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Dependency of Oxygen Partial Pressure of ITO Films for Electrode of Oxide-based Thin-Film Transistor  

Kim, Kyung Hwan (Dept. of Electrical Engineering, Gachon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.20, no.2, 2021 , pp. 82-86 More about this Journal
Abstract
In this study, we investigated the oxygen partial pressure effect of ITO films for electrodes of oxide-based Thin-Film Transistor (TFT). Firstly, we deposited single ITO films on the glass substrate at room temperature. ITO films were prepared at the various partial pressures of oxygen gas 0-7.4% (O2/(Ar+O2)). As increasing oxygen on the process of film deposition, electrical properties were improved and optical transmittance increased in the visible light range (300-800 nm). For the electrode of TFT, we fabricated a TFT device (W/L=1000/200 ㎛) with ITO films as the source and drain electrode on the silicon wafer. Except for the TFT device combined with ITO film prepared at the oxygen partial pressure ratio of 7.4%, We confirmed that TFT devices with ITO films via FTS system operated as a driving device at threshold voltage (Vth) of 4V.
Keywords
TFT; ITO; Oxygen; Sputtering;
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