• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.41-44
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• 2000

Ultra large scale integrated circuit(ULSI) & complementary metal oxide semiconductor(CMOS) circuits require gate electrode materials such as meta] silicides, titanium-silicide for gate oxides. Many previous authors have researched the improvements sub-micron gate oxide quality. However, little has been done on the electrical quality and reliability of ultra thin gates. In this research, we recommend novel shallow trench isolation structure and two step TiSi$_{2}$ formation for sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.287.2-287.2
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• 2013

We synthesized a new composite of poly sodium 4-styrenesulfonate intercalated graphene oxide for energy storage devices by controlling oxidation time in the synthesis of graphite oxide. Specific capacitance was improved from 20 F/g of the previous composites to 88 F/g of the new composite at the current density of 0.3 A/g. The capacitance retention was 94% after 3000 cycles, indicating that the new composites of high cyclic stability, prominent performance as electric double layer capacitor, and even low resistance could be an excellent carbon based electrode for further energy storage devices.

• Carbon letters
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• 제26권
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• pp.88-94
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• 2018

This manuscript explains the effective determination of urea by redox cyclic voltammetric analysis, for which a modified polypyrrole-graphene oxide (PPY-GO, GO 20% w/w of PPY) nanocomposite electrode was developed. Cyclic voltammetry measurements revealed an effective electron transfer in 0.1 M KOH electrolytic solution in the potential window range of 0 to 0.6 V. This PPY-GO modified electrode exhibited a moderate electrocatalytic effect towards urea oxidation, thereby allowing its determination in an electrolytic solution. The linear dependence of the current vs. urea concentration was reached using square-wave voltammetry in the concentration range of urea between 0.5 to $3.0{\mu}M$ with a relatively low limit of detection of $0.27{\mu}M$. The scanning electron microscopy was used to characterize the morphologies and properties of the nanocomposite layer, along with Fourier transform infrared spectroscopy. The results indicated that the nanocomposite film modified electrode exhibited a synergistic effect, including high conductivity, a fast electron-transfer rate, and an inherent catalytic ability.

• 공업화학
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• 제17권4호
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• pp.343-348
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• 2006

본 연구는 전기분해반응과 이온교환반응이 결합된 하이브리드 공정을 통하여 반도체 부품제조 시 발생하는 도금세정폐수 중에 함유되어 있는 시안을 분해시키고 은, 구리 등의 유가금속은 음극에 석출하고자 하였다. 역세공정 후에도 탈착되지 않은 이온들은 다음과 같은 전해조건으로 강염기성 음이온교환수지로부터 은을 회수하였다. Amberlite IRA 400 (산화전극 1.15 V, 알루미늄전극 1.3 V)과 Amberlite IRA 402 (산화전극 1.10 V, 알루미늄전극 1.2 V)에서의 실험결과 10~30 min 동안에 90~95%의 Ag을 회수할 수 있었다.

• 한국응용과학기술학회지
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• 제26권4호
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• pp.400-406
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• 2009

We investigated the electrochemical properties for Langmuir-Blodgett (LB) films of functionalized polyimide. LB films of polyimide monolayer were deposited by the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by cyclic voltammetry with a three-electrode system(an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode) at various concentrations(0.5, 1.0, and 1.5 N) of $NaClO_4$ solution. The current of reduction and oxidation range was measured from 1650 mV to -1350 mV, continuously. The scan rates were 50, 100 and 150 mV/s, respectively. As a result, monolayer and multilayer LB films of polyimide are appeared on irreversible process caused by the oxidation current from the cyclic voltammogram.

