• IEIE Transactions on Smart Processing and Computing
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• 제5권2호
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• pp.107-116
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• 2016

Premature babies of less than 37 weeks gestation might require oxygen therapy as an integral part of treatment and respiratory support. Because of their under-developed lungs, these so-called "preemies" might contract respiratory distress syndrome (RDS). To treat RDS, neonatal oxygen therapy is administered, where controlled oxygen gas is measured as a fraction of inspired oxygen ($FiO_2$). However, exposure to high oxygen content during long treatment could cause oxygen intoxication, which might cause permanent blindness due to retinopathy of prematurity (ROP), whereas insufficient oxygen exposure could cause severe hypoxia. A doctor would use oxygen saturation ($SpO_2$) data and prescribe a dose of $FiO_2$ to maintain $SpO_2$ within a suitable range. One objective is to maintain $SpO_2$ within the acceptable range using $FiO_2$ that is as low as possible. Adjustment of $FiO_2$ would normally be done by nurses every 15 to 30 minutes, which might not be safe in many situations. An error in $FiO_2$ adjustment during a manual procedure could be as large as +/- 2.5%. This paper presents a system that can determine an $FiO_2$ value suitable to the current $SpO_2$ and that automatically adjusts $FiO_2$ with an error clearance of +/- 0.25%.

• 한국세라믹학회지
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• 제56권3호
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• pp.302-307
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• 2019

The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H₂O₂ (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H₂O₂ as the oxygen precursor instead of a conventional oxygen source such as H₂O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H₂O₂ concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

• 산업기술연구
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• 제25권A호
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• pp.151-156
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• 2005

Auto exhausts and air pollution can become trapped in the cabin of vehicle, reducing the amount of oxygen available for breathing. Driver may feel sleepy, headaches, nausea, confusion, dizziness and lower levels of oxygen can damage the driver's general health. Consequently, oxygen generator purified oxygen into the car to help driver get the oxygen driver's body needs. In this study, in order to evaluate the oxygen generator performance, the samples that the various conditions(humidity(50%, 100%), flow and oxygen concentration) were examined. There were three types of oxygen generator; sample 1($2.5{\ell}/min$, $36%O_2$), sample 2($4.5{\ell}/min$, $41%O_2$) and sample 3($5{\ell}/min$, $39%O_2$). As the humidity increased from 50% to 100%, the oxygen concentration of the sample 1(36%), 2(41%) and 3(39%) was reduced $31%O_2$, $38%O_2$ and $38%O_2$, respectively. Also, the each sample measured that effect of human in car on oxygen concentration, if the oxygen concentration is one person in car, each sample of oxygen concentration was $20.8%O_2$, $23.7%O_2$ and $21.2%O_2$. From the above results, it was shown that oxygen generator for car, if the oxygen concentration is increased, effect of humidity is reduced, and that in the sample of supplying a high-rate of oxygen, the oxygen concentration is increased. It was suggested that effect of humidity on oxygen generator for car can be reduced according to the supply of oxygen.

• KEPCO Journal on Electric Power and Energy
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• 제2권2호
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• pp.285-291
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• 2016

In chemical-looping combustion, pure oxygen is transferred to fuel by solid particles called as oxygen carrier. Chemical-looping combustion process usually utilizes a circulating fluidized-bed process for fuel combustion and regeneration of the reduced oxygen carrier. The performance of an oxygen carrier varies with the active metal oxide and the raw support materials used. In this work, spraydried Mn-based oxygen carriers were prepared with different raw support materials and their physical properties and oxygen transfer performance were investigated to determine that the raw support materials used are suitable for spray-dried manganese oxide oxygen carrier. Oxygen carriers composed of 70 wt% $Mn_3O_4$ and 30 wt% support were produced using spray dryer. Two different types of $Al_2O_3$, ${\gamma}-Al_2O_3$ and ${\alpha}-Al_2O_3$, and $MgAl_2O_4$ were applied as starting raw support materials. The oxygen carrier prepared from ${\gamma}-Al_2O_3$ showed high mechanical strength stronger than commercial fluidization catalytic cracking catalyst at calcination temperatures below $1100^{\circ}C$, while the ones prepared from ${\alpha}-Al_2O_3$ and $MgAl_2O_4$ required higher calcination temperatures. Oxygen transfer capacity of the oxygen carrier prepared from ${\gamma}-Al_2O_3$ was less than 3 wt%. In comparison, oxygen carriers prepared from ${\alpha}-Al_2O_3$ and $MgAl_2O_4$ showed higher oxygen transfer capacity, around 3.4 and 4.4 wt%, respectively. Among the prepared Mn-based oxygen carriers, the one made from $MgAl_2O_4$ showed superior oxygen transfer performance in the chemical-looping combustion of $CH_4$, $H_2$, and CO. However, it required a high calcination temperature of $1400^{\circ}C$ to obtain strong mechnical strength. Therefore, further study to develop new support compositions is required to lower the calcination temperature without decline in the oxygen transfer performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.196-196
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• 2011

Molecular $N_2O$ has bee known to react over oxygen vacancy on a reduced rutile $TiO_2$(110)-1${\times}$1 surface to desorb as molecular $N_2$ leaving oxygen atom behind. In the present study, we investigated the reaction of $N_2O$ on rutile $TiO_2$(110) using temperature-programmed desorption (TPD). Our results indicate that $N_2O$ does not react over the oxygen vacancy under a typical UHV experimental condition. On a rutile $TiO_2$(110)-1${\times}$1 with a well-defined oxygen vacancy concentration of 5% ($2.6{\times}10^{13}/cm^2$), $N_2O$ desorption features show a monolayer peak maximum at 135 K followed by a small peak maximum at 170 K. When the oxygen vacancy is blocked with $H_2O$, the $N_2O$ peak at 170 K disappears completely, indicating that the peak is due to molecular $N_2O$ interacting with oxygen vacancy. The integrated amount of desorbed $N_2O$ plotted against the amount of adsorbed $N_2O$ however shows a straight line with no offset indicating no loss of $N_2O$ during our cycles of TPD measurements. In addition, our $N_2O$ uptake measurements at 70~100 K showed no $N_2$ (as a reaction product) desorption except contaminant $N_2$. Also, $H_2O$ TPD taken after $N_2O$ scattering up to 350 K indicates no change in the vacancy-related $H_2O$ desorption peak at 500 K showing no change in the oxygen vacancy concentration after the interaction with $N_2O$.

