• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.324-331
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• 1995

The leakage current characteristics of the low temperature processed LDD structure poly-Si TFT is analyzed. The excimer laser technology was applied to the recrystallization process of poly-Si film and the maximum processing temperature was retained under 600.deg.C. From the fabricated LDD space 0.3.mu.m to 3$\mu$m, the best on/off current ration could be obtained with the 1.3$\mu$m LDD space. And the threshold voltage did not increase more than 4V over 0.8$\mu$m LDD space. The characteristics of leakage current was compared to non-LDD structure TFT to analyze the mechanism of leakage current. Consequently, it could be concluded that the leakage current is strongly affected by the trap states as well as high electric field between gate and drain.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.546-550
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• 2013

We propose a novel negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) by combining pn junction diode with depletion mode nanowire (NW) transistor, which suppress the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) Esaki diode with degenerately doped pn junction can provide multiple switching behavior having multi-peak and valley currents. These multiple NDR characteristics can be controlled by doping concentration of tunnel diode and threshold voltage of NW transistor. By designing our NDR device, PVCR can be over $10^4$ at low operation voltage of 0.5 V in a single peak and valley current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.365-370
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• 2000

Schottky contacts on n-In$\_$0.53//Ga$\_$0.47//As have been made by metal deposition on substrates cooled to a temperature of 77K. The current-voltage and capacitance-voltage characteristics showed that the Schottky diodes formed at low temperature had a much improved barrier height compared to those formed at room temperature. The Schottky barrier height ø$\_$B/ was found to be increased from 0.2eV to 0.6eV with Ag metal. The saturation current density of the low temperature diode was about 4 orders smaller than for the room temperature diode. A current transport mechanism dominated by thermionic emission over the barrier for the low temperature diode was found from current-voltage-temperature measurement. Deep level transient spectroscopy studies exhibited a bulk electron trap at E$\_$c/-0.23eV. The low temperature process appears to reduce metal induced surface damage and may form an MIS (metal-insulator-semiconductor)-like structure at the interface.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.43-53
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• 2007

We have analyzed low current operation characteristics of a VCSEL transmitter operating at fixed Current over wide temperature range. Used 850 nm oxide VCSEL has low temperature dependence of the threshold current and $d^2I_{th}/dT^2$ is approximately $1.346\times10^{-4}mA/^{\circ}C^2$. We fixed on-current so that output power from the chip is 1 mW at $20^{\circ}C$ and investigated the turn-on, turn-off characteristics and eye-diagram of the 850 nm oxide VCSEL transmitter with varying ambient temperature and off-current. We measured rise time, fall time, extinction ratio and timing jitter by changing tile ambient temperature and off-current. With the fixed off-current of around $0.1\sim0.2mA$ lower than the lowest threshold current the transmitter successfully operated at 1.25 Gbps over a wide temperature range from $-20^{\circ}C$ to $80^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.11
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• pp.1752-1757
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• 2012

With the development in industry, power demand has increased rapidly. As consumption of power has increased, Demand for new power line and electric capacity has risen. However, in the event of fault, problems occur in extending the range of fault coverage and increasing fault current. In these reasons, protection devise is recognized as the prevention of an accident and fault current. This paper dealt with minimizing fault propagation and limiting fault current by adjusting fault current limiter (FCL) with fast interrupter. At this point, we compared and analyzed characteristics between non-inductive resistance and fault current which is limited by superconducting units. In normal state of the power system, power was supplied to the load, but when fault occurred, the interrupter was operated as CT which detected the over-current. Its operation made the limitation of fault current through a FCL. We concluded that the limiter using superconducting units was more efficient with the increase of power voltage. Superconducting fault current limiter with the fast interrupter prevented the spread of a fault, and improved reliability of power system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.26 no.11
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• pp.75-80
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• 2012

In this paper, the operational characteristics due to the introduction of the superconducting fault current limiter(SFCL) with a peak current limiting function were analyzed in the power distribution system. The parallel structure of the superconducting element can operate the peak current limiting function depending on the transient amplitude of fault current. We studied the operating characteristics of the introduction of the SFCL with a peak current limiting function in the power distribution system. Furthermore, we were analyzed between the SFCL with a peak current limiting function and the protection devices in the power distribution system, through the short circuit experiments.

• Progress in Superconductivity
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• v.6 no.2
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• pp.138-141
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• 2005

Bi-2223/Ag tapes need to be safe, even it is under the over-critical current state for the protection of a superconducting power machine. However, it is not easy to identify the condition for the safe operation because of their broad S/N transition region. In this paper, for the study of the operation condition of Bi-2223/ Ag tapes, we investigated the V-I curves and the temperature variation of Bi-2223/ Ag tapes experimentally, applying alternating over-currents, and analyzed the relationship between resistance and temperature increase. For the experiments, a Bi-2223/Ag tape of 57 A $I_c$ was prepared, and the over-critical current characteristics under adiabatic state from $LN_2$ was measured. From the experiments, we confirmed that the Joule heating predicted by V-I curve corresponded with the increase of the measured temperature exactly. Using the results, a safe operation condition of Bi-2223 tape was discussed.

• Journal of Power Electronics
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• v.19 no.6
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• pp.1467-1476
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• 2019

Grid unbalanced faults can cause core saturation of power transformer and produce lower-order harmonics. These issues increase the electrical stress of power electronic devices and can cause a tripping of an entire HVDC system. In this paper, based on the positive-sequence and negative-sequence impedance model of a VSC-HVDC system as seen from the point of common connection (PCC), the resonance problem is analyzed and the factors determining the resonant frequency are obtained. Furthermore, to suppress over-voltage and over-current during resonance, a novel method using a virtual harmonic resistor is proposed. The virtual harmonic resistor emulates the role of a resistor connected in series with the commutating inductor without influencing the active and reactive power control. Simulation results in PSCAD/EMTDC show that the proposed control strategy can suppress resonant over-voltage and over-current. In addition, it can be seen that the proposed strategy improves the safety of the VSC-HVDC system under unbalanced faults.

• Proceedings of the Korea Institute of Fire Science and Engineering Conference
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• 2003.10a
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• pp.105-111
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• 2003