• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.96-100
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• 2023

We have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various O₂ flow rate. Experiments were carried out while varying the oxygen gas flow rate from 0sccm to 1.0sccm to see how the oxygen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 2125x10^-3 Ωcm when the IGZO film was deposited at RT and set up at 0.1sccm. As the oxygen vacancy rate decreased, the resistivity intended to increase. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.

• 한국세라믹학회지
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• 제46권2호
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• pp.155-160
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• 2009

The reliability could be one of the essential properties for multilayer ceramic capacitor (MLCC) using in various electronic devices and the concentration and mobility of oxygen vacancy would play important role in the reliability. To investigate the migration behavior of oxygen vacancies, thermally stimulated depolarization current (TSDC) is adopted. In dielectric material of X5R MLCC, the TSD-Current peak observed around 150$^{\circ}C$ and 200$^{\circ}C$ which represented the migration of oxygen vacancy. Substituting Yttrium for Dysprosium in X5R MLCC showed higher migration activation energy and lower TSD current density.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.9-14
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• 2017

$ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

• 한국세라믹학회지
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• 제46권6호
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• pp.695-699
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• 2009

We studied the transfer of oxygen vacancy and proton in Y-doped BaZr$O_3$ (BYZ) using density functional theory (DFT). An oxygen vacancy was generated in the $2{\times}2{\times}2$ BYZ superstructure by replacing two Zr atoms with two Y atoms to satisfy the charge neutrality condition. The O vacancy transfer between the first and second nearest O atom sites from a Y atom showed the lowest activation energy barrier of 0.42 eV, compared to the other transfers between first and first, and second and second in the superstructure. Two protons were inserted in the structure by adding a proton and hydroxyl that were supplied by the dissociation of a water molecule. The two protons bonded to the first and second nearest O atoms were energetically the most favorable. The activation energy barrier for a proton transfer in the structure was 0.51 eV, when either proton transferred to its neighbor O atom. This value was well matched with the experimentally determined one.

• Bulletin of the Korean Chemical Society
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• 제15권8호
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• pp.616-622
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• 1994

The oxidation of carbon monoxide by gaseous oxygen in the presence of a powdered $Nd_{1-x}Sr_xCoO_{3-y}$ solid solution as a catalyst has been investigated in the temperature range from 150$^{\circ}$C to 300$^{\circ}$C under various CO and $O_2$ partial pressures. The site of Sr substitution, nonstoichiometry, structure, and microstructure were studied by means of powder X-ray diffraction and infrared spectroscopy. The electrical conductivity of the solid solution has been measured at 300$^{\circ}$C under various CO and $O_2$ partial pressures. The oxidation rates have been correlated with 1.5-and 1.2-order kinetics with and without a $CO_2$ trap, respectively; first-and 0.7 order with respect to CO and 0.5-order to $O_2$. For the above reaction temperature range, the activation energy is in the range from 0.25 to 0.35 eV/mol. From the infrared spectroscopic, conductivity and kinetic data, CO appears essentially to be adsorbed on the lattice oxygens of the catalyst, while $O_2$ adsorbs as ions on the oxygen vacancies formed by Sr substitution. The oxygen vacancy mechanism of the CO oxidation and the main defect of $Nd_{1-x}Sr_xCoO_{3-y}$ solid solution are supported and suggested from the agreement between IR data, conductivities, and kinetic data.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.214.2-214.2
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• 2015

본 연구에서는 Zr을 첨가한 용액 공정 기반 ZTO:Zr 산화물 반도체 제작 및 열처리 온도에 따른 트랜지스터의 특성 변화를 분석하였다. Zn:Sn=4:7 비율로 고정하고, Zr (0~1%) 비율에 따른 도핑과 열처리 온도($350{\sim}550^{\circ}C$)를 가변하였다. 실험 결과, Zr의 비율이 증가할수록 전류와 이동도가 감소하였고, 문턱전압이 양의 방향으로 이동하는 것을 확인하였다. Zr는 SEP (Standard Electrode Potential)가 -1.45로 Zn (-0.76), Sn (-0.13) 보다 작아 금속과 산소의 결합을 증가시키며, 또한 밴드갭이 ~7 eV로 다른 금속 보다 높아 산소와 결합력이 높다. 이러한 요인은 산화물 내의 산소 원자 결함(Oxygen vacancy)을 감소시킨다. 반대로 열처리 온도가 높아질수록 탈 수산화(Dehydroxylation)로 인한 산소 원자 결함이 증가시켜, Zr 도핑 효과와 반대 경향을 보인다. 실험 결과를 통해 Zr:Zn:Sn=0.5:4:7의 비율과 $550^{\circ}C$ 열처리 조건에서 문턱전압과 이동도, 아문턱 스윙, 전류 온오프 비(Ion/Ioff)가 각각 0.68V, $0.18cm^2/Vs$, 1.06 V/dec, $1.6{\times}10.6$의 특성을 확인하였다.