• 한국물환경학회지
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• 제26권1호
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• pp.156-159
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• 2010

Peroxide is used frequently to provide electron acceptors to aerobes for the purpose of in situ bioremediation of contaminated soil/sediment. In this study, oxygen release rate of peroxides and factors affecting on dissolution and diffusion of oxygen into pore water were evaluated. Peroxides studied in this study were magnesium peroxide ($MgO_2$), calcium peroxide ($CaO_2$), and sodium percarbonate ($Na_2CO_3{\cdot}1.5H_2O_2$). $Na_2CO_3{\cdot}1.5H_2O_2$ showed the highest oxygen release rate per unit mass and the shortest release duration time among three peroxides. A simple first-order decay model for predicting the release rate of oxygen from peroxide into pore water was presented and used to fit the experimental data. The first order oxygen release rate constants k for $MgO_2$, $CaO_2$ and $Na_2CO_3{\cdot}1.5H_2O_2$ were 0.45 /hr, 3.22 /hr and 134 /hr, respectively. If $MgO_2$ was mixed with clay, oxygen release rate was lowered significantly mainly due to limitation of contact area and diffusion, implying that oxygen can be provided to the indigenous aerobes for the extended period of time.

• 한국재료학회지
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• 제18권12호
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• pp.673-677
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• 2008

Calcia (CaO) stabilized cubic-$HfO_2$ is studied by density functional theory (DFT) with generalized gradient approximation (GGA). When a Ca atom is substituted for a Hf atom, an oxygen vacancy is produced to satisfy the charge neutrality. The lattice parameter of a $2{\times}2{\times}2$ cubic $HfO_2$ supercell then increases by $0.02\;{\AA}$. The oxygen atoms closest to the oxygen vacancy are attracted to the vacancy as the vacancy is positive compared to the oxygen ion. When the oxygen vacancy is located at the site closest to the Ca atom, the total energy of $HfO_2$ reaches its minimum. The energy barriers for the migration of the oxygen vacancy were calculated. The energy barriers between the first and the second nearest sites, the second and the third nearest sites, and the third and fourth nearest sites are 0.2, 0.5, and 0.24 eV, respectively. The oxygen vacancies at the third and fourth nearest sites relative to the Ca atom represent the oxygen vacancies in undoped $HfO_2$. Therefore, the energy barrier for oxygen migration in the $HfO_2$ gate dielectric is 0.24 eV, which can explain the origin of gate dielectric leakage.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.124-128
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• 2000

Electrical properties of $ZrO_2-TiO_2Yb_2O_3$mixed conductor (Ti-YbSZ) were investigated. This mixed conductor can be applied as a membrane for gas separation at high temperatures. The total conductivity decreased with increasing the $TiO_2$concentration. At high temperatures, the rate of the conductivity degradation became smaller than that at low temperatures. From the oxygen partial pressure dependence of the total conductivity of Ti-YbSZ, the electronic conductivity increased with increasing $TiO_2$concentration at low oxygen partial pressures and at high temperatures. Both 15 and 20 mol% $TiO_2$doped YbSZ showed high oxygen permeability. Mixed conductors, which has high $TiO_2$concentration in YbSZ, are promising materials for using as a membrane for gas separation at high temperatures.

• Transactions on Electrical and Electronic Materials
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• 제18권1호
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• pp.21-24
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• 2017

Usually, the oxygen vacancy is an important factor in an oxide semiconductor device because the conductivity is related to the oxygen vacancy, which is formed at the interface between oxide semiconductors and electrodes with an annealing processes. ZTO is made by mixing n-type ZnO and p-type $SnO_2$. Zink tin oxide (ZTO), zink oxide (ZnO) and tin oxide ($SnO_2$) thin films deposited by RF magnetron sputtering and annealed, to generate the oxygen vacancy, were analyzed by XPS spectra. The contents of oxygen vacancy were the highest in ZTO annealed at $150^{\circ}C$, ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The current was also increased with increasing the oxygen vacancy ions. The highest content of ZTO oxygen vacancies was obtained when annealed at 150. This is the middle level in compared with those of ZnO annealed at $200^{\circ}C$ and $SnO_2$ annealed at $100^{\circ}C$. The electrical properties of ZTO followed those of $SnO_2$, which acts a an enhancer in the oxide semiconductor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.435-438
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• 2001

Thin films of vanadium oxide(VO$\sub$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\sub$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition and bonding properties of films sputter-deposited under different oxygen gas pressures are characterized through XRO, XPS, RBS and FTIR measurements. All the films prepared below 8% O$_2$ are amorphous, and those prepared without oxygen are gray indicating the presence of V$_2$O$\sub$$_4$/ phase in the films. V$_2$O$\sub$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\sub$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms. located on the V-O plane of V$_2$O$\sub$5/ layer participate more readily in the oxidation process.