• 제목/요약/키워드: oxide gas sensor

검색결과 288건 처리시간 0.033초

맴브레인 구조를 이용한 미세발열체형 유량센서의 제작과 그 특성 (Fabrication on Microheater Flow Sensors Using Membrane Structure and Its Characteristics)

  • 정귀상;노상수
    • 한국전기전자재료학회논문지
    • /
    • 제11권11호
    • /
    • pp.996-1000
    • /
    • 1998
  • This paper describes the characteristics of Pt microheater using aluminum oxide films as medium layer and its application to flow sensors. Pt microheater have heating temperature of $390^{\circ}C$ at heating power of 1.2 W. Output voltages of flow sensors which were fabricated by integrating sensing-part with heating-part increase as gas flow rate and its conductivity increase. At $O_2$ flow rate of 2000 sccm, heating power of 0.8 W, output voltage of flow sensor is 101 mV under bridge-applied voltage of 5 V.

  • PDF

High Oxygen Sensitivity of Nanocrystalline Ceria Prepared by a Thermochemical Process

  • Lee, Dong-Won;Yu, Ji-Hoon;Lim, Tae-Soo;Jang, Tae-Suk
    • 한국분말야금학회:학술대회논문집
    • /
    • 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
    • /
    • pp.416-417
    • /
    • 2006
  • Nanostructured ceria powder was synthesized by a thermochemical process and investigated its applicability for an oxygen gas sensor. An amorphous precursor powders prepared by spray drying a cerium-nitrate solution were transformed successfully into nanostructured ceria by heat-treatment in air atmosphere. The powders were a loose agglomerated structure with extremely fine $CeO_2$ particles about 15 nm in size, resulting in a very high specific surface area $(110\;m^2/g)$. The oxygen sensitivity and the response time $t_{90}$ measured at sintered sample at $1000^{\circ}C$ was about -0.25 and very short, i.e., $3{\sim}5$ seconds, respectively.

  • PDF

Removal of Anodic Aluminum Oxide Barrier Layer on Silicon Substrate by Using Cl2 BCl3 Neutral Beam Etching

  • 김찬규;연제관;민경석;오종식;염근영
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
    • /
    • pp.480-480
    • /
    • 2011
  • 양극산화(anodization)는 금속을 전기화학적으로 산화시켜 금속산화물로 만드는 기술로서 최근 다양한 크기의 나노 구조를 제조하는 기술로 각광받고 있으며, 이러한 기술에 의하여 얻어지는 anodic aluminum oxide(AAO)는 magnetic data storage, optoelectronic device, sensor에 적용될 수 있는 nano device 뿐만 아니라 nanostructure를 제조하기 위한 template 및 mask로써 최근 광범위 하게 연구되고 있다. 또한, AAO는 Al2O3의 단단한 구조를 가진 무기재료이므로 solid mask로써 다른 porous materials 보다 뛰어난 특성을 갖고 있다. 또한 electron-beam lithography 및 block co-polymer 에 의한 patterning 과 비교하여 매우 경제적이며, 재현성이 우수할 뿐만 아니라 대면적에서 나노 구조의 크기 및 형상제어가 비교적 쉽기 때문에 널리 사용되고 있다. 그러나, AAO 형성 시 생기게 되는 반구형 모양의 barrier layer는 물질(substance)과 기판과의 direct physical and electrical contact을 방해하기 때문에 해결해야 할 가장 큰 문제점 중 하나로 알려져 있다. 따라서 본 연구에서는 실리콘 기판위의 형성된 AAO의 barrier layer를 Cl/BCl3 gas mixture에서 Neutral Beam Etching (NBE)과 Ion Beam Etching (IBE) 로 각각 식각한 후 그 결과와 비교하였다. NBE와 IBE 모두 Cl2/BCl3 gas mixture에서 BCl3 gas의 첨가량이 60% 일 경우 etch rate이 가장 높게 나타났고, optical emission spectroscopy (OES)로 Cl2/BCl3 플라즈마 내의 Cl radical density와 X-ray photoelectron spectroscopy (XPS)로 AAO 표면 위를 관찰한 결과 휘발성 BOxCly의 형성이 AAO 식각에 크게 관여함을 확인 할 수 있었다. 또한, NBE와 IBE 실험한 다양한 Cl2/BCl3 gas mixture ratio 에서 AAO가 식각이 되지만, 이온빔의 경우 나노사이즈의 AAO pore의 charging에 의해 pore 아래쪽의 위치한 barrier layer를 어떤 식각조건에서도 제거하지 못하였다. 하지만, NBE에서는 BCl3-rich Cl2/BCl3 gas mixture인 식각조건에서 AAO pore에 휘발성 BOxCly를 형성하면서 barrier layer를 제거할 수 있었다.