• Transactions on Electrical and Electronic Materials
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• 제3권1호
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• pp.4-8
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• 2002

The typical mold method for FED (field emission display) fabrication is used to form a gate electrode, a gate oxide layer, and emitter tip after fabrication of a mold shape using wet-etching of Si substrate. However, in this study, new mold method using a side wall space structure was developed to make sharp emitter tips with the gate electrode. In new method, gate oxide layer and gate electrode layer were deposited on a Si wafer by LPCVD (low pressure chemical vapor deposition), and then BPSG (Boro phosphor silicate glass) thin film was deposited. After then, the BPSG thin film was flowed into the mold at high temperature in order to form a sharp mold structure. TiN was deposited as an emitter tip on it. The unfinished device was bonded to a glass substrate by anodic bonding techniques. The Si wafer was etched from backside by KOH-deionized water solution. Finally, the sharp field emitter array with gate electrode on the glass substrate was formed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.461-462
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• 2005

In order to improve the efficiency of dye-sensitized solar cell (DSC), $TiO_2$ electrode screen-printed on transparent conducting oxide (TCO) substrate was sintered in variation with different temperature(350 to $550^{\circ}C$). $TiO_2$ electrode on fluorine doped tin oxide (FTO) glass was assembled with Pt counter electrode on FTO glass. I-V properties of DSC were measured under solar simulator. Also, effect of sintering temperature on surface morphology of $TiO_2$ films was investigated to understand correlation between its surface morphology and sintering temperature. Such surface morphology was observed by atomic force microscopy (AFM). From the measurement results, at sintering temperature of $500^{\circ}C$, both efficiency and fill factor of DSC were mutually complementary, enhancing highest fill factor and efficiency. Consequently, it was considered that optimum sintering temperature of $\alpha$-terpinol included $TiO_2$ paste is at $500^{\circ}C$.

• 한국재료학회지
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• 제1권4호
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• pp.229-235
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• 1991

$Ta_2O_5$ 박막은 실리콘산화막, 실리콘질화막 박막에 비해 유전율은 높으나 누설전류밀도가 높고, 절연파괴강도가 낮아 DRAM의 커패시터용 재료로서 실용화가 되지 못하고 있다. 본 연구에서는 LPCVD법으로 형성시킨 $300{\AA}$ 두께의 $Ta_2O_5$ 유전체박막에 대해 후속열처리 또는 전극재료를 변화시켜 열악한 전기적 특성의 원인을 규명하고자 하였다. 그 결과 다결정 실리콘 전극의 경우 성막상태의 $Ta_2O_5$ 박막은 전극에 의한 환원반응에 의해 전기적 특성이 열화됨을 알 수 있었고, 이를 TiN 전극의 사용으로 억제시킬 수 있었다. 다결정 실리콘 전극의 경우 성막상태의 $Ta_2O_5$ 유전체는 누설정류밀도가 $10^{-1}A/cm^2$, 절연파괴강도가 1.5MV/cm 정도였으며, $800^{\circ}C$에서 $O_2$열처리를 하면 전기적 특성은 개선되나, 유전율이 낮아진다 TiN 전극을 채용할 경우 누설전류밀도 $10^{-6}~10^{-7}A/cm^2$, 절연파괴강도 7~12MV/cm 로 ONO(Oxide-Nitride-Oxide) 박막과 비슷한 $Ta_2O_5$ 고유전막을 얻을 수 있었다.

• 한국표면공학회지
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• 제56권6호
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• pp.412-419
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• 2023

Anion exchange membrane electrolysis is considered a promising next-generation hydrogen production technology that can produce low-cost, clean hydrogen. However, anion exchange membrane electrolysis technology is in its early stages of development and requires intensive research on electrodes, which are a key component of the catalyst-system interface. In this study, we optimized the pressure conditions of the hot-pressing process to manufacture cobalt oxide electrodes for the development of a high uniformity and high adhesion electrode production process for the oxygen evolution reaction. As the pressure increased, the reduction of pores within the electrode and increased densification of catalytic particles led to the formation of a uniform electrode surface. The cobalt oxide electrode optimized for pressure conditions exhibited improved catalytic activity and durability. The optimized electrode was used as the anode in an AEMWE single cell, exhibiting a current density of 1.53 A cm^-2 at a cell voltage of 1.85 V. In a durability test conducted for 100 h at a constant current density of 500 mA cm^-2, it demonstrated excellent durability with a low degradation rate of 15.9 mV kh^-1, maintaining 99% of its initial performance.