• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.665-672
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• 2000

The ferroelectric YMnO3 thin films were prepared by MOD(metal-organic decomposition) method with Y- and Mn-acetylacetonate as starting materials. Thin films were grown on various substrates by spin-coating technique. The crystalline phases of the thin films were identified by X-ray diffractometer as a function of heat-treatment temperature, pH of coating solution and substrate. In addition, the effect of Mn/Y molar ratio(0.8~1.2) on the formation of hexagonal-YMnO3 phase was investigated. In forming highly c-axisoriented hexagonal-YMnO3 single phase, the Pt coated Si substrate was more effective than the bare Si substrate, and the optimum heat-treatment condition was at 82$0^{\circ}C$ for 30 min. Higher Mn/Y molar ratio within 0.8~1.2 and pH of YMnO3 precursor solution within 0.5~2.5 favored formation of ferroelectric hexagonal phase rather than orthorhombic phase. Leakage current density of the hexagonal-YMnO3 thin film formed on Pt(111)/TiO2/SiO2/Si substrate was low enough as 0.4~4.0$\times$10-8(A/$\textrm{cm}^2$) at 5 V and its remanent polarization(Pr), calculated from the P-E hysteresis loop, was 3 nC/$\textrm{cm}^2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.31 no.4
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• pp.149-153
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• 2021

ε-Ga₂O₃ thin films were grown on 4H-SiC substrates by metal organic chemical vapor deposition (MOCVD) and crystalline quality were evaluated depend on growth conditions. It was found that the best conditions of the ε-Ga₂O₃ were grown at a growth temperature of 665℃ and an oxygen flow rate of 200 sccm. Two-dimensional growth was completed after the merge of hexagonal nuclei, and the arrangement direction of hexagonal nuclei was closely related to the crystal direction of the substrate. However, it was confirmed that crystal structure of the ε-Ga₂O₃ had an orthorhombic rather than hexagonal. Crystal phase transformation was performed by thermal treatment. And a β-Ga₂O₃ thin film was grown directly on 4H-SiC for the comparison to the phase transformed β-Ga₂O₃ thin film. The phase transformed β-Ga₂O₃ film showed better crystal quality than directly grown one.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.10
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• pp.906-910
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• 2008

$(K_{0.5}Na_{0.5})NbO_3$ (NKN) ceramics doped with $Li_{2}CO_3$ as sintering aids were manufactured in order to develop the low temperature sintering ceramics for piezoelectric device. The sintering aids were proved to lower the sintering temperature of doped NKN ceramics due to the effect of $Na_{2}CO_{3}-Li_{2}CO_3$ liquid phase. All the specimens showed the orthorhombic phase without secondary phase. And also, the piezoelectric properties of specimens were improved with increasing $Li_{2}CO_3$ contents. At sintering temperature of $930^{\circ}C$, the density, electromechanical coupling factor (kp), mechanical quality factor (Qm) and dielectric constant(${\epsilon}_{\gamma}$), piezoelectric constant of 0.3 wt.% $Li_{2}CO_3$ added specimen showed the optimum values of $4.255 g/cm^3$, 0.37, 234, 309, 136 pC/N, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.3
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• pp.47-53
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• 1991

In this study, the structural phase transition and decomposition of superconducting ceramic, Y-Ba-Cu-O system was studied. The results of the study are as follows. The high Tc superconductor $Y_2Ba_2Cu_3O_{7-x}$ is made in solid state reaction of $O_2$ atmosphere and the valve of X in $Y_2Ba_2Cu_3O_{7-x}$ is 0.1~0.2. The transition temperature of tetragonal-orthorhombic phase of $Y_2Ba_2Cu_3O_{7-x}$ appear at $790^{\circ}C-900^{\circ}C$. In the result of measuring the electrical resistance of sample annealed in $O_2$ atmosphere, the electrical resistance show zero at 92 K and the best superconductor, $Y_2Ba_2Cu_3O_{7-x}$(Y 123) can be mabe.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.408-414
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• 2021

This study analyzes the phase transition behavior and electrical properties of lead-free (1-x)K_0.5Na_0.5NbO₃-xBaZrO₃ (KNN-100xBZ) piezoelectric ceramics. The stabilized crystal structures in BaZrO₃-modified KNN ceramics is clarified to be pseudocubic. The polymorphic phase transition from the orthorhombic to pseudocubic phases can be observed with KNN-6BZ ceramics considering the optimized piezoelectric constant (d₃₃). Electromechanical strain behaviors are discussed. Accordingly, the enhancement of strain value at x = 0.08 (composition) may originate from the coexistence of ferroelectric domains and polar nanoregions. A schematic of domains for KNN, KNN-8BZ, and KNN-15BZ ceramics has been proposed to describe the relationship between the stabilized relaxor and changes in electrical properties.