  • PDF

Sensing Properties of Ga-doped ZnO Nanowire Gas Sensor

  • Lee, Sang Yeol
    • Transactions on Electrical and Electronic Materials
    • /
    • 제16권2호
    • /
    • pp.78-81
    • /
    • 2015
  • Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.

순 아르콘 캐리어 가스와 APCVD로 성장된 다결정 3C-SiC 박막의 기계적 특성 (Mechanical characteristics of polycrystalline 3C-SiC thin films using Ar carrier gas by APCVD)

  • 한기봉;정귀상
    • 센서학회지
    • /
    • 제16권4호
    • /
    • pp.319-323
    • /
    • 2007
  • This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC thin film was deposited by APCVD method using only Ar carrier gas and single precursor HMDS at $1100^{\circ}C$. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation. Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and the roughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of the grown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion, high frequency and MEMS applications.

스마트 호기 센서 응용 금속 산화물 반도체 나노입자 연구 동향

  • 유란;이우영
    • 세라미스트
    • /
    • 제21권2호
    • /
    • pp.38-48
    • /
    • 2018
  • This paper reports a comprehensive review of the state-of-the-art in research on the enhancement of sensing properties for the detection of gases in exhaled breath. Daily health monitoring and early diagnosis of specific diseases via the analysis of exhaled breath is possible. Because biomarkers in exhaled breath are emitted in a very small amount, it is necessary to develop highly sensitive gas sensors. In recent years, a number of researches have been carried out using various strategies for the enhancement of sensing properties such as doping, catalyst, hollow sphere, heterojunction, size effect. We introduced each strategy and summarized recent progress on sensing properties for detection of biomarkers in exhaled breath.

고감도 H2S 감지를 위한 SnO2 장식된 Cr2O3 nanorods 이종구조 (Heterostructures of SnO2-Decorated Cr2O3 Nanorods for Highly Sensitive H2S Detection)

  • 정재한;조윤행;황준호;이수형;이승기;박시형;손성우;조동휘;이광재;심영석
    • 센서학회지
    • /
    • 제33권1호
    • /
    • pp.40-47
    • /
    • 2024
  • The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO2) on p-type chromium oxide (Cr2O3) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO2 is incorporated. In comparison to Cr2O3 films, the bare Cr2O3 nanorods exhibits a response 3.3 times greater to 50 ppm H2S at 300℃, while the SnO2-decorated Cr2O3 nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH4, H2S, CO2, H2), a notable selectivity toward H2S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H2S, thus advancing the prospects of gas sensor technology.

H2S Gas Sensing Properties of SnO2:CuO Thin Film Sensors Prepared by E-beam Evaporation

  • Sohn, Jae-Cheon;Kim, Sung-Eun;Kim, Zee-Won;Yu, Yun-Sik
    • Transactions on Electrical and Electronic Materials
    • /
    • 제10권4호
    • /
    • pp.135-139
    • /
    • 2009
  • $H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.

Fabrication, Structure and Gas Sensing Properties of Pt-functionalized ZnS Nanowires

  • Kim, Soohyun;Park, Sunghoon;Jung, Jihwan;Lee, Chongmu
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
    • /
    • pp.315.2-315.2
    • /
    • 2014
  • Pt-functionalized ZnS nanowires were synthesized on Au-deposited c-plane sapphire substrates by thermal evaporation of ZnS powders followed by wet Pt coating and annealing. The $NO_2$ gas sensing properties of multiple-networked Pt-functionalized ZnS nanowire sensors were examined. Scanning electron microscopy showed the nanowires with diameters of 20-80 nm. Transmission electron microscopy and X-ray diffraction showed that the nanowires were wurtzite-structured ZnS single crystals. The Pt-functionalized ZnS nanowire sensors showed enhanced sensing performance to $NO_2$ gas at $150^{\circ}C$ compared to pristine ZnS nanowire sensors. Pristine and Pt-functionalized ZnS nanowire sensors showed responses of 140-211% and 207-488%, respectively, to 1-5 ppm $NO_2$, which are better than or comparable to those of many oxide semiconductor sensors. In addition, the underlying mechanism of the enhancement of the sensing properties of ZnS nanowires by Pt functionalization is discussed.

  • PDF