1 |
M. R. Werner and W. R. Fahrner, 'Review on material microsensors, system, and devices for hightemperature and harsh environment applications', IEEE Trans. on Indus. Electro., vol. 48, pp. 249257, 2001
DOI
ScienceOn
|
2 |
P. M. Sarro, 'Silicon carbide as a new MEMS technology', Sen. & Actuators A, vol. 82, pp. 210-218, 2000
DOI
ScienceOn
|
3 |
G. S. Chung, K. S. Kim, and J. H. Jeong, 'Growth of polycrystalline 3C-SiC thin films for MlNEMS applications by CVD', J of the Korean Sensors Soc., vol. 16, no. 2, pp. 85-90, 2007
과학기술학회마을
DOI
|
4 |
N. Norfell, S. Nishino, J. W. Yang, C. Jacob, and P. Pirouz, 'Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient', Appl. Phys. Lett., vol. 64, pp. 1647-1649, 1994
DOI
ScienceOn
|
5 |
S. Nishino, J. A. powell, and H. A. Will, 'Production of large-area single-crystal wafers of cubic SiC for semiconductor devices', Appl. Phys. Lett., vol. 42, pp. 460-467, 1983
DOI
|
6 |
G kotzar, M. Freas, P. Abel, A. Fleischman, S. Roy, C. Zorman, J. M. Moran, and J. Melzak, 'Evaluation of MEMS materials of construction for implantable medical devices', Bio Materials, vol. 23, pp. 2727-2750, 2002
|
7 |
J. A. Powell and L. G. Matus, 'Recent developments in SiC', in Proc. 1st Int. Conf. Amorphous and crystalline Silicon Carbide and Related Materials, West Germany, pp. 2-12. 1989
|
8 |
J. A. Powell, neudeck, L. G. Matus, and J. B. Petit, 'Progress in silicon carbide semiconductor technology', in Materials. Res. Soc. Symp. Proc., vol. 242, pp. 495-505, 1992
|
9 |
D. Gao, B. J. Wijesundara, C. Carraro, R. T. Howe, and R. Mabudian, 'Recent progress toward manufacturable polycrystalline SiC surface micromachining technology', IEEE Sensors J, vol. 4, pp. 441448, 2004
DOI
ScienceOn
|
10 |
G. S. Chung, K. S. Kim, and K. B. Han, 'Growth of ploycrystalline 3C-SiC thin films using HMDS single precursor', KIEEME, vol. 20, no. 2, pp. 155-161, 2007
과학기술학회마을
DOI
ScienceOn
|
11 |
W. C. Oliver and G. M. Pharr, 'An improved tech nique for determining hardness and elastic modulus using load and displacement sensing indentation experiments', J of Materials Research, vol. 7, pp. 1564-1583, 1992
DOI
|
12 |
X. M. H. Huang, 'Ultrahigh and microwave frequency nanomechanical system', Ph. D. Thesis, California Institute of Technology, pp. 30-37, 2004
|
13 |
K. M. Jackson, 'Fracture strength, elastic modulus and poisson's ration of polcrystalline 3C-SiC thinfilm silicon carbide found by microsample tensile testing', Sen. & Actuators A, vol. 125, pp. 34-40, 2005
DOI
ScienceOn
|