• KSBB Journal
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• v.24 no.3
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• pp.239-245
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• 2009

Enantiopure styrene oxide derivatives are versatile building blocks for the synthesis of enantiopure pharmaceuticals. Styrene monooxygenase (SMO) catalyzes an asymmetric addition of an oxygen atom into a double bond of vinylaromatic compounds. SMO is a commercially potential biocatalyst to synthesize a variety of enantiopure epoxides with high enantiopurity and recovery yield. In this paper development of SMO biocatalyst and commercial feasibility of SMO-catalyzed asymmetric synthesis of enantiopure stylers oxide derivatives are reviewed.

• Journal of Electrochemical Science and Technology
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• v.6 no.1
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• pp.16-25
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• 2015

Transition metal oxide nanocrystalline materials are playing major role in energy storage application in this scenario. Nickel oxide is one of the best antiferromagnetic materials which is used as electrodes in energy storage devices such as, fuel cells, batteries, electrochemical capacitors, etc. In this research work, nickel oxide nanoparticles were synthesized by combustion route in presence of organic fuels such as, glycine, glucose and and urea. The prepared nickel oxide nanoparticles were calcined at 600℃ for 3 h to get phase pure materials. The calcined nanoparticles were preliminarily characterized by XRD, particle size analysis, SEM and EDAX. To prepare nickel oxide electrode materials for application in supercapacitors, the calcined NiO nanoparticles were mixed with di-methyl-acetamide and few drops of nafion solution for 12 to 16 h. The above slurry was coated in the graphite sheet and dried at 50℃ for 2 to 4 h in a hot air oven to remove organic solvent. The dried sample was subjected to electrochemical studies, such as cyclic voltammetry, AC impedance analysis and chrono-coulometry studies in KOH electrolyte medium. From the above studies, it was found that nickel oxide nanoparticles prepared by combustion synthesis using glucose as a fuel exhibited resulted in low particle diameter (42.23 nm). All the nickel oxide electrodes have shown better good capacitance values suitable for electrochemical capacitor applications.

• Carbon letters
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• v.16 no.2
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• pp.116-120
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• 2015

We investigated the adsorption of Na on graphene and graphene oxide, which are used as anode materials in sodium ion batteries, using density functional theory. The adsorption energy for Na on graphene was -0.507 eV at the hollow sites, implying that adsorption was favorable. In the case of graphene oxide, Na atoms were separately adsorbed on the epoxide and hydroxyl functional groups. The adsorption of Na on graphene oxide-epoxide (adsorption energy of -1.024 eV) was found to be stronger than the adsorption of Na on pristine graphene. However, the adsorption of Na on graphene oxide-hydroxyl resulted in the generation of NaOH as a by-product. Using density of states (DOS) calculations, we found that the DOS of the Na-adsorbed graphene was shifted down more than that of the Na-adsorbed graphene oxide-epoxide. In addition, the intensity of the DOS around the Fermi level for the Na-adsorbed graphene was higher than that for the Na-adsorbed graphene oxide-epoxide.

• Journal of the Korean Society of Propulsion Engineers
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• v.22 no.3
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• pp.65-71
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• 2018

There is no significant difference in the initial viscosity of a propellant applied with yellow iron oxide and red iron oxide. In addition, the thermal decomposition rate of the material with added yellow iron oxide is faster than that with the addition of red iron oxide. Specifically, it was confirmed that the pressure exponent was 18% lower at high temperature and high pressure with yellow iron oxide than with red iron oxide. The initial viscosity was lowest at 71% of the large particle to small particle ratio.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.495-498
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• 2018

