The activation energy was estimated to be 0.164 eV, which was lower than that of the LiPON film (0.672 eV). The obtained values encourage the use of a NaPON thin film in the future as a reasonable solid-state electrolyte.

• Metals and materials international
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• 제24권6호
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• pp.1285-1292
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• 2018

Microstructural properties of as-grown and annealed CoCrFeMnNi high entropy alloy (HEA) oxynitride thin films were investigated. The CoCrFeMnNi HEA oxynitride thin film was grown by magnetron sputtering method using an air gas, and annealed under the argon plus air flow for 5 h at $800^{\circ}C$. The as-grown film was homogeneous and uniform composed of nanometer-sized crystalline regions mixed with amorphous-like phase. The crystalline phase in the as-grown film was face centered cubic structure with the lattice constant of 0.4242 nm. Significant microstructural changes were observed after the annealing process. First, it was fully recrystallized and grain growth happened. Second, Ni-rich region was observed in nanometer-scale range. Third, phase change happened and it was determined to be $Fe_3O_4$ spinel structure with the lattice constant of 0.8326 nm. Hardness and Young's modulus of the as-grown film were 4.1 and 150.5 GPa, while those were 9.4 and 156.4 GPa for the annealed film, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.39-43
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• 1993

Electricial characteristics of gate dielectrics prepared by reoxidation of thermal $SiO_2$ in nitrous oxide gas have been investigated. 10 and 19nm-thick oxides were reoxidized at temperatures of $900-1000^{\circ}C$ for 10-60 min in $N_2O$ ambient. As reoxidation proceeds, it is shown that nitrogen concentration at $Si/SiO_2$ interface increases gradually through the AES analysis. Nitrogen pile-up at $Si/SiO_2$ interface acts as a oxidant diffusion barrier that reduces the oxidation rate significantly. And it not only strengthen oxynitride structure at the interface but improve the gate dielectric qualities. Reliabilities of oxynitride films are conformed by the breakdown distributions and constant current stress technique. Therefore, the oxynitride films made by this process show a good promise for future ULSI applications.

• 한국세라믹학회지
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• 제38권8호
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• pp.687-692
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• 2001

Silicon nitride-La-silicon oxynitride ceramics were fabricated by Spark Plasma Sintering (SPS). The density, crystalline phase and microstructure were compared with those obtained by Hot Pressing (HP). The full density was achieved within 40 min by spark plasma sintering at 1$650^{\circ}C$, whereas the same result was required by hot pressing with a dwell time of 500 min at higher temperature. There were some differences in the microstructure and second phases in the sintered ceramics, which are attributed to the rapid densification in the spark plasma sintering. The fine and acicular grain microstructure appeared in spark plasma sintering.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.97-102
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• 1993

According as the high integrity of the semi conductor devices is definited required, the concern on the multi-layered wiring, and three-dimensional devices is growing these days. Therefore, plasma-enhanced chemical vapored deposition(PECVD) enables low-teperature process and is widely used, but it causes the instability of the devices due to a lot of impurities within the film. The PECVD oxynitride was formed by changing the gas ratio of (N$_2$O) to (N$_2$+NH$_3$). It's contained a small portion of hydrogen, had higher refrctive index and capacitance than oxide, and showed the capacitance increasement and the chemical stabi1ity. This is caused by nitrogen distribution increase of the interface lather than within the film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1327-1329
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• 1998

It is very important to select superior inter-layer PMD(Pre Metal Dielectric) materials which can act as penetration barrier to various impurities created by CMP processes. In this paper, hot carrier degradation and device characteristics were studied with material variation of PMD-1 layers, which were split by LP-TEOS, SR-Oxide, PE-Oxynitride, PE-Nitride, PE-TEOS films. It was observed that the oxynitride and nitride using plasma was greatly decreased in hot carrier effect in comparison with silicon oxide. Consequently, silicon oxide turned out to be a better PMD-1 material than PE-oxynitride and PE-nitride. Also, LP-TEOS film was the best PMD-1 material Among the silicon oxides.