• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• 한국재료학회지
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• 제12권12호
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• 공업화학
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• 제18권5호
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• pp.522-526
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• 2007

산화처리 탄소로부터 상분해시킨 코크스의 구조 및 전기화학적 특성을 조사하였고, KOH 활성화 코크스와 비교하였다. $NaCLO_3$/니들 코크스의 비율이 7.5 이상의 조건에서 산화처리를 행한 graphene 층간 구조를 가진 니들 코크스($d_{002}=3.5{\AA} $)는 산화흑연 구조로 상변화가 일어나고, 이 때 산소함량의 증가와 함께 층간 간격은 $6.9{\AA} $으로 증가하였다. 산화처리 탄소를 $200^{\circ}C$에서 열처리 건조를 하면 상분해가 일어나서 다시 graphene 층간 구조로 복원하고, 층간 간격은 $3.6{\AA} $으로 감소하였다. 그러나, KOH 활성화 과정에서 니들 코크스의 층간 변화는 관찰되지 않았다. 한편, 1차 충전에서 전해질 이온들에 의한 상분해 코크스에의 침입은 1.0 V에서 일어나고, 이는 KOH 활성 코크스보다 작은 수치이다. 상분해 코크스를 이용한 커패시터 셀은 1 kHz에서 $0.57{\Omega}$의 내부저항을 나타내고, 2 전극 시스템에서 0~2.5 V 범위 내에서 측정한 상분해 코크그의 중량 또는 전극 부피 당 용량은 각각 30.3 F/g과 26.9 F/mL을 나타내었고, 이들 특성은 KOH 활성 코크스보다 우수하였다. 상분해 코크스의 우수한 전기화학적 특성은 산화처리-상분해 과정에서의 층간 팽창-수축에 따른 층간 결함과 관련 있는 것으로 판단된다.

• 한국식품과학회지
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• 제27권1호
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• pp.19-24
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• 1995

대두에 함유된 lipoxygenase 효소가 수용액중에서 ascorbic acid 등 각종 저해제의 영향으로 효소 작용이 저해받아서 이 효소에 의해 발생할 수 있는 이취미(off-flavor)를 감소시킬 목적으로 미리 침지시킨 대두를 이들 저해물질의 수용액중에서 균질화시킨 후 lipoxygenase 활성의 저해효과를 산소 전극법에 의해 분석하였다. 10 mM의 ascorbic acid를 첨가한 경우 L-1 효소는 대조구에 비해 41.7%의 저해효과를 나타내었으나 L-2/3 효소는 49.8%의 저해효과를 보였다. 균질화 시키기 위하여 교반시간을 15분까지 하였을 때에는 3분간 처리하였을 때 보다 L-2/3 효소의 경우 70.8%의 저해를 보여 교반에 의한 저해 상승 효과를 나타내었다. $25^{\circ}C$에 72시간 방치하였을 때 효소 활성의 안정성을 검토한 결과 L-2/3 효소의 경우 52.8%의 활성이 떨어졌으나 L-1 효소는 15.8%만 떨어졌으며, $4^{\circ}C$에서는 비교적 안정하였다. SH기봉쇄제, SS 환원제, 항산화제 및 금속 chelator 등 각종 저해제 중에서 L-ascorbic acid가 대두 이취미 생성의 주요인자라고 알려져 있는 L-2/3 효소 활성의 억제에 가장 효과적이라고 판단되었다.

• 한국세라믹학회지
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• 제43권12호
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• pp.812-822
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• 2006

This study amis to investigate the functional analysis of anode and cathode materials in Anode supported Solid Oxide Fuel Cell. The concentration polarization of single cell was investigated with CFD (Computational Fluid Dynamics) method for the case of the different morphology by using four types of unit cell and discussed to reduce the concentration polarization. The concentration polarization at anode side effected the voltage loss in Anode supported Solid Oxide Fuel Cell and increased contact areas between fuel gas and anode side could reduce the concentration polarization. For intermediate temperature operation, Anode-supported single cells with thin electrolyte layer of YSZ (Yttria-Stabilized Zirconia) were fabricated and short stacks were built and evaluated. We also developed diesel and methane autothermal reforming (ATR) reactors in order to provide fuels to SOFC stacks. Influences of the $H_2O/C$ (steam to carbon ratio), $O_2/C$ (oxygen to carbon ratio) and GHSV (Gas Hourly Space Velocity) on performances of stacks have been investigated. Performance of the stack operated with a diesel reformer was lower than with using hydrogen as a fuel due to lower Nernst voltage and carbon formation at anode side. The stack operated with a natural gas reformer showed similar performances as with using hydrogen. Effects of various reformer parameters such as $H_2O/C$ and $O_2/C$ were carefully investigated. It is found that $O_2/C$ is a sensitive parameter to control stack performance.