• Applied Science and Convergence Technology
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• 제25권6호
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• pp.145-148
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• 2016

This paper, Al-doped ZnO(AZO) thin films for application as transparent conducting oxide films were deposited on the Corning glass substrate by using RF magnetron sputtering system. The effects of various Argon gas flow rates on optical and electrical characteristics of AZO films were investigate sputtering method. The Carrier Concentration is enhanced as Ar gas rate increases, and also the oxygen vacancy concentration. The figure of merit obtained in this study means that AZO films which deposited Ar gas rate of 75 sccm have the highest Carrier concentration and Hall mobility, which have the highest photoelectrical performance that it could be used as transparent electrodes.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.29.1-29.1
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• 2008

• 한국결정성장학회지
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• 제1권1호
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• pp.5-16
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• 1991

희토류 금속 산화물(RE=Ce, Pr, Nd, Eu, Er)을 1wt% 첨가한 큐빅 $ZrO_2(10 mol% Y_2O_3)$단결정을 스컬법으로 육성하였다. 육성된 단결정의 (111) 면에서의 임피던스 분석에 의한 전기적 성질을 조사하였다. 낮은 온도($500^{\circ}C$)에서 온도와 전기전도도와의 관계를 plot하였으며 $약300-400^{\circ}C$ 사이에서 전이를 관찰하였다. 저온 (전이전)과 고온(전이후 $50^{\circ}C$까지)산소 vacancy 이동에 관한 활성화 에너지를 구하였으며 전이로 인한 활성화 에너지의 차이는 안정제로 첨가한 이트륨 이온과 희토류 dopant 그리고 산소 vacancy와의 defect complexes를 붕괴하고 이온전도에 참여하게되는 산소 vacancy 형성에 관한 활성화 에너지로 볼 수 있다. yttria가 첨가됨에 따라, 또 희토류 산화물들의 첨가에 따른 활성화 에너지를 구하였으면 이온전도기구를 논의하였다. 육성된 단결정들은 첨가된 dopantdp 기인하여 Ce은 orang-red, Pr은 golden-yellow, Nd는 lilac, Eu는 옅은 pink, Er은 pink색으로 발현하였으며 가시광선 영역에서 광흡수 결과로서 나타내었다.

• 센서학회지
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• 제22권4호
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• pp.244-248
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• 2013

The discovery of a two-dimensional electron gas (2DEG) in $LaAlO_3$ (LAO)/$SrTiO_3$ (STO) heterostructure has stimulated intense research activity. We suggest a new structure model based on $KNbO_3$ (KNO) material. The KNO thin films were grown on $TiO_2$-terminated STO substrates as a p-type structure ($NbO_2/KO/TiO_2$) to form a two-dimensional hole gas (2DHG). The STO thin films were grown on KNO/$TiO_2$-terminated STO substrates as an n-type structure to form a 2DEG. Oxygen pressure during the deposition of the KNO and STO thin films was changed so as to determine the effect of oxygen vacancies on 2DEGs. Our results showed conducting behavior in the n-type structure and insulating properties in the p-type structure. When both the KNO and STO thin films were deposited on a $TiO_2$-terminated STO substrate at a low oxygen pressure, the conductivity was found to be higher than that at higher oxygen pressures. Furthermore, the heterostructure formed at various oxygen pressures resulted in structures with different current values. An STO/KNO heterostructure was also grown on the STO substrate, without using the buffered oxide etchant (BOE) treatment, so as to confirm the effects of the polar catastrophe mechanism. An STO/KNO heterostructure grown on an STO substrate without BOE treatment did not exhibit conductivity. Therefore, we expect that the mechanics of 2DEGs in the STO/KNO heterostructures are governed by the oxygen vacancy mechanism and the polar catastrophe mechanism.