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http://dx.doi.org/10.4313/TEEM.2009.10.4.135

H2S Gas Sensing Properties of SnO2:CuO Thin Film Sensors Prepared by E-beam Evaporation  

Sohn, Jae-Cheon (Convergence of IT Devices Institute Busan, Dong-Eui University)
Kim, Sung-Eun (Convergence of IT Devices Institute Busan, Dong-Eui University)
Kim, Zee-Won (Convergence of IT Devices Institute Busan, Dong-Eui University)
Yu, Yun-Sik (Convergence of IT Devices Institute Busan, Dong-Eui University)
Publication Information
Transactions on Electrical and Electronic Materials / v.10, no.4, 2009 , pp. 135-139 More about this Journal
Abstract
$H_2S$ micro-gas sensors have been developed employing $SnO_2$:CuO composite thin films. The films were prepared by e-beam evaporation of Sn and Cu metals on silicon substrates, followed by oxidation at high temperatures. Results of various studies, such as scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that $SnO_2$ and CuO are mutually non-reactive. The CuO grains, which in turn reside in the inter-granular regions of $SnO_2$, inhibit grain growth of $SnO_2$ as well as forming a network of p-n junctions. The film showed more than a 90% relative resistance change when exposed to $H_2S$ gas at 1 ppm in air at an operating temperature of $350^{\circ}C$ and had a short response time of 8 sec.
Keywords
Gas sensor; Micromachining; Hydrogen sulphide ($H_2S$); Tin oxide ($SnO_2$);
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