• Electrical & Electronic Materials
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• v.8 no.4
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• pp.400-405
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• 1995

ZnO films have been grown easily with the conventional thermal evaporation method on SiO$\_$2/ coated Si wafers. Anhydrous zinc acetate has been used as evaporation source. Zinc-acetate was directly heated in the laboratory-made brass boat. Zinc-acetate was sublimed at the boat temperature of about 220.deg. C. The substrates were heated to 600.deg. C with home made tantalium heater. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. X-ray diffraction patterns showed all the films to be amorphous. The films deposited at high oxygen pressure exhibit higher resistivity than films at low pressure. Energy dispersive spectroscopy(EDS) and rutherford backscattering spectrometry(RBS) were conducted on the films to reveal the composition of the ZnO films.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.561-568
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• 1997

The effects of sintering temperature and oxygen partial pressure on the electromagnetic properties of Mn-Zn ferrites were investigated. The grain increased with increasing temperature. The power loss at 100 kHz was decreased, while the power loss at 500 kHz was increased as the grain size increased with sintering temperature. Sintering with low oxygen partial pressure at 115$0^{\circ}C$ resulted in high density and initial permeability, and decreased the power loss at 100 kHz and 500 kHz. The oxygen partial pressure lower than 10-2 atm. during heating, significantly suppressed the hysteresis loss. However, the oxygen activity did not affect the grain size of sintered cores.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.37 no.10
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• pp.879-886
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• 2013

This study aims to provide helpful suggestions for understanding the effect of high EGR on DME HCCI combustion. This study determined which between oxygen partial pressure and oxygen concentration was the main factor affecting the LTHR heating ratio. Furthermore, EGR and the supercharging effect were investigated. To define the parameters for the EGR ratio and supercharging pressure, a numerical analysis of the chemical reaction was conducted under the following conditions: (1) variation of EGR ratio, oxygen concentration, and oxygen content; (2) variation of oxygen partial pressure while the oxygen concentration was almost constant; and (3) variation of oxygen concentration while oxygen partial pressure was constant with EGR and supercharging. The results show that an increase in EGR reduces the combustion duration. On the other hand, an increase in boost pressure increases the combustion duration. Finally, the EGR and boost pressure affect the amount of increase in LTHR.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• Journal of Mechanical Science and Technology
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• v.15 no.4
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• pp.510-521
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• 2001

A nonlinear acoustic instability of subcritical liquid-oxygen droplet flames burning in gaseous hydrogen environment are investigated numerically. Emphases are focused on the effects of finite-rate kinetics by employing a detailed hydrogen-oxygen chemistry and of the phase change of liquid oxygen. Results show that if nonlinear harmonic pressure oscillations are imposed, larger flame responses occur during the period that the pressure passes its temporal minimum, at which point flames are closer to extinction condition. Consequently, the flame response function, normalized during one cycle of pressure oscillation, increases nonlinearly with the amplitude of pressure perturbation. This nonlinear response behavior can be explained as a possible mechanism to produce the threshold phenomena for acoustic instability, often observed during rocket-engine tests.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.427-430
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• 2008

BaTiO3 and SrTiO3 thin films were fabricated on Pt/Ti/SiO2/Si substrate by the pulsed laser deposition process. The dependence of the deposited film quality upon the partial oxygen pressure during the deposition process was importantly examined. Regardless of the oxygen pressure, the as-deposited films were not fully crystallized. However, the film deposited at low oxygen pressure became well crystallized after the annealing process. It was concluded, therefore, that the partial oxygen pressure is reduced as low as possible during the deposition process and then anneal the as-deposited samples at ambient pressure to fabricate the well crystallized SrTiO3 and BaTiO3 films by laser ablation.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.82-86
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• 2021

In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O₂/(Ar+O₂)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (V_th) of 4V.

• Journal of the Speleological Society of Korea
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• no.78
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• pp.29-31
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• 2007

This paper is devoted to a study of the characterization of the plasma state. For the purpose of monitoring plasma condition, we experiment on reactive ion etching (RIE) process. Without actual etch process, generated oxygen plasma, measurement of plasma emission intensity. Changing plasma process parameters, oxygen flow, RF power and chamber pressure have controlled. Using the optical emission spectroscopy (OES), we conform to the unique oxygen wavelength (777nm), the most powerful intensity region of the designated range. Increase of RF power and chamber pressure, emission intensity is increased. oxygen flow is not affect to emission intensity.

• Resources Recycling
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• v.16 no.3 s.77
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• pp.44-49
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• 2007

In the present work, the high temperature oxygen pressure leaching behavior of chalcopyrite was studied in sulfuric acid solution. The influence of leaching time, temperature and oxygen partial pressure on leaching process were examined. Leaching rate of copper increased significantly with increasing leaching temperature. Copper recovery reached 87.1% within 2 hours at $200^{\circ}C$ and 10 atm oxygen pressure, while most of the solubilized iron readily re-precipitates as hematite($Fe_2O_3$). It was confirmed that e main leach reaction of chalcopyrite occurred through oxidation with oxygen under oxygen pressure and high temperature(above $150^{\circ}C$). Because sulfur was oxidized entirely to sulfate, passivating elemental sulfur layer was not formed.

• Fashion & Textile Research Journal
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• v.7 no.3
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• pp.321-326
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• 2005

The purpose of this study was to investigate the effect of body fat on energy metabolic response and subjective sensations under the hot environment. Fifteen female university students volunteered as subjects. We organized subjects into three groups: low body fat group(group L : less than 20% of body fat), medium body fat group(group M : 20%~30% of body fat) and high body fat group(group H: more than 30% of body fat). The experiment was conducted with $32^{\circ}C$, 60%RH. The subjects repeated 'Exercise' and 'Rest' period. The results of this study are as follows ; The oxygen uptake value of AM is higher than PM. The value of group H is the highest in three fat groups. But it showed group L is the highest in oxygen uptake per weight. %body fat is the lower, oxygen uptake is the higher. In Calorie, group L has higher value in AM in than in PM. In M group and group H, a value of PM is higher than AM. In group H, difference of AM and PM is the highest. From a view point of three groups, a value of group H is the highest. This support that calorie increases as oxygen uptake increase. The heart rate values of group L and group H are the higher in AM than in PM. This support that heart rate was relation to oxygen uptake. In all three groups, the value of blood pressure is higher in AM than in PM. Subjective sensations of temperature sensation, thermal comfort, and wetness sensation are higher in Am than in Pm. This explains that subject sensations are similar to experimental data, such as oxygen uptake, heart rate, blood pressure. In oxygen uptake, heart rate and blood pressure, general tend to showed higher AM than PM. This showed that heart rate, oxygen uptake increase in AM, as blood pressure increase, too. From a view point of %body fat, group H is higher than the others in oxygen uptake, heart rate and blood pressure.