Intermetallic compound matrix composites have been expected to be established as high temperature structural components. $Ni_3Al$ is a representative intermetallic alloy, which has excellent ductility even at room temperature by adding certain alloying elements. $Ni_3Al$ matrix composites with aluminum oxide particles, which are formed by the in-situ reaction between the alloy and aluminum borate whiskers, are fabricated by a powder metallurgical method. The addition of aluminum borate whiskers disperses the synthetic aluminum oxide particles during sintering and dramatically increases the strength of the composite. The uniform dispersion of reaction synthesized aluminum oxide particles and the uniform solution of boron in the matrix seem to play an important role in the improvement in strength. There is a dramatic increase in strength with the addition of the whisker, and the maximum value is obtained at a 10 vol% addition of whisker. The $Ni_3Al$ composite with 10 vol% aluminum oxide particles $0.3{\mu}m$ in size and with 0.1 wt% boron powder fabricated by the conventional powder metallurgical process does not have such high strength because of inhomogeneous distribution of aluminum oxide particles and of boron. The tensile strength of the $Ni_3Al$ with a 10 vol% aluminum borate whisker reaches more than twice the value, 930 MPa, of the parent alloy. No third phase is observed between the aluminum oxide and the matrix.

• Carbon letters
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• v.16 no.1
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• pp.41-44
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• 2015

We report the preparation of sulfonated reduced graphene oxide (SRGO) by the sulfonation of graphene oxide followed by radiation-induced chemical reduction. Graphene oxide prepared by the well-known modified Hummer's method was sulfonated with the aryl diazonium salt of sulfanilic acid. Sulfonated graphene oxide (SGO) dispersed in ethanol was subsequently reduced by ${\gamma}$-ray irradiation at various absorbed doses to produce SRGO. The results of optical, chemical, and thermal analyses revealed that SRGO was successfully prepared by ${\gamma}$-ray irradiation-induced chemical reduction of the SGO suspension. Moreover, the electrical conductivity of SRGO was increased up to 2.94 S/cm with an increase of the absorbed dose.

• Carbon letters
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• v.13 no.1
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• pp.39-43
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• 2012

The size and the physical properties of graphene oxide sheets were controlled by changing the oxidation temperature of graphite. Graphite oxide (GO) samples were prepared at different oxidation temperatures of $20^{\circ}C$, $27^{\circ}C$ and $35^{\circ}C$ using a modified Hummers' method. The carbon-to-oxygen (C/O) ratio and the average size of the GO sheets varied according to the oxidation temperature: 1.26 and 12.4 ${\mu}m$ at $20^{\circ}C$, 1.24 and 10.5 ${\mu}m$ at $27^{\circ}C$, and 1.18 and 8.5 ${\mu}m$ at $35^{\circ}C$. This indicates that the C/O ratio and the average size of the graphene oxide sheets respectively increase as the oxidation temperature decreases. Moreover, it was observed that the surface charge and optical properties of the graphene oxide sheets could be tuned by changing the temperature. This study demonstrates the tunability of the physical properties of graphene oxide sheets and shows that the properties depend on the functional groups generated during the oxidation process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.634-637
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• 1999

The amorphous vanadium oxide as a cathode material is very preferable for fabricating high performance micro-battery. The amorphous vanadium oxide cathode is preferred over the crystalline form because three times more lithium ions can be inserted into the amorphous cathode, thus making a battery that has a higher capacity. The electrochemical properties of sputtered films are strongly dependent on the oxygen partial pressure in the sputtering gas. The effect of different oxygen partial pressure on the electrochemical properties of vanadium oxide thin films formed by r.f. reactive sputtering deposition were investigated. The stoichiometry of the as-deposited films were investigated by Auger electro spectroscopy. X-ray diffraction and atomic force microscopy measurements were carried out to investigate structural properties and surface morphology, respectively. For high oxygen partial pressure(>30% ), the films were polycrystalline V$_2$O$_{5}$ while an amorphous vanadium oxide was obtained at the lower oxygen partial pressure(< 15%). Half-cell tests were conducted to investigate the electrochemical properties of the vanadium oxide film cathode. The cell capacity was about 60 $\mu$ Ah/$\textrm{cm}^2$ m after 200 cycle when oxygen partial pressure was 20%. These results suggested that the capacity of the thin film battery based on vanadium oxide cathode was strongly depends on crystallinity.y.

• Journal of Electrical Engineering and Technology
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• v.6 no.5
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• The KIPS Transactions:PartA
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• v.15A no.4
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• pp.211-216
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• 2008

In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.