• 공업화학
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• 제32권3호
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• pp.332-339
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• 2021

최근 화석 연료 고갈과 지구 온난화를 가속화하는 온실 가스 배출에 대한 우려로 온실 가스를 배출하지 않는 청정 에너지원인 수소 에너지 기술의 중요성이 강조되고 있다. 그 중 물을 전기분해하여 수소를 얻는 수전해 기술은 그린 수소 기술로 궁극적인 청정 미래 에너지 자원으로 주목받고 있다. 본 연구에서는 양이온 교환막 수전해(proton exchange membrane water electrolysis, PEMWE)의 셀 구성요소 중 하나인 확산층(porous transport layer, PTL)을 sandpaper를 이용한 표면 처리를 통하여 표면 특성을 제어하였으며, 이러한 표면 특성 개선을 통하여 과전압을 줄이고 성능과 안정성을 높이기 위한 연구를 진행하였다. Sandpaper 400, 180, 100방을 준비하여 PTL 표면을 sanding하여 처리하였으며, 처리 후 1000방의 고른 sandpaper로 표면을 매끄럽게 처리하였다. 준비된 확산층은 물접촉각을 측정하여 친수성 정도를 분석하였으며, SEM 분석을 통하여 표면 형태를 관찰하였다. 전기화학적 특성 분석을 위하여 I-V 성능곡선, 임피던스 측정을 진행하여 성능 개선 여부를 확인하였다.

• 한국수소및신에너지학회논문집
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• 제32권6호
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• pp.442-454
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• 2021

The porous transport layer (PTL) is essential to effectively remove oxygen and hydrogen gas from the electrode surface at high current density operation conditions. In this study, the effect of PTL with different characteristics such as pore size, pore gradient, interfacial coating was investigated by multi-layered sintered mesh. A water electrolysis single cell of active area of the 34.56 cm² was constructed, and IV performance and impedance analysis were conducted in the range of 0 to 2.0 A/cm². It was confirmed that the multi-layered sintered mesh PTL, which have an average pore size of 25 to 57 ㎛ and a larger pore gradient, removed bubbles effectively and thus seemed to improve IV performance. Also, it was confirmed that the catalytic metals such as Ni, NiMo coating on the PTL reduced activation overpotential, but increased mass transport overpotential.

• 한국물환경학회지
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• 제38권2호
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• pp.103-112
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• 2022

A gold amalgam voltammetric microelectrode (GAVM) system was developed for the quantification of dissolved biogeochemical species, such as O₂, Fe²⁺, Mn²⁺, and HS^- in sediment porewater. Commercially available Ag/AgCl and platinum electrodes were used as the reference and counter electrode, respectively, and a gold amalgam microelectrode was fabricated in the laboratory using 150-um diameter gold wire and a borosilicate capillary tube with a 1.6-mm diameter. A portable potentiostat (Metrohm, DropSens) was used for the application of voltage sweeping and to acquire the electric current. For sediment profiling, a commercially available actuator was customized and modified. The analysis method used in the system used the most widely used analysis method among the electrochemical analysis currently used The GAVM system was successively calibrated with the species and applied to estuarine sediments. The porewater analysis showed that the oxygen concentration was decreased to zero at a depth of 0.6 mm, and maximum Mn²⁺ and Fe²⁺ concentrations of 50 uM and 20 uM were detected at 2 and 3-cm depths, respectively. Maximum HS^- concentrations of 10 uM were detected at 4 cm in the deeper sediments. The GAVM system was successfully developed and applied to the sediment and can be used to better understand biogeochemical reactions.

• Korean Chemical Engineering Research
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• 제61권3호
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• pp.362-367
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• 2023

최근 고분자 전해질 연료전지(PEMFC)에서 고분자 막의 연구개발은 가격 저감과 성능 향상을 위해 박막화하는 방향으로 진행되고 있다. 그리고 상용차용 수소 전기 차량 수요가 증가하고 있는데, 승용차용보다 내구성이 5배 증가해야 한다. 막의 두께가 얇아짐에도 불구하고 내구성은 5배 증가해야 하므로, 막의 내구성 향상이 더 중요해진 상황이다. 가속 내구 평가 시간도 단축해야하기 때문에 기존 프로토콜에서 공기 대신 산소를 사용한 프로토콜을 10 ㎛ 박막에 적용해 내구성을 평가하였다. 가속 내구 평가(개회로 전압 유지)는 720시간에 종료하였다. 공기를 사용한 미국 에너지부(DOE) 프로토콜을 사용했다면 약 1,500시간의 내구성으로 운전시간 450,000 km 수명을 예상한다. 화학적 내구 평가중에 전극의 활성 면적이 51% 감소해 촉매 열화가 막 내구성 약화에 영향을 준 것으로 판단되고, 촉매 열화 속도를 감소시키면 막 내구성이 증가할 것으로 예상된다.