• Journal of the Mineralogical Society of Korea
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• v.16 no.2
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• pp.161-169
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• 2003

A phase transformation study on a synthetic amorphous diopside, $(Ca,Mg)SiO_3$has been carried out up to ∼30 GPa, and ∼$1000^{\circ}C$ using a diamond anvil cell and YAG laser heating system, respectively. A starting amorphous material shows a direct transition to cubic $(Ca,Mg)SiO_3$perovskite at high pressure, which contradicts to the crystalline diopside phase transformation sequence disproportionating into mixtures of the orthorhombic$ MgSiO_3$perovskite and the cubic $CaSiO_3$perovskite phases. This discrepancy might be due to the different starting materials as well as the temperature variations at each specific experiment performed. The present phase transfor mation sequence would modify the mineralogical assemblage in the Earth transition region and the lower mantle depending upon the pressure, temperature and the oxygen partial pressure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.2
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• pp.68-72
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• 2002

The $\beta$-$FeSi_2$ and $\alpha$-$FeSi_2$ single crystals were synthesized by chemical vapour transport (CVT) using iodine as a transporting agent from the commercially available $FeSi_2$ powder. The $FeSi_2$ powder together with iodine were sealed in an evacuated quartz ampoule and the ampoule then being placed in two-zone electrical furnace for growing crystal. The CVT of $FeSi_2$ with iodine yielded $\beta$-$FeSi_2$ and $\alpha$-FeSi$_2$ single crystals at deposition temperature of 750 and $950^{\circ}C$ respectively. The source temperature was $1050^{\circ}C$ in both cases. The crystals of the $\alpha$-FeSi$_2$ phase were typically plate shaped with dimensions of about $10\times 10 \textrm{mm}^2$, whereas the crystals of orthorhombic $\beta$-$FeSi_2$ phase grew predominantly in the fonts of thin needle of about 10 mm in length. The composition of$\alpha$-FeSicrystal determined by electron probe microanalysis (EPMA) resulted in Si-rich $FeSi_{2.58}$ . 57. Furthermore, the CVT $\beta$-$FeSi_2$ crystal was found to be transformed to the high temperature $\alpha$-$FeSi_2$phase above $930^{\circ}C$.

• Korean Journal of Materials Research
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• v.4 no.3
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• pp.268-279
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• 1994

The x-ray powtler pattern of single phase $Bi_2S_2CaCu_2O_{8+x}$ has been identified and fullyindexed using a pseudotetragonal subcell with a= 5.408, c = 30.83 $\AA$ and an incommensurate supercellwith reciprocal lattice vector, X$q^*$, given by $q^*=0.211b^*-c^*$. The x -ray powder pattern of the Pb-free110K superconductor phase "$Bi_2S_2CaCu_2O_{10+x}$" has many lines which belong t.o an incommensuratesupercell. Using elect.ron d~ffraction pImt.ographs as a indexing guide, an indexing scheme for the powderpattern has been obtained. The unit cell has a geometrically orthorhombic subcell a=5.411, b= 5.420, c=37.29(2) $\AA$. Supercell reflections have indices that are derived from the subcell k, 1 indices by addition uf$\pm q^*$, where $\pm q^*=0.211b^*-0.78c^*$The incommensurate con~ponent In the b dwection, $\delta$, is the same for both phases but on going from2212 to 2223 phase, the superlattic component in the c direction changes from commensurate($\varepsilon$=1) toincommensurate($\varepsilon$=0.78).X>$\varepsilon$=0.78).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.3
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• pp.139-144
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• 2003

A flat type micro gas sensor was fabricated on the p-type silicon wafer with low stress Si$_3$N$_4$, whose thickness is 2 ${\mu}{\textrm}{m}$, using MEMS technology. WO$_3$ thin film as a sensing material for detection of NO$_2$ gas was deposited using a tungsten target by sputtering method, followed by thermal oxidation at several temperatures (40$0^{\circ}C$-$600^{\circ}C$) for one hour. NO$_2$ sensitivities were investigated for the WO$_3$ thin films with different annealing temperatures. The highest sensitivity was obtained for the samples annealed at $600^{\circ}C$ when it was operated at 20$0^{\circ}C$. The results of XRD analysis showed the annealed samples had polycrystalline phase mixed with triclinic and orthorhombic structures. The sample exhibits higher sensitivity when the system has less triclinic structure. The sensitivities, $R_{gas}/R_{air},$ operating at 20$0^{\circ}C$ to 5 ppm NO$_2$ of the sample annealed at $600^{\circ}C$ were approximately 90.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.119-122
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• 2002

The calculated and measured dielectric constant of (1-x)(Al$\sub$1/2/Ta$\sub$1/2/)O$_2$-x(Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$(O$\leq$x$\leq$1.0) solid solutions were investigated by variations of ionic polarizability and crystal structure. (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ and (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$were orthorhombic and tetragonal trirutile structure, respectively. When (Al$\sub$1/2/Ta$\sub$1/2/)O$_2$ was substituted by (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$, the phase transformed to tetragonal structure over 60 mole%. Because the ionic radius of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$was slightly bigger than one of (A1$\sub$1/2/Ta$\sub$1/2)O$_2$, the cell parameters increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution. The measured dielectric constant increased with an increase of (Mg$\sub$1/3/Ta$\sub$2/3/)O$_2$ substitution and coincided with dielectric mixing rule and the calculated dielectric constant with the molecular additivity rule. There were some differences between the measured and the calculated dielectric constant. The reason of the lowered dielectric constant comparing with the calculated one was compressed stress due to the electronic structure of tantalum.