• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.334-334
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• 2012

Transparent oxide semiconductors have recently attracted much attention as channel layer materials due to advantageous electrical and optical characteristics such as high mobility, high stability, and good transparency. In addition, transparent oxide semiconductor can be fabricated at low temperature with a low production cost and it permits highly uniform devices such as large area displays. A variety of thin film transistors (TFTs) have been studied including ZnO, InZnO, and InGaZnO as the channel layer. Recently, there are many studies for substitution of Ga in InGaZnO TFTs due to their problem, such as stability of devices. In this work, new quaternary compound materials, tantalum-indium-tin oxide (TaInSnO) thin films were fabricated by using co-sputtering and used for the active channel layer in thin film transistors (TFTs). We deposited TaInSnO films in a mixed gas (O2+Ar) atmosphere by co-sputtering from Ta and ITO targets, respectively. The electric characteristics of TaInSnO TFTs and thin films were investigated according to the RF power applied to the $Ta_2O_5$ target. The addition of Ta elements could suppress the formation of oxygen vacancies because of the stronger oxidation tendency of Ta relative to that of In or Sn. Therefore the free carrier density decreased with increasing RF power of $Ta_2O_5$ in TaInSnO thin film. The optimized characteristics of TaInSnO TFT showed an on/off current ratio of $1.4{\times}108$, a threshold voltage of 2.91 V, a field-effect mobility of 2.37 cm2/Vs, and a subthreshold swing of 0.48 V/dec.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.27-32
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• 2006

The present status and prospects for further development of thin-film electroluminescent (TFEL) devices using oxide phosphors are described. High-luminance oxide TFEL devices have been recently developed using a new combinatorial deposition technique featuring rf magnetron sputtering with a subdivided powder target. In addition, new flexible oxide TFEL devices have been fabricated on an oxide ceramic sheet and operated stably in air above $200^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.79-82
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• 1998

Film characteristics of thin ONO dielectric layers for MONOS(metal-oxide-nitride-oxide-semiconductor) EEPRM was investigated by AES and AFM. Second derivative spectra of AES Si LVV overlapping peak provided useful information for chemical state analysis of superthin film. The ONO films with dimension of tunneling oxide 24${\AA}$, nitride 33${\AA}$, and blocking oxide 40${\AA}$ were fabricated. During deposition of the LPCVD nitride films on tunneling oxide, this thin oxide was nitrized. When the blocking oxide were deposited on the nitride film, the oxygen not only oxidized the nitride surface, but diffused through the nitride. The results of ONO film analysis exhibits that it is made up of SiO$_2$(blocking oxide)/O-rich SiON(interface/N-rich SiON(nitride)/-rich SiON(interface)/N-rich SiON(nitride)/O-rich SiON(tunneling oxide).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.263-267
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• 2006

Advances in non-sulfur-containing phosphors from low-temperature synthesis of thin-films suitable for glass substrates are discussed. The effects of preparation process on the properties of a variety of rare-earth-doped oxide hosts are reviewed. Cathodoluminescent characteristics have been studied to determine the usefulness of oxide thin-film phosphors in field emission displays.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.433-438
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• 2015

Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1702-1705
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• 2016

We propose a novel hydrogen-reduced p-type amorphous silicon oxide buffer layer between $TiO_2$ antireflection layer and p-type silicon window layer of silicon thin film solar cells. This new buffer layer can protect underlying the $TiO_2$ by suppressing hydrogen plasma, which could be made by excluding $H_2$ gas introduction during plasma deposition. Amorphous silicon oxide thin film solar cells with employing the new buffer layer exhibited better conversion efficiency (8.10 %) compared with the standard cell (7.88 %) without the buffer layer. This new buffer layer can be processed in the same p-chamber with in-situ mode before depositing main p-type amorphous silicon oxide window layer. Comparing with state-of-the-art buffer layer of AZO/p-nc-SiOx:H, our new buffer layer can be processed with cost-effective, much simple process based on similar device performances.

• Journal of the Korean Electrochemical Society
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• v.12 no.3
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• pp.251-257
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• 2009

In this study, we fabricated nickel oxide thin film for lithium based electrolyte using sol-gel method. This film was deposited by dip-coating method with mixed solvent of DameH (N,N-dimethylaminoethanol) and DI water. As changing the ratio between DmaeH and DI water, nickel oxide thin film was presented in different charge density and optical transmittance because they were shown various thickness. It was accounted for changing viscosity and density by the ratio of DmaeH and DI water. The thin film synthesized with 1 : 1 ratio of DmaeH and DI water was expressed best electrochromic performance in lithium based electrolyte, because of thick thickness but porous structures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04a
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• pp.35-38
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• 2004

Ozone is useful oxidizing gas for the fabrication of oxide thin films. Accordingly researching on oxidizing gas is required. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1334-1338
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• 2006

In this work, indium tin oxide (ITO) thin film was fabricated by indium-tin-organic sol including ITO nanoparticle. ITO nanoparticle showed ultrafine size about 5 nm and (222) preferred crystal structure. Also, ITO sol-gel thin film showed good optical transmittance over 83% and electrical resistance less than $7\;{\times}\;10^3\;{\Omega}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.259-264
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• 2000

Systematic research of metal alkoxide electrophoretic deposition has been developed. The formation mechanism of electrophoretic deposits has been offered. The structure study of dry and heat-treated electrophoretic deposits has been established. The concrete examples of one and bi-component oxide thin film formation were considered. The new approaches for thin film technology have developed on various substrates of different shapes and sizes. The correlation between thin film structure, mechanism of their formation, and physico-chemical properties has been determined.