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http://dx.doi.org/10.3745/KIPSTA.2008.15-A.4.211

A Study on Characteristics of Wet Oxide Gate and Nitride Oxide Gate for Fabrication of NMOSFET  

Kim, Hwan-Seog (강릉대학교 전기정보통신공학부)
Yi, Cheon-Hee (청주대학교 전자공학과)
Publication Information
The KIPS Transactions:PartA / v.15A, no.4, 2008 , pp. 211-216 More about this Journal
Abstract
In this paper we fabricated and measured the $0.26{\mu}m$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.
Keywords
Hot Carrier;
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